Publications

Found 18 results
Filters: Author is Liu, J. F.  [Clear All Filters]
2005
J. Michel, Liu, J. F., Giziewicz, W., Pan, D., Wada, K., Cannon, D. D., Jongthammanurak, S., Danielson, D. T., Kimerling, L. C., Chen, J., Ilday, F. O., Kartner, F. X., and Yasaitis, J., High performance Ge p-i-n photodetectors on Si. 2005.
J. F. Liu, Michell, J., Cannon, D. D., Giziewicz, W., Pan, D., Danielson, D. T., Jongthammanurak, S., Yasitis, J., Wada, K., Fonstad, C. G., and Kimerling, L. C., High speed Ge photodetectors on Si platform for GHz optical communications in C+L bands, in Progress in Compound Semiconductor Materials IV-Electronic and Optoelectronic Applications, vol. 829, G. J. Brown, Biefeld, R. M., Gmachl, C., Manasreh, M. O., and Unterrainer, K. 2005, pp. 285 - 289.
J. F. Liu, Michel, J., Giziewicz, W., Pan, D., Wada, K., Cannon, D. D., Jongthammanurak, S., Danielson, D. T., Kimerling, L. C., Chen, J., Ilday, F. O., Kartner, F. X., and Yasaitis, J., High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform, Applied Physics Letters, vol. 87, no. 10, 2005.
Y. Ishikawa, Wada, K., Liu, J. F., Cannon, D. D., Luan, H. C., Michel, J., and Kimerling, L. C., Strain-induced enhancement of near-infrared absorption in Ge epitaxial layers grown on Si substrate, Journal of Applied Physics, vol. 98, no. 1, 2005.
J. F. Liu, Cannon, D. D., Wada, K., Ishikawa, Y., Jongthammanurak, S., Danielson, D. T., Michel, J., and Kimerling, L. C., Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications, Applied Physics Letters, vol. 87, no. 1, 2005.
2004
J. F. Liu, Michel, J., Giziewicz, W., Cannon, D. D., Jongthammanurak, S., Danielson, D. T., Pan, D., Yasaitis, J., Wada, K., and Kimerling, L. C., A 20GHz, tensile strained Ge photodetector on Si platform with broad detection spectrum for optical communications and on-chip applications, in 2004 Ieee Leos Annual Meeting Conference Proceedings, Vols 1 and 2, 2004, pp. 150 - 151.
J. F. Liu, Cannon, D. D., Wada, K., Ishikawa, Y., Danielson, D. T., Jongthammanurak, S., Michel, J., and Kimerling, L. C., Deformation potential constants of biaxially tensile stressed Ge epitaxial films on Si(100), Physical Review B, vol. 70, no. 15, 2004.
O. I. Dosunmu, Cannon, D. D., Emsley, M. K., Ghyselen, B., Liu, J. F., Kimerling, L. C., and Unlu, M. S., Resonant cavity enhanced Ge photodetectors for 1550 nm operation on reflecting Si substrates, Ieee Journal of Selected Topics in Quantum Electronics, vol. 10, no. 4, pp. 694 - 701, 2004.
J. F. Liu, Cannon, D. D., Wada, K., Ishikawa, Y., Jongthammanurak, S., Danielson, D. T., Michel, J., and Kimerling, L. C., Silicidation-induced band gap shrinkage in Ge epitaxial films on Si, Applied Physics Letters, vol. 84, no. 5, pp. 660 - 662, 2004.
D. D. Cannon, Liu, J. F., Ishikawa, Y., Wada, K., Danielson, D. T., Jongthammanurak, S., Michel, J., and Kimerling, L. C., Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications, Applied Physics Letters, vol. 84, no. 6, pp. 906 - 908, 2004.