Eugene A. Fitzgerald

  • Merton C. Flemings-SMA Professor of Materials Science and Engineering
  • CEO and director of the Singapore-MIT Alliance for Research and Technology
  • BS Materials Science and Engineering, MIT, 1985
  • PhD Materials Science and Engineering, Cornell, 1989

Electronic Materials; Nanotechnology; Semiconductors; Surfaces, Interfaces, and Thin Films

Eugene A. Fitzgerald

Research

Prof. Fitzgerald's group's research activities attack the current limitations of electronic materials, especially limitations created by imperfections in materials such as point, line, and planar defects. Much of the group's efforts are focused on lattice-mismatched semiconductor systems, in which layers in electronic materials and devices have different lattice parameters. Such material combinations have potential in printing, storage, display, communications, and interconnect applications. But the utility of these materials depends on our ability to understand and eliminate crystalline defects which can be generated due to the lattice-mismatch between semiconductor layers. Current projects involve the fabrication of GeSi/Si detectors and InGaAs/GaAs emitters which may be used in fiber-to-the-home applications; GeSi/Si structures for integrated, micro-mechanical devices; visible AlInGaP LEDs and lasers integrated on Si and GaAs; III-V microwave transistors integrated on Si; III-V solar cells integrated on Si; basic studies concerning the generation, propagation, and interaction of defects in these heterostructures; and investigations of microscopic failure mechanisms in optoelectronic and electronic devices.

Recent News

New solar cell is more efficient, costs less than its counterparts

Exposed in step-like formation, layers of new photovoltaic cell harvest more of sun’s energy.  The cost of solar power is beginning to reach price parity with cheaper fossil fuel-based electricity in many parts of the world, yet the clean energy source still accounts for just slightly…   more

Gene Fitzgerald Cornell Alum honor

The Cornell Department of Materials Science and Engineering has honored Gene Fitzgerald with the Distinguished Alumni Award for 2016, "in recognition of [his…   more

Research and Education Initiatives, 2015-16

Here's a quick video update on research and education initiatives from DMSE. Professor Chiang offers his perspective on energy research, Professor Gibson describes DMSE's online educational offerings, Professor Fitzgerald explains DMSE's international collaboration with universities in…   more

Rediscovering Fundamental Innovation

“People imagine that technology research is a linear process that moves from stage to stage, but we found that’s not really what happens,” says Fitzgerald. “It’s…   more

