Publications

Found 91 results
Filters: Author is Michel, J.  [Clear All Filters]
1996
J. Michel, Zheng, B., PALM, J., Ouellette, E., Gan, F., and Kimerling, L. C., “Erbium doped silicon for light emitting devices”, in Rare Earth Doped Semiconductors Ii, vol. 422, S. Coffa, Polman, A., and Schwartz, R. N. 1996, pp. 317 - 324.
L. C. Kimerling, Michel, J., MSAAD, H., and Norga, G. J., Microdefect analysis of silicon: Tools and strategies. 1996.
A. Thilderkvist, Michel, J., Ngiam, S. T., Kimerling, L. C., and Kolenbrander, K. D., “Room temperature emission from erbium nanoparticles embedded in a silicon matrix”, in Surface/Interface and Stress Effects in Electronic Materials Nanostructures, vol. 405, S. M. Prokes, Cammarata, R. C., Wang, K. L., and Christou, A. 1996, pp. 265 - 270.
1995
J. Michel, PALM, J., Gan, F., Ren, F. Y. G., Zheng, B., Dunham, S. T., and Kimerling, L. C., “Erbium in silicon: A defect system for optoelectronic integrated circuits”, in Icds-18 - Proceedings of the 18th International Conference on Defects in Semiconductors, Pts 1-4, vol. 196-, M. Suezawa and KatayamaYoshida, H. 1995, pp. 585 - 589.
G. J. Norga, Black, M. R., Black, K. A., MSAAD, H., Michel, J., and Kimerling, L. C., “High sensitivity detection of silicon surface reactions by photoconductance decay”, in Icds-18 - Proceedings of the 18th International Conference on Defects in Semiconductors, Pts 1-4, vol. 196-, M. Suezawa and KatayamaYoshida, H. 1995, pp. 1531 - 1536.
J. Michel, BLACK, M. R., NORGA, G. J., BLACK, K. A., MSAAD, H., and Kimerling, L. C., In-situ wafer contamination detection through RF-PCD measurements, vol. 2638. 1995.
H. MSAAD, Michel, J., REDDY, A., and Kimerling, L. C., “MONITORING AND OPTIMIZATION OF SILICON SURFACE QUALITY”, Journal of the Electrochemical Society, vol. 142, no. 8, pp. 2833 - 2835, 1995.
G. J. NORGA, BLACK, K. A., MSAAD, H., Michel, J., and Kimerling, L. C., “SIMULATION AND IN-SITU MONITORING OF METALLIC CONTAMINATION AND SURFACE ROUGHENING IN WET WAFER CLEANING SOLUTIONS”, Materials Science and Technology, vol. 11, no. 1, pp. 90 - 93, 1995.
1994
H. MSAAD, NORGA, G. J., Michel, J., and Kimerling, L. C., “DEFECT MONITORING AND CONTROL FOR CRYSTALLINE SILICON PROCESSING”, in 12th Nrel Photovoltaic Program Review, R. Noufi and Ullal, H. S. 1994, pp. 471 - 477.
H. MSAAD, Michel, J., LAPPE, J. J., and Kimerling, L. C., “ELECTRONIC PASSIVATION OF SILICON SURFACES BY HALOGENS”, Journal of Electronic Materials, vol. 23, no. 5, pp. 487 - 491, 1994.
F. Y. G. REN, Michel, J., JACOBSON, D. C., POATE, J. M., and Kimerling, L. C., “FLUORINE-ENHANCED SI-ER LIGHT-EMISSION”, in Materials Synthesis and Processing Using Ion Beams, vol. 316, R. J. Culbertson, Holland, O. W., Jones, K. S., and Maex, K. 1994, pp. 493 - 498.
J. Michel, REN, F. Y. G., Zheng, B., JACOBSON, D. C., POATE, J. M., and Kimerling, L. C., “THE PHYSICS AND APPLICATION OF SIER FOR LIGHT-EMITTING-DIODES”, in Proceedings of the 17th International Conference on Defects in Semiconductors, Pts 1-3: Icds-17, vol. 143-, H. Heinrich and Jantsch, W. 1994, pp. 707 - 713.
B. Zheng, Michel, J., REN, F. Y. G., Kimerling, L. C., JACOBSON, D. C., and POATE, J. M., “ROOM-TEMPERATURE SHARP LINE ELECTROLUMINESCENCE AT LAMBDA=1.54-MU-M FROM”, Applied Physics Letters, vol. 64, no. 21, pp. 2842 - 2844, 1994.
1992
J. Michel, Kimerling, L. C., BENTON, J. L., EAGLESHAM, D. J., Fitzgerald, E. A., JACOBSON, D. C., POATE, J. M., XIE, Y. H., and FERRANTE, R. F., “DOPANT ENHANCEMENT OF THE 1.54 MU-M EMISSION OF ERBIUM IMPLANTED IN SILICON”, in Proceedings of the 16th International Conference on Defects in Semiconductors, Pts 1-3, vol. 83, G. Davies, Deleo, G. G., and Stavola, M. 1992, pp. 653 - 658.
J. L. BENTON, WEIR, B. E., EAGLESHAM, D. J., GOTTSCHO, R. A., Michel, J., and Kimerling, L. C., “MEASUREMENT OF DEFECT PROFILES IN REACTIVE ION ETCHED SILICON”, Journal of Vacuum Science & Technology B, vol. 10, no. 1, pp. 540 - 543, 1992.
J. Michel, Fitzgerald, E. A., XIE, Y. H., SILVERMAN, P. J., Morse, M., and Kimerling, L. C., “PHOTOLUMINESCENCE INVESTIGATIONS OF GRADED, TOTALLY RELAXED GEXSI1-X STRUCTURES”, Journal of Electronic Materials, vol. 21, no. 12, pp. 1099 - 1104, 1992.

Pages