Publications

Found 91 results
Filters: Author is Michel, J.  [Clear All Filters]
1999
V. V. Emtsev, Emtsev, V. V., Poloskin, D. S., Sobolev, N. A., Shek, E. I., Michel, J., and Kimerling, L. C., Impurity centers in silicon doped with rare-earth impurities of dysprosium, holmium, erbium, and ytterbium, Semiconductors, vol. 33, no. 6, pp. 603 - 605, 1999.
V. V. Emtsev, Emtsev, V. V., Poloskin, D. S., Shek, E. I., Sobolev, N. A., Michel, J., and Kimerling, L. C., Impurity effects in silicon implanted with rare-earth ions, Physica B-Condensed Matter, vol. 273-4, pp. 346 - 349, 1999.
V. V. Emtsev, Emtsev, V. V., Poloskin, D. S., Shek, E. I., Sobolev, N. A., Michel, J., and Kimerling, L. C., Oxygen and Erbium related donor centers in Czochralski grown silicon implanted with erbium, Semiconductors, vol. 33, no. 10, pp. 1084 - 1087, 1999.
K. Wada, Chen, T., Michel, J., Kimerling, L. C., Aga, H., Mitani, K., Abe, T., and Suezawa, M., Photonic bandgap formation by wafer bonding and delamination, in Iii-V and Iv-Iv Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics, vol. 535, S. A. Ringel, Fitzgerald, E. A., Adesida, I., and Houghton, D. C. 1999, pp. 121 - 126.
V. V. Emtsev, Emtsev, V. V., Poloskin, D. S., Shek, E. I., Sobolev, N. A., Michel, J., and Kimerling, L. C., Rare earth impurities and impurity-related centers in silicon, Solid State Phenomena, vol. 70, pp. 365 - 370, 1999.
T. D. Chen, Platero, M., Opher-Lipson, M., PALM, J., Michel, J., and Kimerling, L. C., The temperature dependence of radiative and nonradiative processes at Er-O centers in Si, Physica B-Condensed Matter, vol. 273-4, pp. 322 - 325, 1999.
1998
G. J. Norga, Platero, M., Black, K. A., Reddy, A. J., Michel, J., and Kimerling, L. C., Detection of metallic contaminants on silicon by surface sensitive minority carrier lifetime measurements, Journal of the Electrochemical Society, vol. 145, no. 7, pp. 2602 - 2607, 1998.
Y. Fink, Winn, J. N., Fan, S. H., Chen, C. P., Michel, J., Joannopoulos, J. D., and Thomas, E. L., A dielectric omnidirectional reflector, Science, vol. 282, no. 5394, pp. 1679 - 1682, 1998.
J. Michel, Assali, L. V. C., Morse, M. T., and Kimerling, L. C., Erbium in silicon, Light Emission in Silicon: From Physics to Devices, vol. 49, pp. 111 - 156, 1998.
T. D. Chen, Agarwal, A. M., Giovane, L. M., Foresi, J. S., Liao, L., Lim, D. R., Morse, M. T., Ouellette, E. J., Ahn, S. H., Duan, X. M., Michel, J., and Kimerling, L. C., Erbium-doped silicon light emitting devices, in Light-Emitting Diodes: Research, Manufacturing, and Applications Ii, vol. 3279, E. F. Schubert 1998, pp. 136 - 145.
T. Gregorkiewicz, Thao, D. T. X., Tsimperidis, I., Bekman, H. H. P. T., Langerak, C. J. G. M., Michel, J., and Kimerling, L. C., Excitation mechanism of Er in Si studied with a free-electron laser, Journal of Luminescence, vol. 80, no. 1-4, pp. 291 - 295, 1998.
L. M. Giovane, Lim, D. R., Ahn, S. H., Chen, T. D., Foresi, J. S., Liao, L., Oulette, E. J., Agarwal, A. M., Duan, X., Michel, J., Thilderkvist, A., and Kimerling, L. C., Materials for monolithic silicon microphotonics, in Materials and Devices for Silicon-Based Optoelectronics, vol. 486, A. Polman, Coffa, S., and Soref, R. 1998, pp. 45 - 56.
