Publications

Found 5 results
Filters: Author is Lew, K. L.  [Clear All Filters]
2009
H. Tanoto, Yoon, S. F., Lew, K. L., Loke, W. K., Dohrman, C., Fitzgerald, E. A., and Tang, L. J., “Electroluminescence and structural characteristics of InAs/In0.1Ga0.9As quantum dots grown on graded Si1-xGex/Si substrate”, Applied Physics Letters, vol. 95, no. 14, 2009.
K. P. Chen, Yoon, S. F., Ng, T. K., Tanoto, H., Lew, K. L., Dohrman, C. L., and Fitzgerald, E. A., “Study of surface microstructure origin and evolution for GaAs grown on Ge/Si1-xGex/Si substrate”, Journal of Physics D-Applied Physics, vol. 42, no. 3, 2009.
2008
K. P. Chen, Yoon, S. F., Ng, T. K., Tanoto, H., Lew, K. L., Dohrman, C. L., and Fitzgerald, E. A., “Characterization of GaAs grown on SiGe/Si graded substrates using p-n junction diodes”, Journal of Applied Physics, vol. 104, no. 7, 2008.
K. L. Lew, Yoon, S. F., Tanoto, H., Chen, K. P., Dohrman, C. L., Isaacson, D. M., and Fitzgerald, E. A., “InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer”, Electronics Letters, vol. 44, no. 3, pp. 243 - U25, 2008.
2007
K. L. Lew, Yoon, S. F., Loke, W. K., Tanoto, H., Dohrman, C. L., Isaacson, D. M., and Fitzgerald, E. A., “High gain AlGaAs/GaAs heterojunction bipolar transistor fabricated on SiGe/Si substrate”, Journal of Vacuum Science & Technology B, vol. 25, no. 3, pp. 902 - 905, 2007.