Publications
Found 91 results
Filters: Author is Michel, J. [Clear All Filters]
“Erbium doped silicon for light emitting devices”, in Rare Earth Doped Semiconductors Ii, vol. 422, 1996, pp. 317 - 324.
, , “Room temperature emission from erbium nanoparticles embedded in a silicon matrix”, in Surface/Interface and Stress Effects in Electronic Materials Nanostructures, vol. 405, 1996, pp. 265 - 270.
, “Erbium in silicon: A defect system for optoelectronic integrated circuits”, in Icds-18 - Proceedings of the 18th International Conference on Defects in Semiconductors, Pts 1-4, vol. 196-, 1995, pp. 585 - 589.
, “High sensitivity detection of silicon surface reactions by photoconductance decay”, in Icds-18 - Proceedings of the 18th International Conference on Defects in Semiconductors, Pts 1-4, vol. 196-, 1995, pp. 1531 - 1536.
, In-situ wafer contamination detection through RF-PCD measurements, vol. 2638. 1995.
, “MONITORING AND OPTIMIZATION OF SILICON SURFACE QUALITY”, Journal of the Electrochemical Society, vol. 142, no. 8, pp. 2833 - 2835, 1995.
, “SIMULATION AND IN-SITU MONITORING OF METALLIC CONTAMINATION AND SURFACE ROUGHENING IN WET WAFER CLEANING SOLUTIONS”, Materials Science and Technology, vol. 11, no. 1, pp. 90 - 93, 1995.
, “DEFECT MONITORING AND CONTROL FOR CRYSTALLINE SILICON PROCESSING”, in 12th Nrel Photovoltaic Program Review, 1994, pp. 471 - 477.
, “ELECTRONIC PASSIVATION OF SILICON SURFACES BY HALOGENS”, Journal of Electronic Materials, vol. 23, no. 5, pp. 487 - 491, 1994.
, “FLUORINE-ENHANCED SI-ER LIGHT-EMISSION”, in Materials Synthesis and Processing Using Ion Beams, vol. 316, 1994, pp. 493 - 498.
, “THE PHYSICS AND APPLICATION OF SIER FOR LIGHT-EMITTING-DIODES”, in Proceedings of the 17th International Conference on Defects in Semiconductors, Pts 1-3: Icds-17, vol. 143-, 1994, pp. 707 - 713.
, “ROOM-TEMPERATURE SHARP LINE ELECTROLUMINESCENCE AT LAMBDA=1.54-MU-M FROM”, Applied Physics Letters, vol. 64, no. 21, pp. 2842 - 2844, 1994.
, “DOPANT ENHANCEMENT OF THE 1.54 MU-M EMISSION OF ERBIUM IMPLANTED IN SILICON”, in Proceedings of the 16th International Conference on Defects in Semiconductors, Pts 1-3, vol. 83, 1992, pp. 653 - 658.
, “MEASUREMENT OF DEFECT PROFILES IN REACTIVE ION ETCHED SILICON”, Journal of Vacuum Science & Technology B, vol. 10, no. 1, pp. 540 - 543, 1992.
, “PHOTOLUMINESCENCE INVESTIGATIONS OF GRADED, TOTALLY RELAXED GEXSI1-X STRUCTURES”, Journal of Electronic Materials, vol. 21, no. 12, pp. 1099 - 1104, 1992.
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