Frances M. Ross

  • Ellen Swallow Richards Professor in Materials Science and Engineering
  • B.A. Hons. Cambridge University (Mathematics Part IA, Natural Sciences Part IB, Physics Part II)
  • Ph.D. Materials Science and Metallurgy Cambridge University

Electrochemistry; Self Assembly; Semiconductors; Surfaces, Interfaces, and Thin Films

Frances M. Ross

Research

Building functional nanostructures with atomic level precision requires a detailed understanding of materials growth and the physics of self-assembly at the nanoscale. Frances Ross uses transmission electron microscopy to watch crystals as they grow and react, and scanning tunneling microscopy to measure the properties of nanomaterials. These microscopy techniques help her group to explore the growth mechanisms of nanocrystals on graphene, electrochemically deposited nanostructures and catalytically grown nanowires. Frances is excited by the ongoing advances in microscopy instrumentation which give intriguing opportunities for future experiments.

Recent News

2018 Materials Day

November 28, 2018

Materials Day Symposium and Poster Session
October 10, 2018
Kresge Auditorium This year’s annual MIT MRL Materials Day Symposium will be held on Wednesday, Oct. 10, 2018, in Kresge Auditorium from 8:30 a.m. to 3:30 p.m. The symposium will focus on imaging-…  

Publications

2020

W. Lei et al., “A general strategy for bimetallic Pt-based nano-branched structures as highly active and stable oxygen reduction and methanol oxidation bifunctional catalysts”, Nano Research. Springer Science and Business Media LLC, 2020.
Y. Li, Singh, A., Reidy, K., Jo, S. S., Ross, F. M., and Jaramillo, R., “Making Large‐Area Titanium Disulfide Films at Reduced Temperature by Balancing the Kinetics of Sulfurization and Roughening”, Advanced Functional Materials. Wiley, p. 2003617, 2020.
P. Periwal et al., “Catalytically mediated epitaxy of 3D semiconductors on van der Waals substrates”, Applied Physics Reviews, vol. 7, no. 3. AIP Publishing, p. 031402, 2020.
S. B. Alam et al., “In situ TEM modification of individual silicon nanowires and their charge transport mechanisms”, Nanotechnology. IOP Publishing, 2020.

2019

J. Klein et al., “Impact of substrate induced band tail states on the electronic and optical properties of MoS2”, Applied Physics Letters, vol. 115. p. 261603, 2019.

2018

M. R. Hauwiller et al., “Dynamics of Nanoscale Dendrite Formation in Solution Growth Revealed Through in Situ Liquid Cell Electron Microscopy”, NANO LETTERS, vol. 18. pp. 6427-6433, 2018.
P. M. Vereecken, Radisic, A., and Ross, F. M., “Differential Inhibition during Cu Electrodeposition on Ru: Combined Electrochemical and Real-Time TEM Studies”, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 166. p. D3129—D3135, 2018.
S. W. Chee et al., “Directed Self-Assembly of Ge Quantum Dots Using Focused Si2+ Ion Beam Patterning”, SCIENTIFIC REPORTS, vol. 8. 2018.
X. Zhou et al., “Electrical transport across grain boundaries in graphene monolayers on SiC(0 0 0 (1)over-bar)”, 2D MATERIALS, vol. 5. 2018.
J. H. Park, Schneider, N. M., Steingart, D. A., Deligianni, H., Kodambaka, S., and Ross, F. M., “Control of Growth Front Evolution by Bi Additives during ZnAu Electrodeposition”, NANO LETTERS, vol. 18. pp. 1093-1098, 2018.
F. M. Ross, “Improving quantification in liquid cell electron microscopy of materials reactions”, ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, vol. 256. 2018.
T. Gupta, Schneider, N. M., Park, J. H., Steingart, D., and Ross, F. M., “Spatially dependent dose rate in liquid cell transmission electron microscopy”, NANOSCALE, vol. 10. pp. 7702-7710, 2018.

2017

A. M. Lord, Ramasse, Q. M., Kepaptsoglou, D. M., Periwal, P., Ross, F. M., and Wilks, S. P., “Stability of Schottky and Ohmic Au Nanocatalysts to ZnO Nanowires”, NANO LETTERS, vol. 17. pp. 6626-6636, 2017.
J. H. Park, Steingart, D. A., Kodambaka, S., and Ross, F. M., “Electrochemical electron beam lithography: Write, read, and erase metallic nanocrystals on demand”, SCIENCE ADVANCES, vol. 3. 2017.
N. M. Schneider, Park, J. H., Grogan, J. M., Steingart, D. A., Bau, H. H., and Ross, F. M., “Nanoscale evolution of interface morphology during electrodeposition”, NATURE COMMUNICATIONS, vol. 8. 2017.
S. -H. Bae et al., “Unveiling the carrier transport mechanism in epitaxial graphene for forming wafer-scale, single-domain graphene”, PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, vol. 114. pp. 4082-4086, 2017.
S. -H. Bae et al., “Unveiling the carrier transport mechanism in epitaxial graphene for forming wafer-scale, single-domain graphene”, Proceedings of the National Academy of Sciences of the United States of America, vol. 114. pp. 4082-4086, 2017.

2016

F. M. Ross, Wang, C., and de Jonge, N., “Transmission electron microscopy of specimens and processes in liquids”, MRS BULLETIN, vol. 41. pp. 791-799, 2016.
D. Jacobsson et al., “Interface dynamics and crystal phase switching in GaAs nanowires”, NATURE, vol. 531. p. 317+, 2016.
F. Panciera, Norton, M. M., Alam, S. B., Hofmann, S., Molhave, K., and Ross, F. M., “Controlling nanowire growth through electric field-induced deformation of the catalyst droplet”, Nature Communications, vol. 7. 2016.
N. M. Schneider, Park, J. H., Norton, M. M., Ross, F. M., and Bau, H. H., “Automated analysis of evolving interfaces during in situ electron microscopy”, ADVANCED STRUCTURAL AND CHEMICAL IMAGING, vol. 2. 2016.
Y. -C. Chou, Panciera, F., Reuter, M. C., Stach, E. A., and Ross, F. M., “Nanowire growth kinetics in aberration corrected environmental transmission electron microscopy”, CHEMICAL COMMUNICATIONS, vol. 52. pp. 5686-5689, 2016.