Publications

2018

X. Zhao, Heidelberger, C., Fitzgerald, E. A., Lu, W., Vardi, A., and del Alamo, J. A., “Sub-10-nm-Diameter InGaAs Vertical Nanowire MOSFETs: Ni Versus Mo Contacts”, IEEE Transactions on Electron Devices, vol. 65. pp. 3762-3768, 2018.
S. A. Fortuna, Heidelberger, C., Yablonovitch, E., Fitzgerald, E. A., and Wu, M. C., “Nanoscale III-V Light Emitting Diode with Antenna-Enhanced 250 Picosecond Spontaneous Emission Lifetime”, in 2018 IEEE International Semiconductor Laser Conference (ISLC), Santa Fe, NM, 2018, pp. 1-2.
Y. Wang et al., “Performance of AlGaInP LEDs on silicon substrates through low threading dislocation density (TDD) germanium buffer layer”, Semiconductor Science and Technology, vol. 33. p. 104004, 2018.
A. Kadir et al., “Influence of substrate nitridation on the threading dislocation density of GaN grown on 200 mm Si (111) substrate”, Thin Solid Films, vol. 663. pp. 73-78, 2018.
W. K. Loke, Lee, K. H., Wang, Y., Tan, C. S., Fitzgerald, E. A., and Yoon, S. F., “MOCVD growth of InGaP/GaAs heterojunction bipolar transistors on 200 mm Si wafers for heterogeneous integration with Si CMOS”, Semiconductor Science and Technology, vol. 33. p. 115011, 2018.
Y. Wang et al., “In $_\textrm0.49$ Ga $_\textrm0.51$ P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations”, AIP Advances, vol. 8. p. 115132, 2018.
L. Zhang et al., “Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding”, Japanese Journal of Applied Physics, vol. 57. p. 051002, 2018.
R. Jia, Zhu, T., Bulovic, V., and Fitzgerald, E. A., “Luminescence of III-IV-V thin film alloys grown by metalorganic chemical vapor deposition”, Journal of Applied Physics, vol. 123. p. 175101, 2018.
B. Liu, Mao, M., Boon, C. C., Choi, P., Khanna, D., and Fitzgerald, E. A., “A Fully Integrated Class-J GaN MMIC Power Amplifier for 5-GHz WLAN 802.11ax Application”, IEEE Microwave and Wireless Components Letters, vol. 28. pp. 434-436, 2018.
B. Liu, Mao, M., Khanna, D., Choi, P., Boon, C. C., and Fitzgerald, E. A., “A Highly Efficient Fully Integrated GaN Power Amplifier for 5-GHz WLAN 802.11ac Application”, IEEE Microwave and Wireless Components Letters, vol. 28. pp. 437-439, 2018.
C. -C. Huang, Liu, Z., Xing, W., Ng, G. I., Fitzgerald, E. A., and Chua, S. J., “The Sub-micron GaN HEMT Device on 200mm Si(111) Wafer with Low Wafer Bow”, in 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM), Kobe, 2018, pp. 257-259.
K. H. Lee, Wang, Y., Zhang, L., Chua, S. J., Fitzgerald, E. A., and Tan, C. S., “GaN LED on Quartz Substrate through Wafer Bonding and Layer Transfer Processes”, ECS Transactions, vol. 86. pp. 31-36, 2018.
E. A. Fitzgerald, “The New Silicon Industry: Silicon CMOS ASICs Incorporating Compound Semiconductors”, ECS Transactions, vol. 86. pp. 109-112, 2018.
K. H. Lee et al., “Monolithic Integration of Si-CMOS and III-V-on-Si through Direct Wafer Bonding Process”, ECS Transactions, vol. 86. pp. 177-184, 2018.
B. Liu, Mao, M., Khanna, D., Boon, C. -C., Choi, P., and Fitzgerald, E. A., “A Novel 2.6–6.4 GHz Highly Integrated Broadband GaN Power Amplifier”, IEEE Microwave and Wireless Components Letters, vol. 28. pp. 37-39, 2018.
K. H. Lee, Bao, S., Wang, Y., Fitzgerald, E. A., and Tan, C. S., “Suppression of interfacial voids formation during silane (SiH $_\textrm4$ )-based silicon oxide bonding with a thin silicon nitride capping layer”, Journal of Applied Physics, vol. 123. p. 015302, 2018.
S. A. Hadi, Fitzgerald, E. A., Griffiths, S., and Nayfeh, A., “III-V/Si dual junction solar cell at scale: Manufacturing cost estimates for step-cell based technology”, Journal of Renewable and Sustainable Energy, vol. 10. p. 015905, 2018.
C. Heidelberger and Fitzgerald, E. A., “GaAsP/InGaP HBTs grown epitaxially on Si substrates: Effect of dislocation density on DC current gain”, Journal of Applied Physics, vol. 123. p. 161532, 2018.
Y. Wang et al., “High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator”, Photonics Research, vol. 6. p. 290, 2018.
D. Nam et al., “Low-Threshold Lasing in Strained Germanium under Optical Pumping”, in Conference on Lasers and Electro-Optics, San Jose, California, 2018, p. STh4I.6.
K. H. Lee et al., “Monolithic Integration of Si-CMOS and III-V-on-Si Through Direct Wafer Bonding Process”, IEEE Journal of the Electron Devices Society, vol. 6. pp. 571-578, 2018.
D. Li et al., “Spectrum Splitting Micro-Concentrator Assembly for Laterally-arrayed Multi-Junction Photovoltaic Module”, in Conference on Lasers and Electro-Optics, San Jose, California, 2018, p. AW3O.3.

