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J. Michel, PALM, J., Chen, T., Duan, X., Ouellette, E., Ahn, S. H., Nelson, S. F., and Kimerling, L. C., Energy transfer processes at erbium ions in silicon, in Defects in Semiconductors - Icds-19, Pts 1-3, vol. 258-2, G. Davies and Nazare, M. H. 1997, pp. 1485 - 1489.
J. Michel, Zheng, B., PALM, J., Ouellette, E., Gan, F., and Kimerling, L. C., Erbium doped silicon for light emitting devices, in Rare Earth Doped Semiconductors Ii, vol. 422, S. Coffa, Polman, A., and Schwartz, R. N. 1996, pp. 317 - 324.