2015

S. B. Alam, Panciera, F., Hansen, O., Molhave, K., and Ross, F. M., “Creating New VLS Silicon Nanowire Contact Geometries by Controlling Catalyst Migration”, NANO LETTERS, vol. 15. pp. 6535-6541, 2015.
C. -Y. Wen, Reuter, M. C., Su, D., Stach, E. A., and Ross, F. M., “Strain and Stability of Ultrathin Ge Layers in Si/Ge/Si Axial Heterojunction Nanowires”, NANO LETTERS, vol. 15. pp. 1654-1659, 2015.
C. -M. Wang, Liao, H. -G., and Ross, F. M., “Observation of materials processes in liquids by electron microscopy”, MRS BULLETIN, vol. 40. pp. 46-52, 2015.
F. M. Ross, “Opportunities and challenges in liquid cell electron microscopy”, SCIENCE, vol. 350. 2015.
A. D. Gamalski, Tersoff, J., Kodambaka, S., Zakharov, D. N., Ross, F. M., and Stach, E. A., “The Role of Surface Passivation in Controlling Ge Nanowire Faceting”, NANO LETTERS, vol. 15. pp. 8211-8216, 2015.
J. H. Park et al., “Control of Electron Beam-Induced Au Nanocrystal Growth Kinetics through Solution Chemistry”, NANO LETTERS, vol. 15. pp. 5314-5320, 2015.
F. Panciera et al., “Synthesis of nanostructures in nanowires using sequential catalyst reactions”, NATURE MATERIALS, vol. 14. p. 820+, 2015.
S. W. Chee, Pratt, S. H., Hattar, K., Duquette, D., Ross, F. M., and Hull, R., “Studying localized corrosion using liquid cell transmission electron microscopy”, CHEMICAL COMMUNICATIONS, vol. 51. pp. 168-171, 2015.

2014

N. M. Schneider, Norton, M. M., Mendel, B. J., Grogan, J. M., Ross, F. M., and Bau, H. H., “Electron-Water Interactions and Implications for Liquid Cell Electron Microscopy”, JOURNAL OF PHYSICAL CHEMISTRY C, vol. 118. pp. 22373-22382, 2014.
M. Shahid, Yesibolati, N., Reuter, M. C., Ross, F. M., and Alshareef, H. N., “Layer-by-layer assembled graphene-coated mesoporous SnO2 spheres as anodes for advanced Li-ion batteries”, JOURNAL OF POWER SOURCES, vol. 263. pp. 239-245, 2014.
K. W. Schwarz, Tersoff, J., Kodambaka, S., and Ross, F. M., “Jumping-Catalyst Dynamics in Nanowire Growth”, PHYSICAL REVIEW LETTERS, vol. 113. 2014.
N. Yesibolati et al., “SnO2 Anode Surface Passivation by Atomic Layer Deposited HfO2 Improves Li-Ion Battery Performance”, SMALL, vol. 10. pp. 2849-2858, 2014.
Y. -C. Chou, Hillerich, K., Tersoff, J., Reuter, M. C., Dick, K. A., and Ross, F. M., “Atomic-Scale Variability and Control of III-V Nanowire Growth Kinetics”, SCIENCE, vol. 343. pp. 281-284, 2014.
J. M. Grogan, Schneider, N. M., Ross, F. M., and Bau, H. H., “Bubble and Pattern Formation in Liquid Induced by an Electron Beam”, NANO LETTERS, vol. 14. pp. 359-364, 2014.
M. den Heijer, Shao, I., Radisic, A., Reuter, M. C., and Ross, F. M., “Patterned electrochemical deposition of copper using an electron beam”, APL MATERIALS, vol. 2. 2014.
B. J. Kim, Tersoff, J., Kodambaka, S., Jang, J. -S., Stach, E. A., and Ross, F. M., “Au Transport in Catalyst Coarsening and Si Nanowire Formation”, NANO LETTERS, vol. 14. pp. 4554-4559, 2014.
N. M. Schneider et al., “In-Situ Electron Microscopy of Electrochemical Deposition, Dendrite Growth, and Etching”, JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, vol. 136. 2014.
S. W. Chee, Duquette, D. J., Ross, F. M., and Hull, R., “Metastable Structures in Al Thin Films Before the Onset of Corrosion Pitting as Observed using Liquid Cell Transmission Electron Microscopy”, MICROSCOPY AND MICROANALYSIS, vol. 20. pp. 462-468, 2014.

2013

K. Hillerich, Dick, K. A., Wen, C. -Y., Reuter, M. C., Kodambaka, S., and Ross, F. M., “Strategies To Control Morphology in Hybrid Group III-V/Group IV Heterostructure Nanowires”, NANO LETTERS, vol. 13. pp. 903-908, 2013.
M. M. Khayyat, Wacaser, B. A., Reuter, M. C., Ross, F. M., Sadana, D. K., and Chen, T. -C., “Nanoscale chemical templating of Si nanowires seeded with Al”, NANOTECHNOLOGY, vol. 24. 2013.
S. W. Chee, Kammler, M., Balasubramanian, P., Reuter, M. C., Hull, R., and Ross, F. M., “Microstructural changes in silicon induced by patterning with focused ion beams of Ga, Si and Au”, ULTRAMICROSCOPY, vol. 127. pp. 126-131, 2013.
Y. -C. Chou, Wen, C. -Y., Reuter, M. C., Su, D., Stach, E. A., and Ross, F. M., “In Situ Growth of Si Nanowires Using Transmission Electron Microscopy”, in STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS) 55 -AND- LOW-DIMENSIONAL NANOSCALE ELECTRONIC AND PHOTONIC DEVICES 6, 2013, vol. 58, pp. 105-111.
F. M. Ross, Heijer, den, Williamson, M. J., and Steingart, D., Correlating Light Microscopy and Electron Microscopy for Measuring Microstructural Evolution During Electrochemical Deposition, vol. 179. 2013, pp. 179-182.

