POSTDOCTORAL ASSOCIATE IN RESISTIVE SWITCHING OXIDES IN NEUROMORPHIC COMPUTING, to assume a position in the Laboratory for Electrochemical Interfaces in collaboration with the Crystal Physics and Electroceramics Laboratory. The goal is to study the mechanisms and control the properties of resistive switching in oxide thin films to enable energy-efficient, fast and reliable neuromorphic computing devices. The scope involves making well controlled nm-scale films and characterizing their structural, electrical, electrochemical and chemical properties by a combination of electrical, electrochemical, scanning probe, and synchrotron X-ray methods.
REQUIRED: a Ph.D. in materials science and engineering, physics, chemistry, electrical engineering, mechanical engineering, or related field.
Application material should include a CV, brief statement of your research accomplishments and goals (0.5-1 page, which may be uploaded in the cover letter field), and contact address for three references (which may be included as part of the statement/cover letter).
Apply to job number 15754 via the MIT Jobs site.