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H. J. KIM and Thompson, C. V., THE EFFECTS OF DOPANTS ON SURFACE-ENERGY-DRIVEN SECONDARY GRAIN-GROWTH, Journal of Applied Physics, vol. 67, no. 2, pp. 757 - 767, 1990.
H. A. ATWATER, Thompson, C. V., and KIM, H. J., THE ROLE OF POINT-DEFECTS IN ION-BOMBARDMENT-ENHANCED AND DOPANT-ENHANCED GRAIN-GROWTH IN SILICON THIN-FILMS, Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, vol. 39, no. 1-4, pp. 64 - 67, 1989.
H. J. KIM and Thompson, C. V., KINETIC MODELING OF GRAIN-GROWTH IN POLYCRYSTALLINE SILICON FILMS DOPED WITH PHOSPHORUS OR BORON, Journal of the Electrochemical Society, vol. 135, no. 9, pp. 2312 - 2319, 1988.
H. J. KIM and Thompson, C. V., COMPENSATION OF GRAIN-GROWTH ENHANCEMENT IN DOPED SILICON FILMS, Applied Physics Letters, vol. 48, no. 6, pp. 399 - 401, 1986.