2012

B. J. Kim, Wen, C. -Y., Tersoff, J., Reuter, M. C., Stach, E. A., and Ross, F. M., “Growth Pathways in Ultralow Temperature Ge Nucleation from Au”, NANO LETTERS, vol. 12. pp. 5867-5872, 2012.
C. Kallesoe et al., “In Situ TEM Creation and Electrical Characterization of Nanowire Devices”, NANO LETTERS, vol. 12. pp. 2965-2970, 2012.
Y. -C. Chou, Wen, C. -Y., Reuter, M. C., Su, D., Stach, E. A., and Ross, F. M., “Controlling the Growth of Si/Ge Nanowires and Heterojunctions Using Silver-Gold Alloy Catalysts”, ACS NANO, vol. 6. pp. 6407-6415, 2012.
J. Kim, Hong, A. J., Nah, J. -W., Shin, B., Ross, F. M., and Sadana, D. K., “Three-Dimensional a-Si:H Solar Cells on Glass Nanocone Arrays Patterned by Self-Assembled Sn Nanospheres”, ACS NANO, vol. 6. pp. 265-271, 2012.
S. -H. Ji, Hannon, J. B., Tromp, R. M., Perebeinos, V., Tersoff, J., and Ross, F. M., “Atomic-scale transport in epitaxial graphene”, NATURE MATERIALS, vol. 11. pp. 114-119, 2012.
J. Kim, Hong, A. J., Nah, J. -W., Shin, B., Ross, F. M., and Sadana, D. K., “Three-Dimensional a-Si:H Solar Cells on Glass Nanocone Arrays Patterned by Self-Assembled Sn Nanospheres”, Acs Nano, vol. 6. pp. 265-271, 2012.
J. Kim, Hong, A. J., Nah, J. -W., Shin, B., Ross, F. M., and Sadana, D. K., “Three-Dimensional a-Si:H Solar Cells on Glass Nanocone Arrays Patterned by Self-Assembled Sn Nanospheres”, Acs Nano, vol. 6. pp. 265-271, 2012.
R. Haight, Ross, F. M., and Hannon, J., HANDBOOK OF INSTRUMENTATION AND TECHNIQUES FOR SEMICONDUCTOR NANOSTRUCTURE CHARACTERIZATION INTRODUCTION, vol. 1-2. 2012, p. XXI—XXIV.
S. Kodambaka and Ross, F. M., TRANSMISSION ELECTRON MICROSCOPY AND ULTRA-HIGH VACUUM TRANSMISSION ELECTRON MICROSCOPY OF SEMICONDUCTOR NANOSTRUCTURES, vol. 1-2. 2012, pp. 43-88.

2011

P. A. Bennett, He, Z., Smith, D. J., and Ross, F. M., “Endotaxial silicide nanowires: A review”, THIN SOLID FILMS, vol. 519. pp. 8434-8440, 2011.
N. de Jonge and Ross, F. M., “Electron microscopy of specimens in liquid”, NATURE NANOTECHNOLOGY, vol. 6. pp. 695-704, 2011.
P. A. Bennett, Smith, D. J., He, Z., Reuter, M. C., Ellis, A. W., and Ross, F. M., “In situ observations of endotaxial growth of CoSi2 nanowires on Si(110) using ultrahigh vacuum transmission electron microscopy”, NANOTECHNOLOGY, vol. 22. 2011.
C. -Y. Wen et al., “Periodically Changing Morphology of the Growth Interface in Si, Ge, and GaP Nanowires”, PHYSICAL REVIEW LETTERS, vol. 107. 2011.
K. W. Schwarz, Tersoff, J., Kodambaka, S., Chou, Y. -C., and Ross, F. M., “Geometrical Frustration in Nanowire Growth”, PHYSICAL REVIEW LETTERS, vol. 107. 2011.

2010

C. Kallesoe, Wen, C. -Y., Molhave, K., Boggild, P., and Ross, F. M., “Measurement of Local Si-Nanowire Growth Kinetics Using In situ Transmission Electron Microscopy of Heated Cantilevers”, SMALL, vol. 6. pp. 2058-2064, 2010.
C. -Y. Wen, Tersoff, J., Reuter, M. C., Stach, E. A., and Ross, F. M., “Step-Flow Kinetics in Nanowire Growth”, PHYSICAL REVIEW LETTERS, vol. 105. 2010.
F. M. Ross, “Controlling nanowire structures through real time growth studies”, REPORTS ON PROGRESS IN PHYSICS, vol. 73. 2010.
P. Chaudhari et al., “Heteroepitaxial silicon film growth at 600 degrees C from an Al-Si eutectic melt”, THIN SOLID FILMS, vol. 518. pp. 5368-5371, 2010.
C. -Y. Wen, Reuter, M. C., Tersoff, J., Stach, E. A., and Ross, F. M., “Structure, Growth Kinetics, and Ledge Flow during Vapor-Solid-Solid Growth of Copper-Catalyzed Silicon Nanowires”, NANO LETTERS, vol. 10. pp. 514-519, 2010.
R. Hull et al., “Bridging the length scales between lithographic patterning and self assembly mechanisms in fabrication of semiconductor nanostructure arrays”, in 16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS, 2010, vol. 209.
B. A. Wacaser, Khayyat, M. M., Reuter, M. C., Sadana, D. K., and Ross, F. M., “TECHNICAL ADVANTAGES AND CHALLENGES FOR CORE-SHELL MICRO/NANOWIRE LARGE AREA PV DEVICES”, in 35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2010.
F. M. Ross, Wen, C. -Y., Kodambaka, S., Wacaser, B. A., Reuter, M. C., and Stach, E. A., “The growth and characterization of Si and Ge nanowires grown from reactive metal catalysts”, PHILOSOPHICAL MAGAZINE, vol. 90. pp. 2807-2816, 2010.
F. M. Ross, Wen, C. -Y., Kodambaka, S., Wacaser, B. A., Reuter, M. C., and Stach, E. A., “The growth and characterization of Si and Ge nanowires grown from reactive metal catalysts”, PHILOSOPHICAL MAGAZINE, vol. 90. pp. 4769-4778, 2010.
C. -Y. Wen, Reuter, M. C., Tersoff, J., Stach, E. A., and Ross, F. M., “Fabrication and Properties of Abrupt Si-Ge Heterojunction Nanowire Structures”, in SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES, 2010, vol. 33, pp. 671-680.

