Found 114 results
Filters: Author is Eugene A. Fitzgerald  [Clear All Filters]
C. Heidelberger and Fitzgerald, E. A., GaAsP/InGaP heterojunction bipolar transistors grown by MOCVD, Journal of Applied Physics, vol. 121, no. 4, p. 045703, 2017.
B. Wang, Lee, K. Hong, Wang, C., Wang, Y., Made, R. I., Sasangka, W. Aji, Nguyen, V. Cuong, Lee, K. Eng Kian, Tana, C. Seng, Yoon, S. Fatt, Fitzgerald, E. A., and Michel, J., The integration of InGaP LEDs with CMOS on 200 mm Silicon wafers, in Smart Photonic and Optoelectronic Integrated Circuits Xix, vol. 10107, L. A. Eldada, Lee, E. H., and He, S. Bellingham: Spie-Int Soc Optical Engineering, 2017, p. UNSP - 101070Y.
N. Leong Yurong, Tan, K. Hua, Loke, W. Kai, Wicaksono, S., Li, D., Yoon, S. Fatt, Sharma, P., Milakovich, T., Bulsara, M. T., and Fitzgerald, E. A., Performance of 1eV GaNAsSb-based photovoltaic cell on Si substrate at different growth temperatures, Progress in Photovoltaics, vol. 25, no. 4, pp. 327 - 332, 2017.
Y. Kim, Cruz, S. S., Lee, K., Alawode, B. O., Choi, C., Song, Y., Johnson, J. M., Heidelberger, C., Kong, W., Choi, S., Qiao, K., Almansouri, I., Fitzgerald, E. A., Kong, J., Kolpak, A. M., Hwang, J., and Kim, J., Remote epitaxy through graphene enables two-dimensional material-based layer transfer, Nature, vol. 544, no. 7650, p. 340 - +, 2017.
X. Zhao, Heidelberger, C., Fitzgerald, E. A., and del Alamo, J. A., Source/Drain Asymmetry in InGaAs Vertical Nanowire MOSFETs, Ieee Transactions on Electron Devices, vol. 64, no. 5, pp. 2161 - 2165, 2017.
R. Jia, Zeng, L., Chen, G., and Fitzgerald, E. A., Thermal conductivity of GaAs/Ge nanostructures, Applied Physics Letters, vol. 110, no. 22, p. 222105, 2017.
X. Sang Nguyen, Goh, X. Long, Zhang, L., Zhang, Z., Arehart, A. R., Ringel, S. A., Fitzgerald, E. A., and Chua, S. Jin, Deep level traps in GaN LEDs grown by metal organic vapour phase epitaxy on an 8 inch Si(111) substrate, Japanese Journal of Applied Physics, vol. 55, no. 6, p. 060306, 2016.
B. Wang, Wang, C., Kohen, D. A., Made, R. I., Lee, K. Eng Kian, Kim, T., Milakovich, T., Fitzgerald, E. A., Yoon, S. Fatt, and Michel, J., Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe, Journal of Crystal Growth, vol. 441, pp. 78 - 83, 2016.
M. Vaisman, Mukherjee, K., Masuda, T., Yaung, K. Nay, Fitzgerald, E. A., and Lee, M. Larry, Direct-Gap 2.1-2.2 eV AlInP Solar Cells on GaInAs/GaAs Metamorphic Buffers, Ieee Journal of Photovoltaics, vol. 6, no. 2, pp. 571 - 577, 2016.
D. Kohen, Nguyen, X. Sang, Yadav, S., Kumar, A., Made, R. I., Heidelberger, C., Gong, X., Lee, K. Hong, Lee, K. Eng Kian, Yeo, Y. Chia, Yoon, S. Fatt, and Fitzgerald, E. A., Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer, Aip Advances, vol. 6, no. 8, p. 085106, 2016.
S. Yadav, ,, Kohen, D., Nguyen, X. Sang, Lee, K. Hong, Gong, X., Antoniadis, D., Fitzgerald, E. A., and Yeo, Y. Chia, In0.30Ga0.70As QW MOSFETs with Peak Mobility exceeding 3000 cm(2)/V.s Fabricated on Si Substrates, 2016 Ieee Silicon Nanoelectronics Workshop (snw), pp. 126 - 127, 2016.
K. E. Lee and Fitzgerald, E. A., Metamorphic transistors: Building blocks for hetero-integrated circuits, Mrs Bulletin, vol. 41, no. 3, pp. 210 - 217, 2016.
S. A. Fortuna, Heidelberger, C., Messer, K., Han, K., Fitzgerald, E. A., Yablonovitch, E., and Wu, M. C., Optical Antenna Enhanced Spontaneous Emission Rate in Electrically Injected Nanoscale III-V LED, in 2016 International Semiconductor Laser Conference (islc), New York: Ieee, 2016.
R. Jia and Fitzgerald, E. A., Parameters influencing interfacial morphology in GaAs/Ge superlattices grown by metal organic chemical vapor deposition, Journal of Crystal Growth, vol. 435, pp. 50 - 55, 2016.
B. Wang, Wang, C., Lee, K. Hong, Bao, S., Lee, K. Eng Kian, Tan, C. Seng, Yoon, S. Fatt, Fitzgerald, E. A., and Michel, J., Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates, in Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting Xx, vol. 9768, H. Jeon, Tu, L. W., Krames, M. R., and Strassburg, M. Bellingham: Spie-Int Soc Optical Engineering, 2016, p. 97681J.
K. Hong Lee, Bao, S., Wang, B., Wang, C., Yoon, S. Fatt, Michel, J., Fitzgerald, E. A., and Tan, C. Seng, Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer, Aip Advances, vol. 6, no. 2, p. 025028, 2016.
R. E. Brandt, Mangan, N. M., Li, J. V., Kurchin, R. C., Milakovich, T., Levcenco, S., Fitzgerald, E. A., Unold, T., and Buonassisi, T., Temperature- and Intensity-Dependent Photovoltaic Measurements to Identify Dominant Recombination Pathways, in 2016 Ieee 43rd Photovoltaic Specialists Conference (pvsc), New York: Ieee, 2016, pp. 1997 - 2001.
S. Abdul Hadi, Fitzgerald, E. A., and Nayfeh, A., Theoretical efficiency limit for a two-terminal multi-junction "step-cell" using detailed balance method, Journal of Applied Physics, vol. 119, no. 7, p. 073104, 2016.
S. Abdul Hadi, Milakovich, T., Shah, R., Fitzgerald, E. A., and Nayfeh, A., Towards Demonstration of GaAs0.76P0.24/ Si Dual Junction Step-Cell, in 2016 Ieee 43rd Photovoltaic Specialists Conference (pvsc), New York: Ieee, 2016, pp. 1881 - 1886.