2017

P. Choi, Radhakrishna, U., Antoniadis, D., and Fitzgerald, E. A., “GaN device-circuit interaction on RF linear power amplifier designed using the MVSG compact model”, in 2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), Miami, FL, 2017, pp. 1-4.
S. A. Fortuna et al., “Large spontaneous emission rate enhancement in a nanoscale III-V LED coupled to an optical antenna”, in 2017 Fifth Berkeley Symposium on Energy Efficient Electronic Systems \& Steep Transistors Workshop (E3S), Berkeley, CA, 2017, pp. 1-3.
K. H. Lee et al., “Integration of Si-CMOS and III-V materials through multi-wafer stacking”, in 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Burlingame, CA, 2017, pp. 1-2.
S. Huberman et al., “Unifying first-principles theoretical predictions and experimental measurements of size effects in thermal transport in SiGe alloys”, Physical Review Materials, vol. 1. 2017.
D. Kohen et al., “Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers”, Journal of Crystal Growth, vol. 478. pp. 64-70, 2017.
K. H. Lee et al., “Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications”, Journal of Materials Research, vol. 32. pp. 4025-4040, 2017.
S. Bao et al., “Germanium-on-insulator virtual substrate for InGaP epitaxy”, Materials Science in Semiconductor Processing, vol. 70. pp. 17-23, 2017.
X. S. Nguyen et al., “MOCVD Growth of High Quality InGaAs HEMT Layers on Large Scale Si Wafers for Heterogeneous Integration With Si CMOS”, IEEE Transactions on Semiconductor Manufacturing, vol. 30. pp. 456-461, 2017.
X. Zhao, Heidelberger, C., Fitzgerald, E. A., and del Alamo, J. A., “Source/Drain Asymmetry in InGaAs Vertical Nanowire MOSFETs”, IEEE Transactions on Electron Devices, vol. 64. pp. 2161-2165, 2017.
K. H. Lee, Bao, S., Lee, K. E. K., Fitzgerald, E., and Tan, C. S., “Integration of 200 mm Si-CMOS and III-V materials through wafer bonding”, in 2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D), Tokyo, Japan, 2017, pp. 30-30.
R. Jia, Zeng, L., Chen, G., and Fitzgerald, E. A., “Thermal conductivity of GaAs/Ge nanostructures”, Applied Physics Letters, vol. 110. p. 222105, 2017.
L. Zhang et al., “MOCVD growth of GaN on SEMI-spec 200 mm Si”, Semiconductor Science and Technology, vol. 32. p. 065001, 2017.
P. Koert, Terry, D., Fitzgerald, E., and Wukitch, S., “Progress in the Development of a Double Stub Tuner for Alcator C-Mod Lower Hybrid Current Drive System”, Fusion Science and Technology. pp. 1-5, 2017.
C. Heidelberger and Fitzgerald, E. A., “GaAsP/InGaP heterojunction bipolar transistors grown by MOCVD”, Journal of Applied Physics, vol. 121. p. 045703, 2017.
S. Bao et al., “Germanium-on-insulator virtual substrate for InGaP epitaxy”, Materials Science in Semiconductor Processing, vol. 58. pp. 15-21, 2017.
B. Wang et al., “The integration of InGaP LEDs with CMOS on 200 mm silicon wafers”, San Francisco, California, United States, 2017, p. 101070Y.
B. Wang et al., “Control wafer bow of InGaP on 200 mm Si by strain engineering”, Semiconductor Science and Technology, vol. 32. p. 125013, 2017.
S. Yadav et al., “High mobility In0.30Ga0.70As MOSHEMTs on low threading dislocation density 200 mm Si substrates: A technology enabler towards heterogeneous integration of low noise and medium power amplifiers with Si CMOS”, in 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2017, pp. 1-17.
X. Zhao, Heidelberger, C., Fitzgerald, E. A., Lu, W., Vardi, A., and del Alamo, J. A., “Sub-10 nm diameter InGaAs vertical nanowire MOSFETs”, in 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2017, pp. 1-17.
Y. Kim et al., “Remote epitaxy through graphene enables two-dimensional material-based layer transfer”, Nature, vol. 544. pp. 340-343, 2017.
R. Jia, Zeng, L., Chen, G., and Fitzgerald, E. A., “Thermal conductivity of GaAs/Ge nanostructures”, Applied Physics Letters, vol. 110. p. 222105, 2017.
X. Zhao, Heidelberger, C., Fitzgerald, E. A., and del Alamo, J. A., “Source/Drain Asymmetry in InGaAs Vertical Nanowire MOSFETs”, Ieee Transactions on Electron Devices, vol. 64. pp. 2161-2165, 2017.
N. L. Yurong et al., “Performance of 1eV GaNAsSb-based photovoltaic cell on Si substrate at different growth temperatures”, Progress in Photovoltaics, vol. 25. pp. 327-332, 2017.
C. Heidelberger and Fitzgerald, E. A., “GaAsP/InGaP heterojunction bipolar transistors grown by MOCVD”, Journal of Applied Physics, vol. 121. p. 045703, 2017.
B. Wang et al., “The integration of InGaP LEDs with CMOS on 200 mm Silicon wafers”, in Smart Photonic and Optoelectronic Integrated Circuits Xix, vol. 10107, Bellingham: Spie-Int Soc Optical Engineering, 2017, p. UNSP - 101070Y.
S. Bao et al., “Single-Defect Hexapole Mode GeSn Photonic Crystal Laser: Fabrication and Simulation”, in Conference on Lasers and Electro-Optics, San Jose, California, 2017, p. JTu5A.110.