2009

B. A. Wacaser et al., “Growth System, Structure, and Doping of Aluminum-Seeded Epitaxial Silicon Nanowires”, NANO LETTERS, vol. 9. pp. 3296-3301, 2009.
B. J. Kim, Tersoff, J., Wen, C. -Y., Reuter, M. C., Stach, E. A., and Ross, F. M., “Determination of Size Effects during the Phase Transition of a Nanoscale Au-Si Eutectic”, PHYSICAL REVIEW LETTERS, vol. 103. 2009.
C. -Y. Wen et al., “Formation of Compositionally Abrupt Axial Heterojunctions in Silicon-Germanium Nanowires”, SCIENCE, vol. 326. pp. 1247-1250, 2009.
S. Kodambaka, Tersoff, J., Wen, C. -Y., Reuter, M. C., Stach, E. A., and Ross, F. M., “Effect of Catalyst Composition on Si Nanowire Growth Kinetics”, MICROSCOPY AND MICROANALYSIS, vol. 15. pp. 1226-1227, 2009.
F. M. Ross, “NANOWIRES Bringing order to twin-plane defects”, NATURE NANOTECHNOLOGY, vol. 4. pp. 17-18, 2009.
A. Portavoce, Kammler, M., Hull, R., Reuter, M. C., Copel, M., and Ross, F. M., “Growth of nanostructures by locally modified surface reactivity”, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol. 12. pp. 25-30, 2009.
S. Kodambaka, Tersoff, J., Reuter, M. C., and Ross, F. M., “Growth kinetics of Si and Ge nanowires”, in QUANTUM DOTS, PARTICLES, AND NANOCLUSTERS VI, 2009, vol. 7224.

2008

C. Wiethoff, Ross, F. M., Copel, M., von Hoegen, M. H. -, and Heringdorf, F. -J. M. zu, “Au stabilization and coverage of sawtooth facets on Si nanowires grown by vapor-liquid-solid epitaxy”, NANO LETTERS, vol. 8. pp. 3065-3068, 2008.
R. Hull et al., “Synthesis and functionalization of epitaxial quantum dot nanostructures for nanoelectronic architectures”, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol. 11. pp. 160-168, 2008.
B. J. Kim, Tersoff, J., Kodambaka, S., Reuter, M. C., Stach, E. A., and Ross, F. M., “Kinetics of Individual Nucleation Events Observed in Nanoscale Vapor-Liquid-Solid Growth”, SCIENCE, vol. 322. pp. 1070-1073, 2008.
K. A. Dick, Deppert, K., Samuelson, L., Wallenberg, R., and Ross, F. M., “Control of GaP and GaAs Nanowire Morphology through Particle and Substrate Chemical Modification”, NANO LETTERS, vol. 8. pp. 4087-4091, 2008.
C. Lang, Ross, F. M., and Cockayne, D. J. H., “Morphological transitions during Si capping in Ge/Si nanoislands”, JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, vol. 5. pp. 286-289, 2008.
M. Gherasimova, Hull, R., Reuter, M. C., and Ross, F. M., “Pattern level assembly of Ge quantum dots on Si with focused ion beam templating”, APPLIED PHYSICS LETTERS, vol. 93. 2008.
A. Portavoce, Hull, R., Reuter, M. C., Copel, M., and Ross, F. M., “Control of homoepitaxial Si nanostructures by locally modified surface reactivity”, APPLIED PHYSICS LETTERS, vol. 92. 2008.
P. L. Gai, Sharma, R., and Ross, F. M., “Environmental (S)TEM studies of gas-liquid-solid interactions under reaction conditions”, MRS BULLETIN, vol. 33. pp. 107-114, 2008.

2007

S. Kodambaka, Tersoff, J., Reuter, M. C., and Ross, F. M., “Germanium nanowire growth below the eutectic temperature”, SCIENCE, vol. 316. pp. 729-732, 2007.
K. A. Dick et al., “The morphology of axial and branched nanowire heterostructures”, NANO LETTERS, vol. 7. pp. 1817-1822, 2007.
A. Portavoce, Hull, R., Reuter, M. C., and Ross, F. M., “Nanometer-scale control of single quantum dot nucleation through focused ion-beam implantation”, PHYSICAL REVIEW B, vol. 76. 2007.
A. Portavoce, Hull, R., and Ross, F. M., Nanoscale Lateral Control of Ge Quantum Dot Nucleation Sites on Si(001) Using Focused Ion Beam Implantation. 2007, pp. 397-427.
F. M. Ross, “Dynamic electron microscopy of semiconductor nanowire and quantum dot growth”, in Perspectives on Inorganic, Organic, and Biological Crystal Growth: From Fundamentals to Applications, 2007, vol. 916, pp. 363-376.

2006

A. Portavoce, Kammler, M., Hull, R., Reuter, M. C., and Ross, F. M., “Mechanism of the nanoscale localization of Ge quantum dot nucleation on focused ion beam templated Si(001) surfaces”, NANOTECHNOLOGY, vol. 17. pp. 4451-4455, 2006.
J. C. H. Spence et al., “Imaging dislocation cores - the way forward”, PHILOSOPHICAL MAGAZINE, vol. 86. pp. 4781-4796, 2006.
A. Radisic, Vereecken, P. M., Searson, P. C., and Ross, F. M., “The morphology and nucleation kinetics of copper islands during electrodeposition”, SURFACE SCIENCE, vol. 600. pp. 1817-1826, 2006.
S. Kodambaka, Tersoff, J., Reuter, M. C., and Ross, F. M., “Diameter-independent kinetics in the vapor-liquid-solid growth of Si nanowires”, PHYSICAL REVIEW LETTERS, vol. 96. 2006.
J. B. Hannon, Kodambaka, S., Ross, F. M., and Tromp, R. M., “The influence of the surface migration of gold on the growth of silicon nanowires”, NATURE, vol. 440. pp. 69-71, 2006.
S. Kodambaka, Hannon, J. B., Tromp, R. M., and Ross, F. M., “Control of Si nanowire growth by oxygen”, NANO LETTERS, vol. 6. pp. 1292-1296, 2006.
A. Radisic, Vereecken, P. M., Hannon, J. B., Searson, P. C., and Ross, F. M., “Quantifying electrochemical nucleation and growth of nanoscale clusters using real-time kinetic data”, NANO LETTERS, vol. 6. pp. 238-242, 2006.
C. Lang, Kodambaka, S., Ross, F. M., and Cockayne, D. J. H., “Real time observation of GeSi/Si(001) island shrinkage due to surface alloying during Si capping”, PHYSICAL REVIEW LETTERS, vol. 97. 2006.
A. Radisic, Ross, F. M., and Searson, P. C., “In situ study of the growth kinetics of individual island electrodeposition of copper”, JOURNAL OF PHYSICAL CHEMISTRY B, vol. 110. pp. 7862-7868, 2006.
F. M. Ross, “A unique tool for imaging crystal growth”, MATERIALS TODAY, vol. 9. pp. 54-55, 2006.

