Publications

Found 114 results
Filters: Author is Eugene A. Fitzgerald  [Clear All Filters]
2011
E. A. Fitzgerald, Yang, L., and Cheng, C. - W., III-V/Si Electronics, Dielectrics in Nanosystems -and- Graphene, Ge/Iii-V, Nanowires and Emerging Materials for Post-Cmos Applications 3, vol. 35, no. 3, pp. 345 - 349, 2011.
K. H. Tan, Wicaksono, S., Loke, W. K., Li, D., Yoon, S. F., Fitzgerald, E. A., Ringel, S. A., and Harris, J. S., Molecular beam epitaxy grown GaNAsSb 1 eV photovoltaic cell, Journal of Crystal Growth, vol. 335, no. 1, pp. 66 - 69, 2011.
N. Y. Pacella, Bulsara, M. T., and Fitzgerald, E. A., Si CMOS Contacts to III-V Materials for Monolithic Integration of III-V and Si Devices, in Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications, vol. 35, F. Roozeboom, Kwong, D. L., Timans, P. J., Gusev, E. P., Iwai, H., Ozturk, M. C., and Narayanan, V. 2011, pp. 225 - 229.
2010
M. J. Mori, Boles, S. T., and Fitzgerald, E. A., Comparison of compressive and tensile relaxed composition-graded GaAsP and (Al)InGaP substrates, Journal of Vacuum Science & Technology A, vol. 28, no. 2, pp. 182 - 188, 2010.
G. Mazzeo, Yablonovitch, E., Jiang, H. W., Bai, Y., and Fitzgerald, E. A., Conduction band discontinuity and electron confinement at the SixGe1-x/Ge interface, Applied Physics Letters, vol. 96, no. 21, 2010.
B. S. Ong, Pey, K. L., Ong, C. Y., Tan, C. S., Gan, C. L., Cai, H., Antoniadis, D. A., and Fitzgerald, E. A., Effect of Using Chemical Vapor Deposition WSi2 and Postmetallization Annealing on GaAs Metal-Oxide-Semiconductor Capacitors, Electrochemical and Solid State Letters, vol. 13, no. 9, pp. II328 - II331, 2010.
Y. Bai and Fitzgerald, E. A., Ge/III-V Heterostructures and Their Applications in Fabricating Engineered Substrates, Sige, Ge, and Related Compounds 4: Materials, Processing, and Devices, vol. 33, no. 6, pp. 927 - 932, 2010.
H. Q. Le, Chua, S. J., Koh, Y. W., Loh, K. P., Chen, Z., Thompson, C. V., and Fitzgerald, E. A., Growth of single crystal ZnO nanorods on GaN using an aqueous solution method (Retraction of vol 87, 101908, 2005), Applied Physics Letters, vol. 97, no. 23, 2010.
T. E. Kazior, LaRoche, J. R., Urteaga, M., Bergman, J., Choe, M. J., Lee, K. J., Seong, T., Seo, M., Yen, A., Lubyshev, D., Fastenau, J. M., Liu, W. K., Smith, D., Clark, D., Thompson, R., Bulsara, M. T., Fitzgerald, E. A., Drazek, C., and Guiot, E., High Performance Mixed Signal Circuits Enabled by the Direct Monolithic Heterogeneous Integration of InP HBT and Si CMOS on a Silicon Substrate, in 2010 Ieee Compound Semiconductor Integrated Circuit Symposium (csics), 2010.
P. Sharma, Bulsara, M. T., and Fitzgerald, E. A., High Quality Epitaxial Growth of GaAsyP1-y Alloys on Si1-xGex Virtual Substrates, Sige, Ge, and Related Compounds 4: Materials, Processing, and Devices, vol. 33, no. 6, pp. 843 - 848, 2010.
W. E. Hoke, Kennedy, T. D., LaRoche, J. R., Torabi, A., Bettencourt, J. P., Saledas, P., Lee, C. D., Lyman, P. S., Kazior, T. E., Bulsara, M. T., Fitzgerald, E. A., Lubyshev, D., and Liu, W. K., Molecular beam epitaxial growth and properties of GaAs pseudomorphic high electron mobility transistors on silicon composite substrates, Journal of Vacuum Science & Technology B, vol. 28, no. 3, 2010.
X. Wang, Pey, K. L., Yip, C. H., Fitzgerald, E. A., and Antoniadis, D. A., Vertically arrayed Si nanowire/nanorod-based core-shell p-n junction solar cells, Journal of Applied Physics, vol. 108, no. 12, 2010.
2009
S. T. Boles, Fitzgerald, E. A., Thompson, C. V., Ho, C. K. F., and Pey, K. L., Catalyst proximity effects on the growth rate of Si nanowires, Journal of Applied Physics, vol. 106, no. 4, 2009.