2016

D. Kohen et al., “Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer”, Aip Advances, vol. 6. p. 085106, 2016.
X. S. Nguyen et al., “Deep level traps in GaN LEDs grown by metal organic vapour phase epitaxy on an 8 inch Si(111) substrate”, Japanese Journal of Applied Physics, vol. 55. p. 060306, 2016.
B. Wang et al., “Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe”, Journal of Crystal Growth, vol. 441. pp. 78-83, 2016.
M. Vaisman, Mukherjee, K., Masuda, T., Yaung, K. N., Fitzgerald, E. A., and Lee, M. L., “Direct-Gap 2.1-2.2 eV AlInP Solar Cells on GaInAs/GaAs Metamorphic Buffers”, Ieee Journal of Photovoltaics, vol. 6. pp. 571-577, 2016.
K. E. Lee and Fitzgerald, E. A., “Metamorphic transistors: Building blocks for hetero-integrated circuits”, Mrs Bulletin, vol. 41. pp. 210-217, 2016.
S. A. Hadi, Fitzgerald, E. A., and Nayfeh, A., “Theoretical efficiency limit for a two-terminal multi-junction "step-cell" using detailed balance method”, Journal of Applied Physics, vol. 119. p. 073104, 2016.
R. Jia and Fitzgerald, E. A., “Parameters influencing interfacial morphology in GaAs/Ge superlattices grown by metal organic chemical vapor deposition”, Journal of Crystal Growth, vol. 435. pp. 50-55, 2016.
K. H. Lee et al., “Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer”, Aip Advances, vol. 6. p. 025028, 2016.
S. Yadav et al., “In0.30Ga0.70As QW MOSFETs with Peak Mobility exceeding 3000 cm(2)/V.s Fabricated on Si Substrates”, 2016 Ieee Silicon Nanoelectronics Workshop (snw). pp. 126-127, 2016.
S. A. Fortuna et al., “Optical Antenna Enhanced Spontaneous Emission Rate in Electrically Injected Nanoscale III-V LED”, in 2016 International Semiconductor Laser Conference (islc), New York: Ieee, 2016.
B. Wang et al., “Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates”, in Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting Xx, vol. 9768, Bellingham: Spie-Int Soc Optical Engineering, 2016, p. 97681J.
R. E. Brandt et al., “Temperature- and Intensity-Dependent Photovoltaic Measurements to Identify Dominant Recombination Pathways”, in 2016 Ieee 43rd Photovoltaic Specialists Conference (pvsc), New York: Ieee, 2016, pp. 1997-2001.
S. A. Hadi, Milakovich, T., Shah, R., Fitzgerald, E. A., and Nayfeh, A., “Towards Demonstration of GaAs0.76P0.24/ Si Dual Junction Step-Cell”, in 2016 Ieee 43rd Photovoltaic Specialists Conference (pvsc), New York: Ieee, 2016, pp. 1881-1886.

2015

R. M. Iutzi and Fitzgerald, E. A., “Conductance slope and curvature coefficient of InGaAs/GaAsSb heterojunctions at varying band alignments and its implication on digital and analog applications”, Journal of Applied Physics, vol. 118. p. 235702, 2015.
S. Saylan, Milakovich, T., Hadi, S. A., Nayfeh, A., Fitzgerald, E. A., and Dahlem, M. S., “Multilayer antireflection coating design for GaAs0.P-69(0.31)/Si dual-junction solar cells”, Solar Energy, vol. 122. pp. 76-86, 2015.
R. M. Iutzi and Fitzgerald, E. A., “Defect and temperature dependence of tunneling in InAs/GaSb heterojunctions”, Applied Physics Letters, vol. 107. p. 133504, 2015.
K. Mukherjee, Norman, A. G., Akey, A. J., Buonassisi, T., and Fitzgerald, E. A., “Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence”, Journal of Applied Physics, vol. 118. p. 115306, 2015.
D. Kohen et al., “The role of AsH3 partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD - Application to a 200 mm GaAs virtual substrate”, Journal of Crystal Growth, vol. 421. pp. 58-65, 2015.
R. S. Omampuliyur et al., “Nanostructured Thin Film Silicon Anodes for Li-Ion Microbatteries”, Journal of Nanoscience and Nanotechnology, vol. 15. pp. 4926-4933, 2015.
A. Kadir, Huang, C. C., Lee, K. E. K., Fitzgerald, E. A., and Chua, S. J., “Response to "Comment on \textquoterightDetermination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system\textquoteright" [Appl. Phys. Lett. 106, 176101 (2015)]”, Applied Physics Letters, vol. 106. p. 176102, 2015.
K. Mukherjee, Deotare, P. B., and Fitzgerald, E. A., “Improved photoluminescence characteristics of order-disorder AlGaInP quantum wells at room and elevated temperatures”, Applied Physics Letters, vol. 106. p. 142109, 2015.
X. S. Nguyen, Lin, K., Fitzgerald, E. A., and Chua, S. J., “Correlation of a generation-recombination center with a deep level trap in GaN”, Applied Physics Letters, vol. 106. p. 102101, 2015.
S. A. Hadi et al., “Design Optimization of Single-Layer Antireflective Coating for GaAs1-xPx/Si Tandem Cells With x=0, 0.17, 0.29, and 0.37”, Ieee Journal of Photovoltaics, vol. 5. pp. 425-431, 2015.
K. H. Lee, Bao, S., Chong, G. Y., Tan, Y. H., Fitzgerald, E. A., and Tan, C. S., “Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient”, APL Materials, vol. 3. p. 016102, 2015.
N. Y. Pacella, Bulsara, M. T., Drazek, C., Guiot, E., and Fitzgerald, E. A., “Fabrication and Thermal Budget Considerations of Advanced Ge and InP SOLES Substrates”, Ecs Journal of Solid State Science and Technology, vol. 4. pp. P258 - P264, 2015.
E. A. Fitzgerald, Langdo, T. A., McGovern, K. M., and Renjilian, R., Point-of-Drinking Water Purification Innovation: The Water Initiative. 2015.

