|Title||Mid-infrared integrated photonics on silicon: a perspective|
|Publication Type||Journal Article|
|Year of Publication||2018|
|Authors||Lin, H, Luo, Z, Gu, T, Kimerling, LC, Wada, K, Agarwal, A, Hu, J|
|Pagination||393 - 420|
|Keywords||broad-band, chalcogenide wave-guides, frequency comb generation, ge-on-si, integrated photonics, lithium-niobate photonics, m wavelength range, mid-IR, mu-m, nonlinear-optical response, optical sensor, quantum cascade lasers, silicon photonics, spectrometer, subwavelength grating coupler|
The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-mu m wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.