H. G. Chew, Zheng, F., Choi, W. K., Dim, W. K., Fitzgerald, E. A., and Foo, Y. L., Comparison of the Synthesis of Ge Nanocrystals in Hafnium Aluminum Oxide and Silicon Oxide Matrices, Journal of Nanoscience and Nanotechnology, vol. 9, no. 2, pp. 1577 - 1581, 2009.
J. Liu, Sun, X., Bai, Y., Lee, K. E., Fitzgerald, E. A., Kimerling, L. C., and Michel, J., Efficient above-band-gap light emission in germanium, Chinese Optics Letters, vol. 7, no. 4, pp. 271 - 273, 2009.
H. Tanoto, Yoon, S. F., Lew, K. L., Loke, W. K., Dohrman, C., Fitzgerald, E. A., and Tang, L. J., Electroluminescence and structural characteristics of InAs/In0.1Ga0.9As quantum dots grown on graded Si1-xGex/Si substrate, Applied Physics Letters, vol. 95, no. 14, 2009.
T. E. Kazior, LaRoche, J. R., Lubyshev, D., Fastenau, J. M., Liu, W. K., Urteaga, M., Ha, W., Bergman, J., Choe, M. J., Bulsara, M. T., Fitzgerald, E. A., Smith, D., Clark, D., Thompson, R., Drazek, C., Daval, N., Benaissa, L., and Augendre, E., A High Performance Differential Amplifier Through the Direct Monolithic Integration of InP HBTs and Si CMOS on Silicon Substrates, in 2009 Ieee/Mtt-S International Microwave Symposium, Vols 1-3, 2009, pp. 1113 - 1116.
S. T. Boles, Thompson, C. V., and Fitzgerald, E. A., Influence of indium and phosphine on Au-catalyzed InP nanowire growth on Si substrates, Journal of Crystal Growth, vol. 311, no. 5, pp. 1446 - 1450, 2009.
M. J. Mori and Fitzgerald, E. A., Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates, Journal of Applied Physics, vol. 105, no. 1, 2009.
E. A. Fitzgerald, Bulsara, M. T., Bai, Y., Cheng, C., Liu, W. K., Lubyshev, D., Fastenau, J. M., Wu, Y., Urtega, M., Ha, W., Bergman, J., Brar, B., Drazek, C., Daval, N., Letertre, F. D., Hoke, W. E., LaRoche, J. R., Herrick, K. J., and Kazior, T. E., Monolithic III-V/Si Integration, in Graphene and Emerging Materials for Post-Cmos Applications, vol. 19, Y. Obeng, DeGendt, S., Srinivasan, P., Misra, D., Iwai, H., Karim, Z., Hess, D. W., and Grebel, H. 2009, pp. 345 - 350.
W. K. Liu, Lubyshev, D., Fastenau, J. M., Wu, Y., Bulsara, M. T., Fitzgerald, E. A., Urteaga, M., Ha, W., Bergman, J., Brar, B., Hoke, W. E., LaRoche, J. R., Herrick, K. J., Kazior, T. E., Clark, D., Smith, D., Thompson, R. F., Drazek, C., and Daval, N., Monolithic integration of InP-based transistors on Si substrates using MBE, Journal of Crystal Growth, vol. 311, no. 7, pp. 1979 - 1983, 2009.
H. Tanoto, Yoon, S. F., Ng, T. K., Ngo, C. Y., Dohrman, C., Fitzgerald, E. A., Tan, L. H., and Tung, C. H., Origin and suppression of V-shaped defects in the capping of self-assembled InAs quantum dots on graded Si1-xGex/Si substrate, Applied Physics Letters, vol. 95, no. 5, 2009.
T. E. Kazior, LaRoche, J. R., Lubyshev, D., Fastenau, J. M., Liu, W. K., Urteaga, M., Ha, W., Bergman, J., Choe, M. J., Bulsara, M. T., Fitzgerald, E. A., Smith, D., Clark, D., Thompson, R., Drazek, C., Daval, N., Benaissa, L., and Augendre, E., Progress and Challenges in the Direct Monolithic Integration of III-V Devices and Si CMOS on Silicon Substrates, 2009 Ieee 21st International Conference on Indium Phosphide & Related Materials (iprm), pp. 100 - 104, 2009.
K. P. Chen, Yoon, S. F., Ng, T. K., Tanoto, H., Lew, K. L., Dohrman, C. L., and Fitzgerald, E. A., Study of surface microstructure origin and evolution for GaAs grown on Ge/Si1-xGex/Si substrate, Journal of Physics D-Applied Physics, vol. 42, no. 3, 2009.
N. Yang, Bulsara, M. T., Fitzgerald, E. A., Liu, W. K., Lubyshev, D., Fastenau, J. M., Wu, Y., Urteaga, M., Ha, W., Bergman, J., Brar, B., Drazek, C., Daval, N., Benaissa, L., Augendre, E., Hoke, W. E., LaRoche, J. R., Herrick, K. J., and Kazior, T. E., Thermal Considerations for Advanced SOI Substrates Designed for III-V/Si Heterointegration. 2009.

Pages