Publications

Found 5 results
Filters: Author is KatayamaYoshida, H.  [Clear All Filters]
1995
F. Gan, Assali, L. V. C., and Kimerling, L. C., Electronic structure of erbium centers in silicon, in Icds-18 - Proceedings of the 18th International Conference on Defects in Semiconductors, Pts 1-4, vol. 196-, M. Suezawa and KatayamaYoshida, H. 1995, pp. 579 - 583.
J. Michel, PALM, J., Gan, F., Ren, F. Y. G., Zheng, B., Dunham, S. T., and Kimerling, L. C., Erbium in silicon: A defect system for optoelectronic integrated circuits, in Icds-18 - Proceedings of the 18th International Conference on Defects in Semiconductors, Pts 1-4, vol. 196-, M. Suezawa and KatayamaYoshida, H. 1995, pp. 585 - 589.
G. J. Norga, Black, M. R., Black, K. A., MSAAD, H., Michel, J., and Kimerling, L. C., High sensitivity detection of silicon surface reactions by photoconductance decay, in Icds-18 - Proceedings of the 18th International Conference on Defects in Semiconductors, Pts 1-4, vol. 196-, M. Suezawa and KatayamaYoshida, H. 1995, pp. 1531 - 1536.
K. Wada, Nakanishi, H., and Kimerling, L. C., Reactivation of Si donors and Zn acceptors in plasma-irradiated GaAs by reverse BiAs annealing, in Icds-18 - Proceedings of the 18th International Conference on Defects in Semiconductors, Pts 1-4, vol. 196-2, M. Suezawa and KatayamaYoshida, H. 1995, pp. 1401 - 1405.
S. Zhao, Assali, L. V. C., and Kimerling, L. C., The structure and bonding of iron-acceptor pairs in silicon, in Icds-18 - Proceedings of the 18th International Conference on Defects in Semiconductors, Pts 1-4, vol. 196-, M. Suezawa and KatayamaYoshida, H. 1995, pp. 1333 - 1337.