Publications

Found 18 results
Filters: Author is Bulsara, M. T.  [Clear All Filters]
2014
K. Mukherjee, Beaton, D. A., Mascarenhas, A., Bulsara, M. T., and Fitzgerald, E. A., “Effects of dislocation strain on the epitaxy of lattice-mismatched AlGaInP layers”, Journal of Crystal Growth, vol. 392, pp. 74 - 80, 2014.
K. H. Tan, Loke, W. K., Wicaksono, S., Li, D., Leong, Y. R., Yoon, S. F., Sharma, P., Milakovich, T., Bulsara, M. T., and Fitzgerald, E. A., “Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate”, Applied Physics Letters, vol. 104, no. 10, 2014.
2013
K. Mukherjee, Beaton, D. A., Christian, T., Jones, E. J., Alberi, K., Mascarenhas, A., Bulsara, M. T., and Fitzgerald, E. A., “Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates”, Journal of Applied Physics, vol. 113, no. 18, 2013.
2012
P. Sharma, Milakovich, T., Bulsara, M. T., and Fitzgerald, E. A., “Controlling Epitaxial GaAsxP1-x/Si1-yGey Heterovalent Interfaces”, Sige, Ge, and Related Compounds 5: Materials, Processing, and Devices, vol. 50, no. 9, pp. 333 - 337, 2012.
2011
L. Yang, Cheng, C. W., Bulsara, M. T., and Fitzgerald, E. A., “Effect of Al2O3/InGaAs Interface on Channel Mobility”, Ulsi Process Integration 7, vol. 41, no. 7, pp. 219 - 225, 2011.
N. Y. Pacella, Bulsara, M. T., and Fitzgerald, E. A., “Si CMOS Contacts to III-V Materials for Monolithic Integration of III-V and Si Devices”, in Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications, vol. 35, F. Roozeboom, Kwong, D. L., Timans, P. J., Gusev, E. P., Iwai, H., Ozturk, M. C., and Narayanan, V. 2011, pp. 225 - 229.
2010
T. E. Kazior, LaRoche, J. R., Urteaga, M., Bergman, J., Choe, M. J., Lee, K. J., Seong, T., Seo, M., Yen, A., Lubyshev, D., Fastenau, J. M., Liu, W. K., Smith, D., Clark, D., Thompson, R., Bulsara, M. T., Fitzgerald, E. A., Drazek, C., and Guiot, E., “High Performance Mixed Signal Circuits Enabled by the Direct Monolithic Heterogeneous Integration of InP HBT and Si CMOS on a Silicon Substrate”, in 2010 Ieee Compound Semiconductor Integrated Circuit Symposium (csics), 2010.
P. Sharma, Bulsara, M. T., and Fitzgerald, E. A., “High Quality Epitaxial Growth of GaAsyP1-y Alloys on Si1-xGex Virtual Substrates”, Sige, Ge, and Related Compounds 4: Materials, Processing, and Devices, vol. 33, no. 6, pp. 843 - 848, 2010.
W. E. Hoke, Kennedy, T. D., LaRoche, J. R., Torabi, A., Bettencourt, J. P., Saledas, P., Lee, C. D., Lyman, P. S., Kazior, T. E., Bulsara, M. T., Fitzgerald, E. A., Lubyshev, D., and Liu, W. K., “Molecular beam epitaxial growth and properties of GaAs pseudomorphic high electron mobility transistors on silicon composite substrates”, Journal of Vacuum Science & Technology B, vol. 28, no. 3, 2010.
2009
T. E. Kazior, LaRoche, J. R., Lubyshev, D., Fastenau, J. M., Liu, W. K., Urteaga, M., Ha, W., Bergman, J., Choe, M. J., Bulsara, M. T., Fitzgerald, E. A., Smith, D., Clark, D., Thompson, R., Drazek, C., Daval, N., Benaissa, L., and Augendre, E., “A High Performance Differential Amplifier Through the Direct Monolithic Integration of InP HBTs and Si CMOS on Silicon Substrates”, in 2009 Ieee/Mtt-S International Microwave Symposium, Vols 1-3, 2009, pp. 1113 - 1116.
