Publications

Found 7 results
Filters: Author is Ahn, S. H.  [Clear All Filters]
1998
T. D. Chen, Agarwal, A. M., Giovane, L. M., Foresi, J. S., Liao, L., Lim, D. R., Morse, M. T., Ouellette, E. J., Ahn, S. H., Duan, X. M., Michel, J., and Kimerling, L. C., “Erbium-doped silicon light emitting devices”, in Light-Emitting Diodes: Research, Manufacturing, and Applications Ii, vol. 3279, E. F. Schubert 1998, pp. 136 - 145.
A. L. Smith, Ahn, S. H., and Kimerling, L. C., A gettering simulator: Polished wafers and p/p(++) epilayers. 1998.
L. M. Giovane, Lim, D. R., Ahn, S. H., Chen, T. D., Foresi, J. S., Liao, L., Oulette, E. J., Agarwal, A. M., Duan, X., Michel, J., Thilderkvist, A., and Kimerling, L. C., “Materials for monolithic silicon microphotonics”, in Materials and Devices for Silicon-Based Optoelectronics, vol. 486, A. Polman, Coffa, S., and Soref, R. 1998, pp. 45 - 56.
1997
S. H. Ahn, PALM, J., Zheng, B., Duan, X., Agarwal, A. M., Nelson, S. F., Michel, J., and Kimerling, L. C., Electrical study of crystalline silicon coimplanted with erbium and oxygen, vol. 3007. 1997.
J. Michel, PALM, J., Chen, T., Duan, X., Ouellette, E., Ahn, S. H., Nelson, S. F., and Kimerling, L. C., “Energy transfer processes at erbium ions in silicon”, in Defects in Semiconductors - Icds-19, Pts 1-3, vol. 258-2, G. Davies and Nazare, M. H. 1997, pp. 1485 - 1489.
S. H. Ahn, Zhao, S., Smith, A. L., Chalfoun, L. L., Platero, M., Nakashima, H., and Kimerling, L. C., “Gettering of Fe by aluminum in p-type Cz silicon”, in Defects in Electronic Materials Ii, vol. 442, J. Michel, Kennedy, T., Wada, K., and Thonke, K. 1997, pp. 169 - 174.
S. Zhao, Smith, A. L., Ahn, S. H., Norga, G. J., Platero, M. T., Nakashima, H., Assali, L. V. C., Michel, J., and Kimerling, L. C., “Iron in p-type silicon: A comprehensive model”, in Defects in Semiconductors - Icds-19, Pts 1-3, vol. 258-2, G. Davies and Nazare, M. H. 1997, pp. 429 - 436.