2005

F. M. Ross, Tersoff, J., and Reuter, M. C., “Sawtooth faceting in silicon nanowires”, PHYSICAL REVIEW LETTERS, vol. 95. 2005.
M. Kammler, Chidambarrao, D., Schwarz, K. W., Black, C. T., and Ross, F. M., “Controlled nucleation of dislocations by a spatially localized stress field”, APPLIED PHYSICS LETTERS, vol. 87. 2005.
F. M. Ross, Tersoff, J., Kodambaka, S., and Reuter, M. C., “Growth and surface structure of silicon nanowires observed in real time in the electron microscope”, in Microscopy of Semiconducting Materials, 2005, vol. 107, pp. 283-286.

2004

F. M. Ross, Kammler, M., Reuter, M. C., and Hull, R., “In-situ observations of self-assembled island nucleation on patterned substrates”, PHILOSOPHICAL MAGAZINE, vol. 84. pp. 2687-2697, 2004.
A. Portavoce, Kammler, M., Hull, R., Reuter, M. C., Copel, M., and Ross, F. M., “Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001)”, PHYSICAL REVIEW B, vol. 70. 2004.
F. M. Ross, Kammler, M., Walsh, M. E., and Reuter, M. C., “In situ reflection electron microscopy of Ge island nucleation on mesa structures”, MICROSCOPY AND MICROANALYSIS, vol. 10. pp. 105-111, 2004.

2003

V. Narayanan, Guha, S., Bojarczuk, N. A., and Ross, F. M., “Growth and characterization of epitaxial Si/(LaxY1-x)(2)O-3/Si heterostructures”, JOURNAL OF APPLIED PHYSICS, vol. 93. pp. 251-258, 2003.
M. Kammler, Hull, R., Reuter, M. C., and Ross, F. M., “Lateral control of self-assembled island nucleation by focused-ion-beam micropatterning”, APPLIED PHYSICS LETTERS, vol. 82. pp. 1093-1095, 2003.
N. A. Bojarczuk et al., “Epitaxial silicon and germanium on buried insulator heterostructures and devices”, APPLIED PHYSICS LETTERS, vol. 83. pp. 5443-5445, 2003.
C. Detavernier et al., “An off-normal fibre-like texture in thin films on single-crystal substrates”, NATURE, vol. 426. pp. 641-645, 2003.
R. Hull et al., “Precision placement of heteroepitaxial semiconductor quantum dots”, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, vol. 101. pp. 1-8, 2003.
F. M. Ross, Thompson, C. V., Chiang, T., and Sawin, H. H., “Ion-induced chemical vapor deposition of copper films with nanocellular microstructures”, APPLIED PHYSICS LETTERS, vol. 83. pp. 1225-1227, 2003.
M. J. Williamson, Tromp, R. M., Vereecken, P. M., Hull, R., and Ross, F. M., “Dynamic microscopy of nanoscale cluster growth at the solid-liquid interface”, NATURE MATERIALS, vol. 2. pp. 532-536, 2003.
F. M. Ross, Thompson, C. V., Chiang, T., and Sawin, H. H., “Ion-induced chemical vapor deposition of copper films with nanocellular microstructures”, Applied Physics Letters, vol. 83. pp. 1225-1227, 2003.

2002

V. Derycke, Martel, R., Radosvljevic, M., Ross, F. M., and Avouris, P., “Catalyst-free growth of ordered single-walled carbon nanotube networks”, NANO LETTERS, vol. 2. pp. 1043-1046, 2002.
C. A. Ross et al., “Micromagnetic behavior of electrodeposited cylinder arrays”, PHYSICAL REVIEW B, vol. 65. 2002.

2001

M. Copel, Cartier, E., and Ross, F. M., “Formation of a stratified lanthanum silicate dielectric by reaction with Si(001)”, APPLIED PHYSICS LETTERS, vol. 78. pp. 1607-1609, 2001.
D. N. Dunn, Hull, R., Ross, F. M., and Tromp, R. M., “Texture transformations in reactive metal films deposited upon amorphous substrates”, JOURNAL OF APPLIED PHYSICS, vol. 89. pp. 2635-2640, 2001.
F. M. Ross, “Dynamic studies of semiconductor growth processes using in situ electron microscopy”, MRS BULLETIN, vol. 26. pp. 94-101, 2001.
F. M. Ross, Tromp, R. M., Tersoff, J., and Reuter, M. C., “Island growth from a surface instability in the GeSi system”, in MICROSCOPY OF SEMICONDUCTING MATERIALS 2001, 2001, pp. 177-180.

2000

E. A. Stach, Hull, R., Tromp, R. M., Ross, F. M., Reuter, M. C., and Bean, J. C., “In-situ transmission electron microscopy studies of the interaction between dislocations in strained SiGe/Si(001) heterostructures”, PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, vol. 80. pp. 2159-2200, 2000.
X. H. Liu, Ross, F. M., and Schwarz, K. W., “Dislocated epitaxial islands”, PHYSICAL REVIEW LETTERS, vol. 85. pp. 4088-4091, 2000.
R. M. Tromp, Ross, F. M., and Reuter, M. C., “Instability-driven SiGe island growth”, PHYSICAL REVIEW LETTERS, vol. 84. pp. 4641-4644, 2000.
T. W. Stone, Kane, E. M. O., Nikbakht, M. R., and Ross, F. M., “Presynaptic P2 receptors?”, JOURNAL OF THE AUTONOMIC NERVOUS SYSTEM, vol. 81. pp. 244-248, 2000.
F. M. Ross, “Growth processes and phase transformations studied by in situ transmission electron microscopy”, IBM JOURNAL OF RESEARCH AND DEVELOPMENT, vol. 44. pp. 489-501, 2000.
E. A. Stach, Schwarz, K. W., Hull, R., Ross, F. M., and Tromp, R. M., “New mechanism for dislocation blocking in strained layer epitaxial growth”, PHYSICAL REVIEW LETTERS, vol. 84. pp. 947-950, 2000.
F. M. Ross, “Transition states between pyramids and domes during Ge/Si island growth (vol 286, pg 1931, 1999)”, SCIENCE, vol. 287. p. 594, 2000.
C. A. Ross et al., “Incoherent magnetization reversal in 30-nm Ni particles”, PHYSICAL REVIEW B, vol. 62. pp. 14252-14258, 2000.
R. M. Tromp and Ross, F. M., “Advances in situ ultra-high vacuum electron microscopy: Growth of SiGe on Si”, ANNUAL REVIEW OF MATERIALS SCIENCE, vol. 30. pp. 431-449, 2000.