2014

K. Mukherjee, Beaton, D. A., Mascarenhas, A., Bulsara, M. T., and Fitzgerald, E. A., “Effects of dislocation strain on the epitaxy of lattice-mismatched AlGaInP layers”, Journal of Crystal Growth, vol. 392. pp. 74-80, 2014.
K. H. Tan et al., “Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate”, Applied Physics Letters, vol. 104. 2014.

2013

Y. Y. Liang, Yoon, S. F., and Fitzgerald, E. A., “Kinetic Monte Carlo simulation of quantum dot growth on stepped substrates”, Journal of Physics D-Applied Physics, vol. 46. 2013.
D. A. Beaton, Christian, T., Alberi, K., Mascarenhas, A., Mukherjee, K., and Fitzgerald, E. A., “Determination of the direct to indirect bandgap transition composition in AlxIn1-xP”, Journal of Applied Physics, vol. 114. 2013.
F. Hofmann et al., “Intrinsic to extrinsic phonon lifetime transition in a GaAs-AlAs superlattice”, Journal of Physics-Condensed Matter, vol. 25. 2013.
K. Mukherjee et al., “Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates”, Journal of Applied Physics, vol. 113. 2013.
I. P. Seetoh, Soh, C. B., Fitzgerald, E. A., and Chua, S. J., “Auger recombination as the dominant recombination process in indium nitride at low temperatures during steady-state photoluminescence”, Applied Physics Letters, vol. 102. 2013.
C. Y. Yeo, Xu, D. W., Yoon, S. F., and Fitzgerald, E. A., “Low temperature direct wafer bonding of GaAs to Si via plasma activation”, Applied Physics Letters, vol. 102. 2013.

2012

Y. Y. Liang, Yoon, S. F., Ngo, C. Y., Loke, W. K., and Fitzgerald, E. A., “Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 mu m room-temperature emission”, Journal of Physics D-Applied Physics, vol. 45. 2012.
P. Sharma, Milakovich, T., Bulsara, M. T., and Fitzgerald, E. A., “Controlling Epitaxial GaAsxP1-x/Si1-yGey Heterovalent Interfaces”, Sige, Ge, and Related Compounds 5: Materials, Processing, and Devices, vol. 50. pp. 333-337, 2012.
Y. Y. Liang, Yoon, S. F., Ngo, C. Y., Loke, W. K., and Fitzgerald, E. A., “InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrates (GeOI) using molecular beam epitaxy”, Physica Status Solidi C: Current Topics in Solid State Physics, Vol 9, vol. 9. 2012.
E. A. Fitzgerald, “Materials Integration for III-V/SiGe plus CMOS Integrated Circuit Platforms”, Sige, Ge, and Related Compounds 5: Materials, Processing, and Devices, vol. 50. pp. 1033-1037, 2012.

2011

K. H. Tan et al., “Molecular beam epitaxy grown GaNAsSb 1 eV photovoltaic cell”, Journal of Crystal Growth, vol. 335. pp. 66-69, 2011.
X. Sheng et al., “Design and fabrication of high-index-contrast self-assembled texture for light extraction enhancement in LEDs”, Optics Express, vol. 19. pp. A701 - A709, 2011.
Y. Y. Liang et al., “Effects of growth parameters on the surface morphology of InAs quantum dots grown on GaAs/Ge/Si1-xGex/Si substrate”, Journal of Crystal Growth, vol. 323. pp. 426-430, 2011.
B. S. Ong, Pey, K. L., Ong, C. Y., Tan, C. S., Antoniadis, D. A., and Fitzgerald, E. A., “Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors”, Applied Physics Letters, vol. 98. 2011.
M. Gonzalez, Carlin, A. M., Dohrman, C. L., Fitzgerald, E. A., and Ringel, S. A., “Determination of bandgap states in p-type In0.49Ga0.51P grown on SiGe/Si and GaAs by deep level optical spectroscopy and deep level transient spectroscopy”, Journal of Applied Physics, vol. 109. 2011.
L. Yang, Cheng, C. W., Bulsara, M. T., and Fitzgerald, E. A., “Effect of Al2O3/InGaAs Interface on Channel Mobility”, Ulsi Process Integration 7, vol. 41. pp. 219-225, 2011.
E. A. Fitzgerald, Yang, L., and Cheng, C. -W., “III-V/Si Electronics”, Dielectrics in Nanosystems -and- Graphene, Ge/Iii-V, Nanowires and Emerging Materials for Post-Cmos Applications 3, vol. 35. pp. 345-349, 2011.
N. Y. Pacella, Bulsara, M. T., and Fitzgerald, E. A., “Si CMOS Contacts to III-V Materials for Monolithic Integration of III-V and Si Devices”, in Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications, vol. 35, 2011, pp. 225-229.

