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J. Napierala, Martin, D., Buhlmann, H. J., Gradecak, S., and Ilegems, M., GaN laterally overgrown on sapphire by low pressure hydride vapor phase epitaxy, in Silicon Carbide and Related Materials 2003, Prts 1 and 2, vol. 457-460, R. Madar and Camassel, J. 2004, pp. 1581 - 1584.