1999

R. Hull, Stach, E. A., Tromp, R., Ross, F. M., and Reuter, M., “Interactions of moving dislocations in semiconductors with point, line and planar defects”, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, vol. 171. pp. 133-146, 1999.
F. M. Ross, Bennett, P. A., Tromp, R. M., Tersoff, J., and Reuter, M., “Growth kinetics of CoSi2 and Ge islands observed with in situ transmission electron microscopy”, MICRON, vol. 30. pp. 21-32, 1999.
F. M. Ross, Tromp, R. M., and Reuter, M. C., “Transition states between pyramids and domes during Ge/Si island growth”, SCIENCE, vol. 286. pp. 1931-1934, 1999.
E. A. Stach, Hull, R., Tromp, R. M., Ross, F. M., Reuter, M. C., and Bean, J. C., “Quantitative experimental determination of the effect of dislocation - Dislocation interactions on strain relaxation in lattice mismatched heterostructures”, in III-V AND IV-IV MATERIALS AND PROCESSING CHALLENGES FOR HIGHLY INTEGRATED MICROELECTRONICS AND OPTOELECTRONICS, 1999, vol. 535, pp. 15-20.
F. M. Ross, Tersoff, J., Tromp, R. M., Reuter, M. C., and Bennett, P. A., “Island growth of Ge on Si(001) and CoSi2 on Si(111) studied with UHV electron microscopy”, JOURNAL OF ELECTRON MICROSCOPY, vol. 48. pp. 1059-1066, 1999.
F. M. Ross, Tromp, R. M., Tersoff, J., and Reuter, M. C., “Real time observations of the growth and development of self-assembled GeSi islands on Si(001)”, in MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS, 1999, pp. 103-106.

1998

F. M. Ross, Tersoff, J., and Tromp, R. M., “Ostwald ripening of self-assembled germanium islands on silicon(100)”, MICROSCOPY AND MICROANALYSIS, vol. 4. pp. 254-263, 1998.
C. A. Ross, Ross, F. M., Bertero, G., and Tang, K., “Microstructural evolution and thermal stability of thin CoCrTa/Cr films for longitudinal magnetic recording media”, IEEE TRANSACTIONS ON MAGNETICS, vol. 34. pp. 282-292, 1998.
F. M. Ross, Tersoff, J., and Tromp, R. M., “Coarsening of self-assembled Ge quantum dots on Si(001)”, PHYSICAL REVIEW LETTERS, vol. 80. pp. 984-987, 1998.
F. M. Ross, “Ge and CoSi2 island growth on Si studied by in situ UHV-TEM”, in ELECTRON MICROSCOPY 1998, VOL 3: MATERIALS SCIENCE 2, 1998, pp. 503-504.

1997

G. Oskam, Natarajan, A., Searson, P. C., and Ross, F. M., “The formation of porous GaAs in HF solutions”, APPLIED SURFACE SCIENCE, vol. 119. pp. 160-168, 1997.
F. M. Ross, Oskam, G., Searson, P. C., Macaulay, J. M., and Liddle, J. A., “Crystallographic aspects of pore formation in gallium arsenide and silicon”, PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, vol. 75. pp. 525-539, 1997.
F. M. Ross, Kilaas, R., Snoeck, E., Hytch, M., Thorel, A., and Normand, L., “Quantitative analysis of displacement at 90 degrees domain boundaries in BaTiO3 and PbTiO3”, in ATOMIC RESOLUTION MICROSCOPY OF SURFACES AND INTERFACES, 1997, vol. 466, pp. 245-252.
J. F. Scott and Ross, F. M., “New results on layer-structure perovskite ferroelectric thin-film memories”, FERROELECTRICS, vol. 201. pp. 43-53, 1997.
C. A. Ross and Ross, F. M., “Microstructural development of thin CoCrTa films on Cr underlayers”, in MAGNETIC ULTRATHIN FILMS, MULTILAYERS AND SURFACES - 1997, 1997, vol. 475, pp. 125-130.

1996

F. M. Ross et al., “Applications of electron microscopy in collaborative industrial research”, MRS BULLETIN, vol. 21. pp. 17-23, 1996.
N. G. Chopra, Ross, F. M., and Zettle, A., “Collapsing carbon nanotubes with an electron beam”, CHEMICAL PHYSICS LETTERS, vol. 256. pp. 241-245, 1996.
J. F. Scott, Ross, F. M., deAraujo, C. A. P., Scott, M. C., and Huffman, M., “Structure and device characteristics of SrBi2Ta2O9-based nonvolatile random-access memories”, MRS BULLETIN, vol. 21. pp. 33-39, 1996.
D. Loretto, Ross, F. M., and Lucas, C. A., “Quasi-one-dimensional CaF2 islands formed on Si(001) by molecular beam epitaxy”, APPLIED PHYSICS LETTERS, vol. 68. pp. 2363-2365, 1996.
J. F. Scott et al., “Some new results on strontium bismuth tantalate thin-film ferroelectric memory materials”, in FERROELECTRIC THIN FILMS V, 1996, vol. 433, pp. 77-84.
F. M. Ross and Searson, P. C., “In situ observation of an electrochemical etching reaction in silicon”, in IN SITU ELECTRON AND TUNNELING MICROSCOPY OF DYNAMIC PROCESSES, 1996, vol. 404, pp. 69-74.

1995

S. SCHUPPLER et al., “SIZE, SHAPE, AND COMPOSITION OF LUMINESCENT SPECIES IN OXIDIZED SI NANOCRYSTALS AND H-PASSIVATED POROUS SI”, PHYSICAL REVIEW B, vol. 52. pp. 4910-4925, 1995.
S. SCHUPPLER et al., “X-RAY ABSORPTION SPECTROSCOPY FROM H-PASSIVATED POROUS SI AND OXIDIZED SI NANOCRYSTALS”, in APPLICATIONS OF SYNCHROTRON RADIATION TECHNIQUES TO MATERIALS SCIENCE II, 1995, vol. 375, pp. 113-120.
S. SCHUPPLER et al., “SIZE, SHAPE, AND CRYSTALLINITY OF LUMINESCENT STRUCTURES IN OXIDIZED SI NANOCLUSTERS AND H-PASSIVATED POROUS SI”, in MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS, 1995, vol. 358, pp. 407-415.
F. M. Ross and Searson, P. C., “Dynamic observation of electrochemical etching in silicon”, in MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, vol. 146, pp. 511-514.