2010

X. Wang, Pey, K. L., Yip, C. H., Fitzgerald, E. A., and Antoniadis, D. A., “Vertically arrayed Si nanowire/nanorod-based core-shell p-n junction solar cells”, Journal of Applied Physics, vol. 108. 2010.
H. Q. Le et al., “Growth of single crystal ZnO nanorods on GaN using an aqueous solution method (Retraction of vol 87, 101908, 2005)”, Applied Physics Letters, vol. 97. 2010.
G. Mazzeo, Yablonovitch, E., Jiang, H. W., Bai, Y., and Fitzgerald, E. A., “Conduction band discontinuity and electron confinement at the SixGe1-x/Ge interface”, Applied Physics Letters, vol. 96. 2010.
W. E. Hoke et al., “Molecular beam epitaxial growth and properties of GaAs pseudomorphic high electron mobility transistors on silicon composite substrates”, Journal of Vacuum Science & Technology B, vol. 28. 2010.
M. J. Mori, Boles, S. T., and Fitzgerald, E. A., “Comparison of compressive and tensile relaxed composition-graded GaAsP and (Al)InGaP substrates”, Journal of Vacuum Science & Technology A, vol. 28. pp. 182-188, 2010.
Y. Bai and Fitzgerald, E. A., “Ge/III-V Heterostructures and Their Applications in Fabricating Engineered Substrates”, Sige, Ge, and Related Compounds 4: Materials, Processing, and Devices, vol. 33. pp. 927-932, 2010.
T. E. Kazior et al., “High Performance Mixed Signal Circuits Enabled by the Direct Monolithic Heterogeneous Integration of InP HBT and Si CMOS on a Silicon Substrate”, in 2010 Ieee Compound Semiconductor Integrated Circuit Symposium (csics), 2010.
P. Sharma, Bulsara, M. T., and Fitzgerald, E. A., “High Quality Epitaxial Growth of GaAsyP1-y Alloys on Si1-xGex Virtual Substrates”, Sige, Ge, and Related Compounds 4: Materials, Processing, and Devices, vol. 33. pp. 843-848, 2010.
B. S. Ong et al., “Effect of Using Chemical Vapor Deposition WSi2 and Postmetallization Annealing on GaAs Metal-Oxide-Semiconductor Capacitors”, Electrochemical and Solid State Letters, vol. 13. pp. II328 - II331, 2010.

2009

H. Tanoto et al., “Electroluminescence and structural characteristics of InAs/In0.1Ga0.9As quantum dots grown on graded Si1-xGex/Si substrate”, Applied Physics Letters, vol. 95. 2009.
S. T. Boles, Fitzgerald, E. A., Thompson, C. V., Ho, C. K. F., and Pey, K. L., “Catalyst proximity effects on the growth rate of Si nanowires”, Journal of Applied Physics, vol. 106. 2009.
H. Tanoto et al., “Origin and suppression of V-shaped defects in the capping of self-assembled InAs quantum dots on graded Si1-xGex/Si substrate”, Applied Physics Letters, vol. 95. 2009.
J. Liu et al., “Efficient above-band-gap light emission in germanium”, Chinese Optics Letters, vol. 7. pp. 271-273, 2009.
W. K. Liu et al., “Monolithic integration of InP-based transistors on Si substrates using MBE”, Journal of Crystal Growth, vol. 311. pp. 1979-1983, 2009.
S. T. Boles, Thompson, C. V., and Fitzgerald, E. A., “Influence of indium and phosphine on Au-catalyzed InP nanowire growth on Si substrates”, Journal of Crystal Growth, vol. 311. pp. 1446-1450, 2009.
K. P. Chen et al., “Study of surface microstructure origin and evolution for GaAs grown on Ge/Si1-xGex/Si substrate”, Journal of Physics D-Applied Physics, vol. 42. 2009.
H. G. Chew, Zheng, F., Choi, W. K., Dim, W. K., Fitzgerald, E. A., and Foo, Y. L., “Comparison of the Synthesis of Ge Nanocrystals in Hafnium Aluminum Oxide and Silicon Oxide Matrices”, Journal of Nanoscience and Nanotechnology, vol. 9. pp. 1577-1581, 2009.
M. J. Mori and Fitzgerald, E. A., “Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates”, Journal of Applied Physics, vol. 105. 2009.
T. E. Kazior et al., “Progress and Challenges in the Direct Monolithic Integration of III-V Devices and Si CMOS on Silicon Substrates”, 2009 Ieee 21st International Conference on Indium Phosphide & Related Materials (iprm). pp. 100-104, 2009.
N. Yang et al., Thermal Considerations for Advanced SOI Substrates Designed for III-V/Si Heterointegration. 2009.
T. E. Kazior et al., “A High Performance Differential Amplifier Through the Direct Monolithic Integration of InP HBTs and Si CMOS on Silicon Substrates”, in 2009 Ieee/Mtt-S International Microwave Symposium, Vols 1-3, 2009, pp. 1113-1116.
E. A. Fitzgerald et al., “Monolithic III-V/Si Integration”, in Graphene and Emerging Materials for Post-Cmos Applications, vol. 19, 2009, pp. 345-350.

