Scanning tunneling microscope investigation of local density of states in Al-doped ZnO thin films

TitleScanning tunneling microscope investigation of local density of states in Al-doped ZnO thin films
Publication TypeJournal Article
Year of Publication2011
AuthorsLikovich, EM, Jaramillo, R, Russell, KJ, Ramanathan, S, Narayanamurti, V
JournalPhysical Review B
Volume83
Issue7
Date Published2011/02/24/
KeywordsScanning Probe Microscopy, Scanning Tunneling Microscopy, Transparent Conducting Oxides, ZnO
Abstract

The electrical properties of grain boundaries in technologically relevant oxide thin films are the subject of both applied and fundamental research. Here we present an investigation of the local density of states (LDOS) in sputtered Al-doped ZnO using a scanning tunneling microscope. We observe a pronounced difference in the tunneling conductivity recorded on- and off-grain, with the grain boundary LDOS peaked ~600 meV below the Fermi level. This provides a direct measurement of the distribution of charge traps that is of relevance in advancing understanding of carrier conduction in this transparent conducting oxide.

URLhttp://link.aps.org/doi/10.1103/PhysRevB.83.075430
Short TitlePhys. Rev. B