Publications

Found 17 results
Filters: Author is Sadana, Devendra K.  [Clear All Filters]
2010
J. Kim, Bedell, S. W., and Sadana, D. K., > 10(20) cm(-3) n-doping in Ge by Sb/P Co-implants: n(+)/p Diodes with Improved Rectification, in Sige, Ge, and Related Compounds 4: Materials, Processing, and Devices, vol. 33, D. Harame, Ostling, M., Masini, G., Krishnamohan, T., Bedell, S., Reznicek, A., Boquet, J., Yeo, Y. C., Caymax, M., Tillack, B., Miyazaki, S., and Koester, S. 2010, pp. 201 - 204.
J. Kim, Bedell, S. W., and Sadana, D. K., > 10(20) cm(-3) n-doping in Ge by Sb/P Co-implants: n(+)/p Diodes with Improved Rectification, in Sige, Ge, and Related Compounds 4: Materials, Processing, and Devices, vol. 33, D. Harame, Ostling, M., Masini, G., Krishnamohan, T., Bedell, S., Reznicek, A., Boquet, J., Yeo, Y. C., Caymax, M., Tillack, B., Miyazaki, S., and Koester, S. 2010, pp. 201 - 204.
J. Kim, Bedell, S. W., Maurer, S. L., Loesing, R., and Sadana, D. K., Activation of Implanted n-Type Dopants in Ge Over the Active Concentration of 1 X 10(20) cm(-3) Using Coimplantation of Sb and P, Electrochemical and Solid State Letters, vol. 13, no. 1, pp. II12 - II15, 2010.
J. Kim, Inns, D., and Sadana, D. K., Cracking behavior of evaporated amorphous silicon films, Thin Solid Films, vol. 518, no. 17, pp. 4908 - 4910, 2010.
J. Kim, Inns, D., and Sadana, D. K., Investigation on critical failure thickness of hydrogenated/nonhydrogenated amorphous silicon films, Journal of Applied Physics, vol. 107, no. 7, p. 073507, 2010.
J. Kim, Abou-Kandil, A., Fogel, K., Hovel, H., and Sadana, D. K., The Role of High Work-Function Metallic Nanodots on the Performance of a-Si:H Solar Cells: Offering Ohmic Contact to Light Trapping, Acs Nano, vol. 4, no. 12, pp. 7331 - 7336, 2010.
J. Kim, Inns, D., Fogel, K., and Sadana, D. K., Surface texturing of single-crystalline silicon solar cells using low density SiO2 films as an anisotropic etch mask, Solar Energy Materials and Solar Cells, vol. 94, no. 12, pp. 2091 - 2093, 2010.