Publications

Found 114 results
Filters: Author is Eugene A. Fitzgerald  [Clear All Filters]
2008
K. P. Chen, Yoon, S. F., Ng, T. K., Tanoto, H., Lew, K. L., Dohrman, C. L., and Fitzgerald, E. A., Characterization of GaAs grown on SiGe/Si graded substrates using p-n junction diodes, Journal of Applied Physics, vol. 104, no. 7, 2008.
J. F. Faelth, Yoon, S. F., Tan, K. H., and Fitzgerald, E. A., The effect of nitrogen pressure during molecular beam epitaxy growth of InAsN quantum dots, Nanotechnology, vol. 19, no. 4, 2008.
H. Tanoto, Yoon, S. F., Loke, W. K., Chen, K. P., Fitzgerald, E. A., Dohrman, C., and Narayanan, B., Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy, Journal of Applied Physics, vol. 103, no. 10, 2008.
J. F. Falth, Yoon, S. F., and Fitzgerald, E. A., The influence of substrate temperature on InAsN quantum dots grown by molecular beam epitaxy, Nanotechnology, vol. 19, no. 45, 2008.
K. L. Lew, Yoon, S. F., Tanoto, H., Chen, K. P., Dohrman, C. L., Isaacson, D. M., and Fitzgerald, E. A., InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer, Electronics Letters, vol. 44, no. 3, pp. 243 - U25, 2008.
D. Lubyshev, Fastenau, J. M., Wu, Y., Liu, W. K., Bulsara, M. T., and Fitzgerald, E. A., MBE GROWTH OF InP-HBT STRUCTURES ON Ge-ON-INSULATOR/Si SUBSTRATES BY MBE, in 2008 Ieee 20th International Conference on Indium Phosphide and Related Materials (iprm), 2008, pp. 411 - 413.
D. Lubyshev, Fastenau, J. M., Wu, Y., Liu, W. K., Bulsara, M. T., Fitzgerald, E. A., and Hoke, W. E., Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates, Journal of Vacuum Science & Technology B, vol. 26, no. 3, pp. 1115 - 1119, 2008.
E. A. Fitzgerald, Bulsara, M. T., Bai, Y., Cheng, C., Liu, W. K., Lubyshev, D., Fastenau, J. M., Wu, Y., Urtega, M., Ha, W., Bergman, J., Brar, B., Drazek, C., Daval, N., Letertre, F., Hoke, W. E., LaRoche, J. R., Herrick, K. J., and Kazior, T. E., Monolithic III-V/Si Integration. 2008.
E. A. Fitzgerald, Bulsara, M. T., Bai, Y., Cheng, C., Liu, W. K., Lubyshev, D., Fastenau, J. M., Wu, Y., Urtega, M., Ha, W., Bergman, J., Brar, B., Drazek, C., Daval, N., Letertre, F., Hoke, W. E., LaRoche, J. R., Herrick, K. J., and Kazior, T. E., Monolithic III-V/Si Integration, in Sige, Ge, and Related Compounds 3: Materials, Processing, and Devices, vol. 16, D. Harame, Caymax, M., Koester, S., Miyazaki, S., Rim, K., Tillack, B., Boquet, J., Cressier, J., Masini, G., Reznicek, A., and Takagi, S. 2008, pp. 1015 - 1020.
H. Tanoto, Yoon, S. F., Ngo, C. Y., Loke, W. K., Dohrman, C., Fitzgerald, E. A., and Narayanan, B., Structural and optical properties of stacked self-assembled InAs/InGaAs quantum dots on graded Si(1)(-)(x)Ge(x)/Si substrate, Applied Physics Letters, vol. 92, no. 21, 2008.
2007
N. J. Quitoriano and Fitzgerald, E. A., Alternative slip system activation in lattice-mismatched InP/InGaAs interfaces, Journal of Applied Physics, vol. 101, no. 7, 2007.
H. Hartono, Soh, C. B., Chua, S. J., and Fitzgerald, E. A., Annihilation of threading dislocations in strain relaxed nano-porous GaN template for high quality GaN growth, in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4 No 7 2007, vol. 4, 2007, pp. 2572 - 2575.
C. B. Soh, Hartono, H., Chow, S. Y., Chua, S. J., and Fitzgerald, E. A., Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth, Applied Physics Letters, vol. 90, no. 5, 2007.
H. P. Yu, Pey, K. L., Choi, W. K., Dawood, M. K., Chew, H. G., Antoniadis, D. A., Fitzgerald, E. A., and Chi, D. Z., The effect of an yttrium interlayer on a ni germanided metal gate workfunction in SiO2/HfO2, Ieee Electron Device Letters, vol. 28, no. 12, pp. 1098 - 1101, 2007.
A. P. Vajpeyi, Chua, S. J., Tripathy, S., and Fitzgerald, E. A., Effect of carrier density on the surface morphology and optical properties of nanoporous GaN prepared by UV assisted electrochemical etching, Applied Physics Letters, vol. 91, no. 8, 2007.
T. Parodos, Fitzgerald, E. A., Caster, A., Tobin, S., Marciniec, J., Welsch, J., Hairston, A., Lamarre, P., Riendeau, J., Woodward, B., Hu, S., Reine, M., and Lovecchio, P., Effect of dislocations on VLWIR HgCdTe photodiodes, Journal of Electronic Materials, vol. 36, no. 8, pp. 1068 - 1076, 2007.
H. Hartono, Soh, C. B., Chua, S. J., and Fitzgerald, E. A., Fabrication and characterization of nano-porous GaN template for strain relaxed GaN growth, Physica Status Solidi B-Basic Solid State Physics, vol. 244, no. 6, pp. 1793 - 1796, 2007.
H. Hartono, Chen, P., Chua, S. J., and Fitzgerald, E. A., Growth of InN and its effect on InGaN epilayer by metalorganic chemical vapor deposition, Thin Solid Films, vol. 515, no. 10, pp. 4408 - 4411, 2007.
K. L. Lew, Yoon, S. F., Loke, W. K., Tanoto, H., Dohrman, C. L., Isaacson, D. M., and Fitzgerald, E. A., High gain AlGaAs/GaAs heterojunction bipolar transistor fabricated on SiGe/Si substrate, Journal of Vacuum Science & Technology B, vol. 25, no. 3, pp. 902 - 905, 2007.
H. Hartono, Soh, C. B., Chua, S. J., and Fitzgerald, E. A., High quality GaN grown from a nanoporous GaN template, Journal of the Electrochemical Society, vol. 154, no. 12, pp. H1004 - H1007, 2007.
H. G. Chew, Zheng, F., Choi, W. K., Chim, W. K., Foo, Y. L., and Fitzgerald, E. A., Influence of reductant and germanium concentration on the growth and stress development of germanium nanocrystals in silicon oxide matrix, Nanotechnology, vol. 18, no. 6, 2007.
H. Hartono, Soh, C. B., Chow, S. Y., Chua, S. J., and Fitzgerald, E. A., Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template, Applied Physics Letters, vol. 90, no. 17, 2007.
A. Chen, Chua, S. J., Xing, G. C., Ji, W., Zhang, X. H., Dong, J. R., Jian, L. K., and Fitzgerald, E. A., Two-dimensional AlGaInP/GaInP photonic crystal membrane lasers operating in the visible regime at room temperature, Applied Physics Letters, vol. 90, no. 1, 2007.

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