2008

J. F. Falth, Yoon, S. F., and Fitzgerald, E. A., “The influence of substrate temperature on InAsN quantum dots grown by molecular beam epitaxy”, Nanotechnology, vol. 19. 2008.
K. P. Chen et al., “Characterization of GaAs grown on SiGe/Si graded substrates using p-n junction diodes”, Journal of Applied Physics, vol. 104. 2008.
H. Tanoto et al., “Structural and optical properties of stacked self-assembled InAs/InGaAs quantum dots on graded Si(1)(-)(x)Ge(x)/Si substrate”, Applied Physics Letters, vol. 92. 2008.
H. Tanoto et al., “Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy”, Journal of Applied Physics, vol. 103. 2008.
D. Lubyshev et al., “Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates”, Journal of Vacuum Science & Technology B, vol. 26. pp. 1115-1119, 2008.
K. L. Lew et al., “InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer”, Electronics Letters, vol. 44. pp. 243 - U25, 2008.
J. F. Faelth, Yoon, S. F., Tan, K. H., and Fitzgerald, E. A., “The effect of nitrogen pressure during molecular beam epitaxy growth of InAsN quantum dots”, Nanotechnology, vol. 19. 2008.
D. Lubyshev, Fastenau, J. M., Wu, Y., Liu, W. K., Bulsara, M. T., and Fitzgerald, E. A., “MBE GROWTH OF InP-HBT STRUCTURES ON Ge-ON-INSULATOR/Si SUBSTRATES BY MBE”, in 2008 Ieee 20th International Conference on Indium Phosphide and Related Materials (iprm), 2008, pp. 411-413.
E. A. Fitzgerald et al., Monolithic III-V/Si Integration. 2008.
E. A. Fitzgerald et al., “Monolithic III-V/Si Integration”, in Sige, Ge, and Related Compounds 3: Materials, Processing, and Devices, vol. 16, 2008, pp. 1015-1020.

2007

H. P. Yu et al., “The effect of an yttrium interlayer on a ni germanided metal gate workfunction in SiO2/HfO2”, Ieee Electron Device Letters, vol. 28. pp. 1098-1101, 2007.
A. P. Vajpeyi, Chua, S. J., Tripathy, S., and Fitzgerald, E. A., “Effect of carrier density on the surface morphology and optical properties of nanoporous GaN prepared by UV assisted electrochemical etching”, Applied Physics Letters, vol. 91. 2007.
T. Parodos et al., “Effect of dislocations on VLWIR HgCdTe photodiodes”, Journal of Electronic Materials, vol. 36. pp. 1068-1076, 2007.
K. L. Lew et al., “High gain AlGaAs/GaAs heterojunction bipolar transistor fabricated on SiGe/Si substrate”, Journal of Vacuum Science & Technology B, vol. 25. pp. 902-905, 2007.
H. Hartono, Soh, C. B., Chua, S. J., and Fitzgerald, E. A., “Fabrication and characterization of nano-porous GaN template for strain relaxed GaN growth”, Physica Status Solidi B-Basic Solid State Physics, vol. 244. pp. 1793-1796, 2007.
H. Hartono, Soh, C. B., Chow, S. Y., Chua, S. J., and Fitzgerald, E. A., “Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template”, Applied Physics Letters, vol. 90. 2007.
N. J. Quitoriano and Fitzgerald, E. A., “Alternative slip system activation in lattice-mismatched InP/InGaAs interfaces”, Journal of Applied Physics, vol. 101. 2007.
H. Hartono, Chen, P., Chua, S. J., and Fitzgerald, E. A., “Growth of InN and its effect on InGaN epilayer by metalorganic chemical vapor deposition”, Thin Solid Films, vol. 515. pp. 4408-4411, 2007.
H. G. Chew, Zheng, F., Choi, W. K., Chim, W. K., Foo, Y. L., and Fitzgerald, E. A., “Influence of reductant and germanium concentration on the growth and stress development of germanium nanocrystals in silicon oxide matrix”, Nanotechnology, vol. 18. 2007.
C. B. Soh, Hartono, H., Chow, S. Y., Chua, S. J., and Fitzgerald, E. A., “Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth”, Applied Physics Letters, vol. 90. 2007.
A. Chen et al., “Two-dimensional AlGaInP/GaInP photonic crystal membrane lasers operating in the visible regime at room temperature”, Applied Physics Letters, vol. 90. 2007.
H. Hartono, Soh, C. B., Chua, S. J., and Fitzgerald, E. A., “High quality GaN grown from a nanoporous GaN template”, Journal of the Electrochemical Society, vol. 154. pp. H1004 - H1007, 2007.
H. Hartono, Soh, C. B., Chua, S. J., and Fitzgerald, E. A., “Annihilation of threading dislocations in strain relaxed nano-porous GaN template for high quality GaN growth”, in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4 No 7 2007, vol. 4, 2007, pp. 2572-2575.

