Publications

Found 8 results
Filters: Author is Zheng, B.  [Clear All Filters]
1996
J. PALM, Gan, F., Zheng, B., Michel, J., and Kimerling, L. C., Electroluminescence of erbium-doped silicon, Physical Review B, vol. 54, no. 24, pp. 17603 - 17615, 1996.
J. Michel, Zheng, B., PALM, J., Ouellette, E., Gan, F., and Kimerling, L. C., Erbium doped silicon for light emitting devices, in Rare Earth Doped Semiconductors Ii, vol. 422, S. Coffa, Polman, A., and Schwartz, R. N. 1996, pp. 317 - 324.
M. Morse, Zheng, B., PALM, J., Duan, X., and Kimerling, L. C., Properties of ion implanted and UHV-CVD grown Si:Er, in Rare Earth Doped Semiconductors Ii, vol. 422, S. Coffa, Polman, A., and Schwartz, R. N. 1996, pp. 41 - 46.
1995
J. Michel, PALM, J., Gan, F., Ren, F. Y. G., Zheng, B., Dunham, S. T., and Kimerling, L. C., Erbium in silicon: A defect system for optoelectronic integrated circuits, in Icds-18 - Proceedings of the 18th International Conference on Defects in Semiconductors, Pts 1-4, vol. 196-, M. Suezawa and KatayamaYoshida, H. 1995, pp. 585 - 589.
1994
J. Michel, REN, F. Y. G., Zheng, B., JACOBSON, D. C., POATE, J. M., and Kimerling, L. C., THE PHYSICS AND APPLICATION OF SIER FOR LIGHT-EMITTING-DIODES, in Proceedings of the 17th International Conference on Defects in Semiconductors, Pts 1-3: Icds-17, vol. 143-, H. Heinrich and Jantsch, W. 1994, pp. 707 - 713.
B. Zheng, Michel, J., REN, F. Y. G., Kimerling, L. C., JACOBSON, D. C., and POATE, J. M., ROOM-TEMPERATURE SHARP LINE ELECTROLUMINESCENCE AT LAMBDA=1.54-MU-M FROM, Applied Physics Letters, vol. 64, no. 21, pp. 2842 - 2844, 1994.