Publications

Found 7 results
Filters: Author is Gan, F.  [Clear All Filters]
2003
L. V. C. Assali, Gan, F., Kimerling, L. C., and Justo, J. F., Electronic structure of light emitting centers in Er doped Si, Applied Physics a-Materials Science & Processing, vol. 76, no. 6, pp. 991 - 997, 2003.
1995
F. Gan, Assali, L. V. C., and Kimerling, L. C., Electronic structure of erbium centers in silicon, in Icds-18 - Proceedings of the 18th International Conference on Defects in Semiconductors, Pts 1-4, vol. 196-, M. Suezawa and KatayamaYoshida, H. 1995, pp. 579 - 583.
J. Michel, PALM, J., Gan, F., Ren, F. Y. G., Zheng, B., Dunham, S. T., and Kimerling, L. C., Erbium in silicon: A defect system for optoelectronic integrated circuits, in Icds-18 - Proceedings of the 18th International Conference on Defects in Semiconductors, Pts 1-4, vol. 196-, M. Suezawa and KatayamaYoshida, H. 1995, pp. 585 - 589.