Publications

Found 4 results
Filters: Author is Dunham, S. T.  [Clear All Filters]
1998
S. Zhao and Kimerling, L. C., Defect reactions induced by reactive ion etching, in Semiconductor Process and Device Performance Modelling, vol. 490, S. T. Dunham and Nelson, J. S. 1998, pp. 123 - 128.
S. P. Riege, Andleigh, V., Thompson, C. V., and Frost, H. J., Modeling of grain structure evolution and its impact on the reliability of Al(Cu) thin film interconnects, in Semiconductor Process and Device Performance Modelling, vol. 490, S. T. Dunham and Nelson, J. S. 1998, pp. 219 - 224.
1995
J. Michel, PALM, J., Gan, F., Ren, F. Y. G., Zheng, B., Dunham, S. T., and Kimerling, L. C., Erbium in silicon: A defect system for optoelectronic integrated circuits, in Icds-18 - Proceedings of the 18th International Conference on Defects in Semiconductors, Pts 1-4, vol. 196-, M. Suezawa and KatayamaYoshida, H. 1995, pp. 585 - 589.