1994

D. Loretto, Ross, F. M., Lucas, C. A., and WONG, G. C. L., “DIRECT OBSERVATION OF INTERFACE AND SURFACE STEPS IN EPITAXIAL-FILMS BY DARK-FIELD TRANSMISSION ELECTRON-MICROSCOPY”, APPLIED PHYSICS LETTERS, vol. 65. pp. 1766-1768, 1994.
F. M. Ross, GIBSON, J. M., and TWESTEN, R. D., “DYNAMIC OBSERVATIONS OF INTERFACE MOTION DURING THE OXIDATION OF SILICON”, SURFACE SCIENCE, vol. 310. pp. 243-266, 1994.
F. M. Ross, “MATERIALS SCIENCE IN THE ELECTRON-MICROSCOPE”, MRS BULLETIN, vol. 19. pp. 17-20, 1994.
R. D. TWESTEN, GIBSON, J. M., and Ross, F. M., “VISUALIZATION OF DYNAMIC NEAR-SURFACE PROCESSES”, MRS BULLETIN, vol. 19. pp. 38-43, 1994.
S. SCHUPPLER et al., “DIMENSIONS OF LUMINESCENT OXIDIZED AND POROUS SILICON STRUCTURES”, PHYSICAL REVIEW LETTERS, vol. 72. pp. 2648-2651, 1994.
F. M. Ross, KOLA, R. R., Hull, R., and Bean, J. C., “MICROSTRUCTURAL EVOLUTION AND STRESS-RELAXATION IN SPUTTERED TUNGSTEN FILMS”, in INTERFACE CONTROL OF ELECTRICAL, CHEMICAL, AND MECHANICAL PROPERTIES, 1994, vol. 318, pp. 697-702.

1993

F. M. Ross, Hull, R., BAHNCK, D., Bean, J. C., PETICOLAS, L. J., and KING, C. A., “CHANGES IN ELECTRICAL DEVICE CHARACTERISTICS DURING THE INSITU FORMATION OF DISLOCATIONS”, APPLIED PHYSICS LETTERS, vol. 62. pp. 1426-1428, 1993.
F. M. Ross et al., “CHANGES IN ELECTRONIC DEVICE PROPERTIES DURING THE FORMATION OF DISLOCATIONS”, in EVOLUTION OF SURFACE AND THIN FILM MICROSTRUCTURE, 1993, vol. 280, pp. 483-492.
F. M. Ross et al., “CHANGES IN ELECTRICAL DEVICE CHARACTERISTICS DURING THE FORMATION OF DISLOCATIONS IN-SITU IN THE TEM”, in MICROSCOPY OF SEMICONDUCTING MATERIALS 1993, 1993, pp. 245-248.

1992

S. A. AUDET, WHITE, A. E., SHORT, K. T., HSIEH, Y. F., Ross, F. M., and RAFFERTY, C. S., “30 NM COSI2 SURFACE-LAYERS FOR CONTACT METALLIZATION IN COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR PROCESSES”, APPLIED PHYSICS LETTERS, vol. 61. pp. 2311-2313, 1992.
F. M. Ross and GIBSON, J. M., “DYNAMIC OBSERVATIONS OF INTERFACE PROPAGATION DURING SILICON OXIDATION”, PHYSICAL REVIEW LETTERS, vol. 68. pp. 1782-1785, 1992.
Y. H. XIE et al., “LUMINESCENCE AND STRUCTURAL STUDY OF POROUS SILICON FILMS”, JOURNAL OF APPLIED PHYSICS, vol. 71. pp. 2403-2407, 1992.
P. C. Searson, Macaulay, J. M., and Ross, F. M., “PORE MORPHOLOGY AND THE MECHANISM OF PORE FORMATION IN N-TYPE SILICON”, JOURNAL OF APPLIED PHYSICS, vol. 72. pp. 253-258, 1992.
B. JALALI, LEVI, A. F. J., Ross, F. M., and FITZGERALD, E. A., “SIGE WAVE-GUIDE PHOTODETECTORS GROWN BY RAPID THERMAL CHEMICAL VAPOR-DEPOSITION”, ELECTRONICS LETTERS, vol. 28. pp. 269-271, 1992.
F. M. Ross et al., “INSITU TRANSMISSION ELECTRON-MICROSCOPY MEASUREMENTS OF THE ELECTRICAL AND STRUCTURAL-PROPERTIES OF STRAINED LAYER GESI/SI P-N-JUNCTIONS”, JOURNAL OF VACUUM SCIENCE \& TECHNOLOGY B, vol. 10. pp. 2008-2012, 1992.
F. M. Ross and GIBSON, J. M., “SILICON SURFACE-MORPHOLOGY AND THE REACTION OF SILICON WITH OXYGEN”, in CHEMICAL SURFACE PREPARATION, PASSIVATION AND CLEANING FOR SEMICONDUCTOR GROWTH AND PROCESSING, 1992, vol. 259, pp. 87-91.
J. WERNSTEDT, OTTO, P., PUHLMANN, R., and Ross, F. M., “DIOPRAN-EXPERT - A CONSULTING EXPERT SYSTEMS FOR EXPERIMENTAL PROCESS ANALYSIS”, in IDENTIFICATION AND SYSTEM PARAMETER ESTIMATION 1991, VOLS 1 AND 2, 1992, vol. 1992, pp. 641-646.
J. M. Macaulay, Ross, F. M., Searson, P. C., SPUTZ, S. K., PEOPLE, R., and FRIEDERSDORF, L. E., “MICROSTRUCTURAL CHARACTERIZATION OF PHOTOLUMINESCENT POROUS SILICON”, in LIGHT EMISSION FROM SILICON, 1992, vol. 256, pp. 47-51.
S. B. NEWCOMB, Ross, F. M., OZKAYA, D., and STOBBS, W. M., “THE USES OF THE FRESNEL METHOD IN THE STUDY OF OXIDATION”, in MICROSCOPY OF OXIDATION, 1992, pp. 395-401.
J. M. GIBSON and Ross, F. M., “INSITU TRANSMISSION ELECTRON-MICROSCOPY OF THE ETCHING OF SILICON (111) SURFACES BY OXYGEN”, in STRUCTURE AND PROPERTIES OF INTERFACES IN MATERIALS, 1992, vol. 238, pp. 259-262.
R. Hull, Bean, J. C., Ross, F. M., BAHNCK, D., and PETICOLAS, L. J., “THE ROLES OF STRESS, GEOMETRY AND ORIENTATION ON MISFIT DISLOCATIONS KINETICS AND ENERGETICS IN EPITAXIAL STRAINED LAYERS”, in THIN FILMS : STRESS AND MECHANICAL PROPERTIES III, 1992, vol. 239, pp. 379-394.