2006

H. P. Yu et al., “Work function tuning of n-channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate”, Applied Physics Letters, vol. 89. 2006.
W. K. Choi, Chew, H. G., Zheng, F., Chim, W. K., Foo, Y. L., and Fitzgerald, E. A., “Stress development of germanium nanocrystals in silicon oxide matrix”, Applied Physics Letters, vol. 89. 2006.
M. Gonzalez et al., “Deep level defects in proton radiated GaAs grown on metamorphic SiGe/Si substrates”, Journal of Applied Physics, vol. 100. 2006.
H. Q. Le, Chua, S. J., Koh, Y. W., Loh, K. P., and Fitzgerald, E. A., “Systematic studies of the epitaxial growth of single-crystal ZnO nanorods on GaN using hydrothermal synthesis”, Journal of Crystal Growth, vol. 293. pp. 36-42, 2006.
O. Kwon, Boeckl, J. J., Lee, M. L., Pitera, A. J., Fitzgerald, E. A., and Ringel, S. A., “Monolithic integration of AlGaInP laser diodes on SiGe/Si substrates by molecular beam epitaxy”, Journal of Applied Physics, vol. 100. 2006.
A. P. Vajpeyi et al., “Optical activation of Eu ions in nanoporous GaN films”, Journal of Applied Physics, vol. 99. 2006.
H. G. Chew, Choi, W. K., Chim, W. K., and Fitzgerald, E. A., Fabrication of germanium nanowires by oblique angle deposition, vol. 5. 2006.

2005

H. Q. Le et al., “Growth of single crystal ZnO nanorods on GaN using an aqueous solution method”, Applied Physics Letters, vol. 87. 2005.
N. Ariel, Ceder, G., Sadoway, D. R., and Fitzgerald, E. A., “Electrochemically controlled transport of lithium through ultrathin SiO2”, Journal of Applied Physics, vol. 98. 2005.

2003

G. Taraschi, Saini, S., Fan, W. W., Kimerling, L. C., and Fitzgerald, E. A., “Nanostructure and infrared photoluminescence of nanocrystalline Ge formed by reduction of Si0.75Ge0.25O2/Si0.75Ge0.25 using various H-2 pressures”, Journal of Applied Physics, vol. 93. pp. 9988-9996, 2003.

2000

L. M. Giovane, Luan, H. C., Fitzgerald, E. A., and Kimerling, L. C., “Strained SiGe materials for high quantum efficiency photodiodes at lambda=1.3 to 1.5 mu m”, in Infrared Applications of Semiconductors Iii, vol. 607, 2000, pp. 255-264.

1998

E. A. Fitzgerald and Kimerling, L. C., “Silicon-based microphotonics and integrated optoelectronics”, Mrs Bulletin, vol. 23. pp. 39-47, 1998.

1997

L. M. Giovane, Liao, L., Lim, D. R., Agarwal, A. M., Fitzgerald, E. A., and Kimerling, L. C., Si0.5Ge0.5 relaxed buffer photodetectors and low-loss polycrystalline silicon waveguides for integrated optical interconnects at lambda=1.3 mu m, vol. 3007. 1997.

1992

Y. H. XIE et al., “LUMINESCENCE AND STRUCTURAL STUDY OF POROUS SILICON FILMS”, JOURNAL OF APPLIED PHYSICS, vol. 71. pp. 2403-2407, 1992.
B. JALALI, LEVI, A. F. J., Ross, F. M., and FITZGERALD, E. A., “SIGE WAVE-GUIDE PHOTODETECTORS GROWN BY RAPID THERMAL CHEMICAL VAPOR-DEPOSITION”, ELECTRONICS LETTERS, vol. 28. pp. 269-271, 1992.
J. Michel, Fitzgerald, E. A., XIE, Y. H., SILVERMAN, P. J., Morse, M., and Kimerling, L. C., “PHOTOLUMINESCENCE INVESTIGATIONS OF GRADED, TOTALLY RELAXED GEXSI1-X STRUCTURES”, Journal of Electronic Materials, vol. 21. pp. 1099-1104, 1992.
J. Michel et al., “DOPANT ENHANCEMENT OF THE 1.54 MU-M EMISSION OF ERBIUM IMPLANTED IN SILICON”, in Proceedings of the 16th International Conference on Defects in Semiconductors, Pts 1-3, vol. 83, 1992, pp. 653-658.