1997
X. Duan, PALM, J., Zheng, B., Morse, M., Michel, J., and Kimerling, L. C., Defects in erbium/oxygen implanted silicon, in Defects in Electronic Materials Ii, vol. 442, J. Michel, Kennedy, T., Wada, K., and Thonke, K. 1997, pp. 249 - 254.
X. Duan, PALM, J., Zheng, B., Morse, M., Michel, J., and Kimerling, L. C., Defects in erbium/oxygen implanted silicon, in Defects in Electronic Materials Ii, vol. 442, J. Michel, Kennedy, T., Wada, K., and Thonke, K. 1997, pp. 249 - 254.
S. H. Ahn, PALM, J., Zheng, B., Duan, X., Agarwal, A. M., Nelson, S. F., Michel, J., and Kimerling, L. C., Electrical study of crystalline silicon coimplanted with erbium and oxygen, vol. 3007. 1997.
J. Michel, PALM, J., Chen, T., Duan, X., Ouellette, E., Ahn, S. H., Nelson, S. F., and Kimerling, L. C., Energy transfer processes at erbium ions in silicon, in Defects in Semiconductors - Icds-19, Pts 1-3, vol. 258-2, G. Davies and Nazare, M. H. 1997, pp. 1485 - 1489.
S. H. Ahn, Zhao, S., Smith, A. L., Chalfoun, L. L., Platero, M., Nakashima, H., and Kimerling, L. C., Gettering of Fe by aluminum in p-type Cz silicon, in Defects in Electronic Materials Ii, vol. 442, J. Michel, Kennedy, T., Wada, K., and Thonke, K. 1997, pp. 169 - 174.
J. Michel, Reddy, A. J., Norga, G. J., Platero, M., and Kimerling, L. C., In-situ determination of Si wafer contamination using photoconductance decay measurements, vol. 97. 1997.
A. J. Reddy, Norga, G. J., Park, A. S., Smith, A. L., Michel, J., Kimerling, L. C., Parekh, B., Shyu, J. H., and Deane, E., In-situ monitoring of HF reprocessing in an industrial scale recirculator bath, in Environmental, Safety, and Health Issues in Ic Production, vol. 447, R. Reif, Heyns, M., Bowling, A., and Tonti, A. 1997, pp. 3 - 8.
S. Zhao, Agarwal, A. M., Benton, J. L., Gilmer, G. H., and Kimerling, L. C., Interstitial defect reactions in silicon, in Defects in Electronic Materials Ii, vol. 442, J. Michel, Kennedy, T., Wada, K., and Thonke, K. 1997, pp. 231 - 236.
S. Zhao, Smith, A. L., Ahn, S. H., Norga, G. J., Platero, M. T., Nakashima, H., Assali, L. V. C., Michel, J., and Kimerling, L. C., Iron in p-type silicon: A comprehensive model, in Defects in Semiconductors - Icds-19, Pts 1-3, vol. 258-2, G. Davies and Nazare, M. H. 1997, pp. 429 - 436.
L. C. Kimerling, Kolenbrander, K. D., Michel, J., and PALM, J., Light emission from silicon, in Solid State Physics - Advances in Research and Applications, Vol 50, vol. 50, H. Ehrenreich and Spaepen, F. 1997, pp. 333 - 381.
G. J. Norga, Platero, M., Black, K. A., Reddy, A. J., Michel, J., and Kimerling, L. C., Mechanism of copper deposition on silicon from dilute hydrofluoric acid solution, Journal of the Electrochemical Society, vol. 144, no. 8, pp. 2801 - 2810, 1997.
A. J. Reddy, Burr, T. A., Chan, J. K., Norga, G. J., Michel, J., and Kimerling, L. C., Silicon surface defects: The roles of passivation and surface contamination, in Defects in Semiconductors - Icds-19, Pts 1-3, vol. 258-2, G. Davies and Nazare, M. H. 1997, pp. 1719 - 1724.
1996
J. PALM, Gan, F., Zheng, B., Michel, J., and Kimerling, L. C., Electroluminescence of erbium-doped silicon, Physical Review B, vol. 54, no. 24, pp. 17603 - 17615, 1996.

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