Publications

Found 372 results
Filters: Author is Carl V. Thompson  [Clear All Filters]
2003
K. Y. Zang, Chua, S. J., Wang, L. S., and Thompson, C. V., Evolution of AlN buffer layers on silicon and effects on the properties of epitaxial GaN films, in 5th International Conference on Nitride Semiconductors (icns-5), Proceedings, M. Stutzmann 2003, pp. 2067 - 2071.
C. L. Gan, Thompson, C. V., Pey, K. L., and Choi, W. K., Experimental characterization and modeling of the reliability of three-terminal dual-damascene Cu interconnect trees, Journal of Applied Physics, vol. 94, no. 2, pp. 1222 - 1228, 2003.
C. L. Gan, Thompson, C. V., Pey, K. L., Choi, W. K., Chang, C. W., and Guo, Q., Experimental characterization of the reliability of multi-terminal dual-damascene copper interconnect trees, in Materials, Technology and Reliability for Advanced Interconnects and Low-K Dielectrics-2003, vol. 766, A. J. McKerrow, Leu, J., Kraft, O., and Kikkawa, T. 2003, pp. 121 - 126.
F. Ross, Thompson, C. V., Chiang, T., and Sawin, H. H., Ion-induced chemical vapor deposition of copper films with nanocellular microstructures, Applied Physics Letters, vol. 83, no. 6, pp. 1225 - 1227, 2003.
S. M. Alam, Troxel, D. E., and Thompson, C. V., Layout-specific circuit evaluation in 3-D integrated circuits, Analog Integrated Circuits and Signal Processing, vol. 35, no. 2-3, pp. 199 - 205, 2003.
A. R. Takahashi, Thompson, C. V., and Carter, W. Craig, Metallic island coalescence: Molecular dynamics simulations of boundary formation and tensile strain in polycrystalline thin films, in Multiscale Phenomena in Materials-Experiments and Modeling Related to Mechanical Behavior, vol. 779, H. M. Zbib, Lassila, D. H., Levine, L. E., and Hemker, K. J. 2003, pp. 97 - 102.
R. Tadepalli and Thompson, C. V., Quantitative characterization and process optimization of low-temperature bonded copper interconnects for 3-D integrated circuits. 2003.
S. C. Seel and Thompson, C. V., Tensile stress generation during island coalescence for variable island-substrate contact angle, Journal of Applied Physics, vol. 93, no. 11, pp. 9038 - 9042, 2003.
2002
S. M. Alam, Troxel, D. E., and Thompson, C. V., A comprehensive layout methodology and layout-specific circuit analyses for three-dimensional integrated circuits. 2002.
C. L. Gan, Wei, F., Thompson, C. V., Pey, K. L., Choi, W. K., Hau-Riege, S. P., and Yu, B., Contrasting failure characteristics of different levels of Cu dual-damascene metallization. 2002.
M. J. Kobrinsky and Thompson, C. V., Dominant inelastic mechanisms in FCC metallic thin films and lines, in Stress-Induced Phenomena in Metallization, vol. 612, S. P. Baker, Korhonen, M. A., Arzt, E., and Ho, P. S. 2002, pp. 205 - 216.
C. L. Gan, Thompson, C. V., Pey, K. L., Choi, W. K., Wei, F., Yu, B., and Hau-Riege, S. P., Experimental characterization of the reliability of 3-terminal dual-damascene copper interconnect trees, in Silicon Materials-Processing, Characterization and Reliability, vol. 716, J. L. Veteran, OMeara, D. L., Misra, V., and Ho, P. S. 2002, pp. 431 - 436.
J. Zhao, Lu, L., Thompson, C. V., Lu, Y. F., and Song, W. D., Growth of (001)-oriented PZT thin films on amorphous SiO2 by pulsed laser deposition, in Second International Symposium on Laser Precision Microfabrication, vol. 4426, I. Miyamoto, Lu, Y. F., Sugioka, K., and Dubowski, J. J. 2002, pp. 221 - 224.
F. Wei, Gan, C. L., Thompson, C. V., Clement, J. J., Hau-Riege, S. P., Pey, K. L., Choi, W. K., Tay, H. L., Yu, B., and Radhakrishnan, M. K., Length effects on the reliability of dual-damascene Cu interconnects, in Silicon Materials-Processing, Characterization and Reliability, vol. 716, J. L. Veteran, OMeara, D. L., Misra, V., and Ho, P. S. 2002, pp. 645 - 650.
C. Friesen and Thompson, C. V., Reversible stress relaxation during precoalescence interruptions of Volmer-Weber thin film growth, Physical Review Letters, vol. 89, no. 12, 2002.
2001
W. H. Griest, Wise, M. B., Hart, K. J., Lammert, S. A., Thompson, C. V., and Vass, A. A., Biological agent detection and identification by the block II chemical biological mass spectrometer, Field Analytical Chemistry and Technology, vol. 5, no. 4, pp. 177 - 184, 2001.
S. A. Lammert, Plass, W. R., Thompson, C. V., and Wise, M. B., Design, optimization and initial performance of a toroidal rf ion trap mass spectrometer, International Journal of Mass Spectrometry, vol. 212, no. 1-3, pp. 25 - 40, 2001.
M. J. Kobrinsky, Thompson, C. V., and Gross, M. E., Diffusional creep in damascene Cu lines, Journal of Applied Physics, vol. 89, no. 1, pp. 91 - 98, 2001.
C. V. Thompson and Wise, M. B., Direct Sampling Ion Trap Mass Spectrometry: A simple approach to quality field analysis., Abstracts of Papers of the American Chemical Society, vol. 221, pp. U462 - U462, 2001.
J. A. Floro, Hearne, S. J., Hunter, J. A., Kotula, P., Chason, E., Seel, S. C., and Thompson, C. V., The dynamic competition between stress generation and relaxation mechanisms during coalescence of Volmer-Weber thin films, Journal of Applied Physics, vol. 89, no. 9, pp. 4886 - 4897, 2001.
C. L. Gan, Thompson, C. V., Pey, K. L., Choi, W. K., Tay, H. L., Yu, B., and Radhakrishnan, M. K., Effect of current direction on the lifetime of different levels of Cu dual-damascene metallization, Applied Physics Letters, vol. 79, no. 27, pp. 4592 - 4594, 2001.
M. J. Kobrinsky, Dehm, G., Thompson, C. V., and Arzt, E., Effects of thickness on the characteristic length scale of dislocation plasticity in Ag thin films, Acta Materialia, vol. 49, no. 17, pp. 3597 - 3607, 2001.
C. S. Hau-Riege and Thompson, C. V., Electromigration in Cu interconnects with very different grain structures, Applied Physics Letters, vol. 78, no. 22, pp. 3451 - 3453, 2001.
S. P. Hau-Riege and Thompson, C. V., Experimental characterization and modeling of the reliability of interconnect trees, Journal of Applied Physics, vol. 89, no. 1, pp. 601 - 609, 2001.
C. V. Thompson, Grain growth and evolution of other cellular structures, Solid State Physics: Advances in Research and Applications, Vol 55, vol. 55, pp. 269 - 314, 2001.

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