Publications

Found 372 results
Filters: Author is Carl V. Thompson  [Clear All Filters]
2000
M. J. Kobrinsky and Thompson, C. V., Activation volume for inelastic deformation in polycrystalline Ag films at low temperatures, in Thin Films-Stresses and Mechanical Properties Viii, vol. 594, R. Vinci, Kraft, O., Moody, N., Besser, P., and Shaffer, E. 2000, pp. 57 - 62.
M. J. Kobrinsky and Thompson, C. V., Activation volume for inelastic deformation in polycrystalline Ag thin films, Acta Materialia, vol. 48, no. 3, pp. 625 - 633, 2000.
M. J. Kobrinsky and Thompson, C. V., Activation volume for inelastic deformation in polycrystalline Ag thin films (vol 48, pg 625, 2000), Acta Materialia, vol. 48, no. 11, pp. 3025 - 3025, 2000.
W. R. Fayad, Kobrinsky, M. J., and Thompson, C. V., Analytic model for the development of bamboo microstructures in thin film strips undergoing normal grain growth, Physical Review B, vol. 62, no. 8, pp. 5221 - 5227, 2000.
C. S. Hau-Riege and Thompson, C. V., The effects of microstructural transitions at width transitions on interconnect reliability, Journal of Applied Physics, vol. 87, no. 12, pp. 8467 - 8472, 2000.
S. P. Hau-Riege and Thompson, C. V., The effects of the mechanical properties of the confinement material on electromigration in metallic interconnects, Journal of Materials Research, vol. 15, no. 8, pp. 1797 - 1802, 2000.
S. P. Hau-Riege and Thompson, C. V., Electromigration saturation in a simple interconnect tree, Journal of Applied Physics, vol. 88, no. 5, pp. 2382 - 2385, 2000.
S. P. Hau-Riege and Thompson, C. V., In situ transmission electron microscope studies of the kinetics of abnormal grain growth in electroplated copper films, Applied Physics Letters, vol. 76, no. 3, pp. 309 - 311, 2000.
C. V. Thompson, Structure evolution during processing of polycrystalline films, Annual Review of Materials Science, vol. 30, pp. 159 - 190, 2000.
S. C. Seel, Thompson, C. V., Hearne, S. J., and Floro, J. A., Tensile stress evolution during deposition of Volmer-Weber thin films, Journal of Applied Physics, vol. 88, no. 12, pp. 7079 - 7088, 2000.
C. S. Hau-Riege and Thompson, C. V., Use of scanned laser annealing to control the bamboo grain length of Cu interconnects, Applied Physics Letters, vol. 77, no. 3, pp. 352 - 354, 2000.
1999
H. Gao, Zhang, L., Nix, W. D., Thompson, C. V., and Arzt, E., Crack-like grain-boundary diffusion wedges in thin metal films, Acta Materialia, vol. 47, no. 10, pp. 2865 - 2878, 1999.
V. T. Srikar and Thompson, C. V., Diffusion and electromigration of copper in SiO2-passivated single-crystal aluminum interconnects, Applied Physics Letters, vol. 74, no. 1, pp. 37 - 39, 1999.
V. T. Srikar and Thompson, C. V., Dislocation pile-ups as sites for formation of electromigration-induced transgranular slit-like voids in Al interconnects, Scripta Materialia, vol. 42, no. 1, pp. 97 - 102, 1999.
Y. C. Joo, Thompson, C. V., Baker, S. P., and Arzt, E., Electromigration proximity effects of two neighboring fast-diffusion segments in single-crystal aluminum lines, Journal of Applied Physics, vol. 85, no. 4, pp. 2108 - 2113, 1999.
C. V. Thompson, On the grain size and coalescence stress resulting from nucleation and growth processes during formation of polycrystalline thin films, Journal of Materials Research, vol. 14, no. 7, pp. 3164 - 3168, 1999.
J. Greiser, Muller, D., Mullner, P., Thompson, C. V., and Arzt, E., Growth of giant grains in silver thin films, Scripta Materialia, vol. 41, no. 7, pp. 709 - 714, 1999.
V. K. Andleigh, Park, Y. J., and Thompson, C. V., Interconnect failure mechanism maps for different metallization materials and processes, in Materials Reliability in Microelectronics Ix, vol. 563, C. A. Volkert, Verbuggen, A. H., and Brown, D. D. 1999, pp. 59 - 64.
V. K. Andleigh, Srikar, V. T., Park, Y. J., and Thompson, C. V., Mechanism maps for electromigration-induced failure of metal and alloy interconnects, Journal of Applied Physics, vol. 86, no. 12, pp. 6737 - 6745, 1999.
J. J. Clement, Riege, S. P., Cvijetic, R., and Thompson, C. V., Methodology for electromigration critical threshold design rule evaluation, Ieee Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 18, no. 5, pp. 576 - 581, 1999.

Pages