Publications

Found 9 results
Filters: Author is Assali, L. V. C.  [Clear All Filters]
2003
L. V. C. Assali, Gan, F., Kimerling, L. C., and Justo, J. F., Electronic structure of light emitting centers in Er doped Si, Applied Physics a-Materials Science & Processing, vol. 76, no. 6, pp. 991 - 997, 2003.
2002
S. Zhao, Justo, J. F., Assali, L. V. C., and Kimerling, L. C., Structure and bonding of iron-acceptor pairs in silicon, Brazilian Journal of Physics, vol. 32, no. 2, pp. 418 - 420, 2002.
1998
J. Michel, Assali, L. V. C., Morse, M. T., and Kimerling, L. C., Erbium in silicon, Light Emission in Silicon: From Physics to Devices, vol. 49, pp. 111 - 156, 1998.
1995
F. Gan, Assali, L. V. C., and Kimerling, L. C., Electronic structure of erbium centers in silicon, in Icds-18 - Proceedings of the 18th International Conference on Defects in Semiconductors, Pts 1-4, vol. 196-, M. Suezawa and KatayamaYoshida, H. 1995, pp. 579 - 583.
S. Zhao, Assali, L. V. C., and Kimerling, L. C., The structure and bonding of iron-acceptor pairs in silicon, in Icds-18 - Proceedings of the 18th International Conference on Defects in Semiconductors, Pts 1-4, vol. 196-, M. Suezawa and KatayamaYoshida, H. 1995, pp. 1333 - 1337.