Publications

Found 114 results
Filters: Author is Eugene A. Fitzgerald  [Clear All Filters]
2015
N. Y. Pacella, Bulsara, M. T., Drazek, C., Guiot, E., and Fitzgerald, E. A., Fabrication and Thermal Budget Considerations of Advanced Ge and InP SOLES Substrates, Ecs Journal of Solid State Science and Technology, vol. 4, no. 7, pp. P258 - P264, 2015.
K. Mukherjee, Deotare, P. B., and Fitzgerald, E. A., Improved photoluminescence characteristics of order-disorder AlGaInP quantum wells at room and elevated temperatures, Applied Physics Letters, vol. 106, no. 14, p. 142109, 2015.
S. Saylan, Milakovich, T., Hadi, S. Abdul, Nayfeh, A., Fitzgerald, E. A., and Dahlem, M. S., Multilayer antireflection coating design for GaAs0.P-69(0.31)/Si dual-junction solar cells, Solar Energy, vol. 122, pp. 76 - 86, 2015.
R. S. Omampuliyur, Bhuiyan, M., Han, Z., Jing, Z., Li, L., Fitzgerald, E. A., Thompson, C. V., and Choi, W. K., Nanostructured Thin Film Silicon Anodes for Li-Ion Microbatteries, Journal of Nanoscience and Nanotechnology, vol. 15, no. 7, pp. 4926 - 4933, 2015.
E. A. Fitzgerald, Langdo, T. A., McGovern, K. M., and Renjilian, R., Point-of-Drinking Water Purification Innovation: The Water Initiative. 2015.
A. Kadir, Huang, C. Chih, Lee, K. Eng Kian, Fitzgerald, E. A., and Chua, S. Jin, Response to "Comment on 'Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system'" [Appl. Phys. Lett. 106, 176101 (2015)], Applied Physics Letters, vol. 106, no. 17, p. 176102, 2015.
D. Kohen, Bao, S., Lee, K. Hong, Lee, K. Eng Kian, Tan, C. Seng, Yoon, S. Fatt, and Fitzgerald, E. A., The role of AsH3 partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD - Application to a 200 mm GaAs virtual substrate, Journal of Crystal Growth, vol. 421, pp. 58 - 65, 2015.
K. Mukherjee, Norman, A. G., Akey, A. J., Buonassisi, T., and Fitzgerald, E. A., Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence, Journal of Applied Physics, vol. 118, no. 11, p. 115306, 2015.
2012
Y. Y. Liang, Yoon, S. F., Ngo, C. Y., Loke, W. K., and Fitzgerald, E. A., Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 mu m room-temperature emission, Journal of Physics D-Applied Physics, vol. 45, no. 14, 2012.
P. Sharma, Milakovich, T., Bulsara, M. T., and Fitzgerald, E. A., Controlling Epitaxial GaAsxP1-x/Si1-yGey Heterovalent Interfaces, Sige, Ge, and Related Compounds 5: Materials, Processing, and Devices, vol. 50, no. 9, pp. 333 - 337, 2012.
Y. Y. Liang, Yoon, S. F., Ngo, C. Y., Loke, W. K., and Fitzgerald, E. A., InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrates (GeOI) using molecular beam epitaxy, Physica Status Solidi C: Current Topics in Solid State Physics, Vol 9, vol. 9, no. 2, 2012.
E. A. Fitzgerald, Materials Integration for III-V/SiGe plus CMOS Integrated Circuit Platforms, Sige, Ge, and Related Compounds 5: Materials, Processing, and Devices, vol. 50, no. 9, pp. 1033 - 1037, 2012.

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