1991

F. M. Ross and STOBBS, W. M., “THE CHARACTERIZATION OF GAAS/(AL,GA)AS HETEROSTRUCTURE INTERFACE ROUGHNESS USING FRESNEL ANALYSIS”, ULTRAMICROSCOPY, vol. 36. pp. 331-354, 1991.
F. M. Ross and STOBBS, W. M., “A STUDY OF THE INITIAL-STAGES OF THE OXIDATION OF SILICON USING THE FRESNEL METHOD”, PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, vol. 63. pp. 1-36, 1991.
F. M. Ross and STOBBS, W. M., “COMPUTER MODELING FOR FRESNEL CONTRAST ANALYSIS”, PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, vol. 63. pp. 37-70, 1991.
F. M. Ross and GIBSON, J. M., “HIGH-ENERGY TRANSMISSION ELECTRON-DIFFRACTION FROM SURFACE MONOLAYERS DURING SILICON OXIDATION”, in ADVANCES IN SURFACE AND THIN FILM DIFFRACTION, 1991, vol. 208, pp. 55-61.
F. M. Ross and GIBSON, J. M., “THE ETCHING OF SILICON BY OXYGEN OBSERVED BY INSITU TEM”, in ATOMIC LAYER GROWTH AND PROCESSING, 1991, vol. 222, pp. 219-224.
F. M. Ross and GIBSON, J. M., “THE OXIDATION OF SILICON OBSERVED INSITU BY IMAGING AND DIFFRACTION OF SURFACE MONOLAYERS”, INSTITUTE OF PHYSICS CONFERENCE SERIES. pp. 187-192, 1991.
F. M. Ross and GIBSON, J. M., “THE OXIDATION OF SILICON OBSERVED INSITU BY IMAGING AND DIFFRACTION OF SURFACE MONOLAYERS”, in MICROSCOPY OF SEMICONDUCTING MATERIALS 1991, 1991, vol. 117, pp. 187-192.

1990

F. M. Ross, GIBSON, J. M., and STOBBS, W. M., “THE USE OF FRESNEL CONTRAST TO STUDY THE INITIAL-STAGES OF THE INSITU OXIDATION OF SILICON”, in ATOMIC SCALE STRUCTURE OF INTERFACES, 1990, vol. 159, pp. 185-190.
M. J. HYTCH, BOOTHROYD, C. B., Ross, F. M., BITHELL, E. G., and STOBBS, W. M., “COMMENTS ON THE LIMITATIONS OF THE CHEMICAL MAPPING OF A III-V SEMICONDUCTOR INTERFACE USING HIGH-RESOLUTION LATTICE IMAGING”, in EMAG-MICRO 89, VOLS 1 AND 2: PHYSICAL / BIOLOGICAL, 1990, vol. 98, pp. 345-348.
M. J. HYTCH, BOOTHROYD, C. B., Ross, F. M., BITHELL, E. G., and STOBBS, W. M., “COMMENTS ON THE LIMITATIONS OF THE CHEMICAL MAPPING OF A III-V SEMICONDUCTOR INTERFACE USING HIGH-RESOLUTION LATTICE IMAGING”, INSTITUTE OF PHYSICS CONFERENCE SERIES. pp. 345-348, 1990.

1989

M. SCHIEBER et al., “CORRELATION BETWEEN MERCURIC IODIDE DETECTOR PERFORMANCE AND CRYSTALLINE PERFECTION”, NUCLEAR INSTRUMENTS \& METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, vol. 283. pp. 172-187, 1989.
C. B. BOOTHROYD et al., “THE DETERMINATION OF THE STRUCTURE AND COMPOSITION AT INTERFACES TO ATOMIC RESOLUTION”, ULTRAMICROSCOPY, vol. 29. pp. 18-30, 1989.
W. M. STOBBS and Ross, F. M., “THE FRESNEL METHOD FOR THE CHARACTERIZATION OF INTERFACES”, in EVALUATION OF ADVANCED SEMICONDUCTOR MATERIALS BY ELECTRON MICROSCOPY, 1989, vol. 203, pp. 183-202.
W. M. STOBBS et al., “DEVELOPMENTS IN TEM TECHNIQUES FOR THE CHARACTERIZATION OF SEMICONDUCTOR SUPERLATTICES AND HETEROSTRUCTURES”, INSTITUTE OF PHYSICS CONFERENCE SERIES. pp. 271-280, 1989.
W. M. STOBBS et al., “DEVELOPMENTS IN TEM TECHNIQUES FOR THE CHARACTERIZATION OF SEMICONDUCTOR SUPERLATTICES AND HETEROSTRUCTURES”, in MICROSCOPY OF SEMICONDUCTING MATERIALS 1989, 1989, vol. 100, pp. 271-280.

1988

F. M. Ross and STOBBS, W. M., “INTERFACE ANALYSIS USING ELASTIC-SCATTERING IN THE TRANSMISSION ELECTRON-MICROSCOPE - APPLICATION TO THE OXIDATION OF SILICON”, SURFACE AND INTERFACE ANALYSIS, vol. 12. pp. 35-44, 1988.

1987

M. HUDLICKY and Ross, F. M., “WICHTERLE REACTION REVISITED”, ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, vol. 193. p. 113—ORGN, 1987.
K. B. ALEXANDER, BOOTHROYD, C. B., BRITTON, E. G., BAXTER, C. S., Ross, F. M., and STOBBS, W. M., “THE SIMULTANEOUS RETENTION OF RESOLUTION AND LAYER CONTRAST IN HIGH-RESOLUTION IMAGES OF GAAS/(AI,GA)AS HETEROSTRUCTURES”, INSTITUTE OF PHYSICS CONFERENCE SERIES. pp. 15-20, 1987.
C. B. BOOTHROYD, BRITTON, E. G., Ross, F. M., BAXTER, C. S., ALEXANDER, K. B., and STOBBS, W. M., “METHODS FOR THE ASSESSMENT OF LAYER ORIENTATION, INTERFACE STEP STRUCTURE AND CHEMICAL-COMPOSITION IN GAAS/(AL,GA)AS MULTILAYERS”, INSTITUTE OF PHYSICS CONFERENCE SERIES. pp. 195-200, 1987.