E. A. Fitzgerald, Bulsara, M. T., Bai, Y., Cheng, C., Liu, W. K., Lubyshev, D., Fastenau, J. M., Wu, Y., Urtega, M., Ha, W., Bergman, J., Brar, B., Drazek, C., Daval, N., Letertre, F. D., Hoke, W. E., LaRoche, J. R., Herrick, K. J., and Kazior, T. E., “Monolithic III-V/Si Integration”, in Graphene and Emerging Materials for Post-Cmos Applications, vol. 19, Y. Obeng, DeGendt, S., Srinivasan, P., Misra, D., Iwai, H., Karim, Z., Hess, D. W., and Grebel, H. 2009, pp. 345 - 350.
W. K. Liu, Lubyshev, D., Fastenau, J. M., Wu, Y., Bulsara, M. T., Fitzgerald, E. A., Urteaga, M., Ha, W., Bergman, J., Brar, B., Hoke, W. E., LaRoche, J. R., Herrick, K. J., Kazior, T. E., Clark, D., Smith, D., Thompson, R. F., Drazek, C., and Daval, N., “Monolithic integration of InP-based transistors on Si substrates using MBE”, Journal of Crystal Growth, vol. 311, no. 7, pp. 1979 - 1983, 2009.
T. E. Kazior, LaRoche, J. R., Lubyshev, D., Fastenau, J. M., Liu, W. K., Urteaga, M., Ha, W., Bergman, J., Choe, M. J., Bulsara, M. T., Fitzgerald, E. A., Smith, D., Clark, D., Thompson, R., Drazek, C., Daval, N., Benaissa, L., and Augendre, E., “Progress and Challenges in the Direct Monolithic Integration of III-V Devices and Si CMOS on Silicon Substrates”, 2009 Ieee 21st International Conference on Indium Phosphide & Related Materials (iprm), pp. 100 - 104, 2009.
N. Yang, Bulsara, M. T., Fitzgerald, E. A., Liu, W. K., Lubyshev, D., Fastenau, J. M., Wu, Y., Urteaga, M., Ha, W., Bergman, J., Brar, B., Drazek, C., Daval, N., Benaissa, L., Augendre, E., Hoke, W. E., LaRoche, J. R., Herrick, K. J., and Kazior, T. E., Thermal Considerations for Advanced SOI Substrates Designed for III-V/Si Heterointegration. 2009.
2008
D. Lubyshev, Fastenau, J. M., Wu, Y., Liu, W. K., Bulsara, M. T., and Fitzgerald, E. A., “MBE GROWTH OF InP-HBT STRUCTURES ON Ge-ON-INSULATOR/Si SUBSTRATES BY MBE”, in 2008 Ieee 20th International Conference on Indium Phosphide and Related Materials (iprm), 2008, pp. 411 - 413.
D. Lubyshev, Fastenau, J. M., Wu, Y., Liu, W. K., Bulsara, M. T., Fitzgerald, E. A., and Hoke, W. E., “Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates”, Journal of Vacuum Science & Technology B, vol. 26, no. 3, pp. 1115 - 1119, 2008.
E. A. Fitzgerald, Bulsara, M. T., Bai, Y., Cheng, C., Liu, W. K., Lubyshev, D., Fastenau, J. M., Wu, Y., Urtega, M., Ha, W., Bergman, J., Brar, B., Drazek, C., Daval, N., Letertre, F., Hoke, W. E., LaRoche, J. R., Herrick, K. J., and Kazior, T. E., Monolithic III-V/Si Integration. 2008.
E. A. Fitzgerald, Bulsara, M. T., Bai, Y., Cheng, C., Liu, W. K., Lubyshev, D., Fastenau, J. M., Wu, Y., Urtega, M., Ha, W., Bergman, J., Brar, B., Drazek, C., Daval, N., Letertre, F., Hoke, W. E., LaRoche, J. R., Herrick, K. J., and Kazior, T. E., “Monolithic III-V/Si Integration”, in Sige, Ge, and Related Compounds 3: Materials, Processing, and Devices, vol. 16, D. Harame, Caymax, M., Koester, S., Miyazaki, S., Rim, K., Tillack, B., Boquet, J., Cressier, J., Masini, G., Reznicek, A., and Takagi, S. 2008, pp. 1015 - 1020.