Publications
Found 18 results
Filters: Author is Bulsara, M. T. [Clear All Filters]
“Effects of dislocation strain on the epitaxy of lattice-mismatched AlGaInP layers”, Journal of Crystal Growth, vol. 392, pp. 74 - 80, 2014.
, “Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate”, Applied Physics Letters, vol. 104, no. 10, 2014.
, “Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates”, Journal of Applied Physics, vol. 113, no. 18, 2013.
, “Controlling Epitaxial GaAsxP1-x/Si1-yGey Heterovalent Interfaces”, Sige, Ge, and Related Compounds 5: Materials, Processing, and Devices, vol. 50, no. 9, pp. 333 - 337, 2012.
, “Effect of Al2O3/InGaAs Interface on Channel Mobility”, Ulsi Process Integration 7, vol. 41, no. 7, pp. 219 - 225, 2011.
, “Si CMOS Contacts to III-V Materials for Monolithic Integration of III-V and Si Devices”, in Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications, vol. 35, 2011, pp. 225 - 229.
, “High Performance Mixed Signal Circuits Enabled by the Direct Monolithic Heterogeneous Integration of InP HBT and Si CMOS on a Silicon Substrate”, in 2010 Ieee Compound Semiconductor Integrated Circuit Symposium (csics), 2010.
, “High Quality Epitaxial Growth of GaAsyP1-y Alloys on Si1-xGex Virtual Substrates”, Sige, Ge, and Related Compounds 4: Materials, Processing, and Devices, vol. 33, no. 6, pp. 843 - 848, 2010.
, “Molecular beam epitaxial growth and properties of GaAs pseudomorphic high electron mobility transistors on silicon composite substrates”, Journal of Vacuum Science & Technology B, vol. 28, no. 3, 2010.
, “A High Performance Differential Amplifier Through the Direct Monolithic Integration of InP HBTs and Si CMOS on Silicon Substrates”, in 2009 Ieee/Mtt-S International Microwave Symposium, Vols 1-3, 2009, pp. 1113 - 1116.
, “Monolithic III-V/Si Integration”, in Graphene and Emerging Materials for Post-Cmos Applications, vol. 19, 2009, pp. 345 - 350.
, “Monolithic integration of InP-based transistors on Si substrates using MBE”, Journal of Crystal Growth, vol. 311, no. 7, pp. 1979 - 1983, 2009.
, “Progress and Challenges in the Direct Monolithic Integration of III-V Devices and Si CMOS on Silicon Substrates”, 2009 Ieee 21st International Conference on Indium Phosphide & Related Materials (iprm), pp. 100 - 104, 2009.
, , “MBE GROWTH OF InP-HBT STRUCTURES ON Ge-ON-INSULATOR/Si SUBSTRATES BY MBE”, in 2008 Ieee 20th International Conference on Indium Phosphide and Related Materials (iprm), 2008, pp. 411 - 413.
, “Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates”, Journal of Vacuum Science & Technology B, vol. 26, no. 3, pp. 1115 - 1119, 2008.
, , “Monolithic III-V/Si Integration”, in Sige, Ge, and Related Compounds 3: Materials, Processing, and Devices, vol. 16, 2008, pp. 1015 - 1020.
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