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H. A. ATWATER, Thompson, C. V., and KIM, H. J., THE ROLE OF POINT-DEFECTS IN ION-BOMBARDMENT-ENHANCED AND DOPANT-ENHANCED GRAIN-GROWTH IN SILICON THIN-FILMS, Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, vol. 39, no. 1-4, pp. 64 - 67, 1989.
H. A. ATWATER, SMITH, H. I., and Thompson, C. V., LOW-TEMPERATURE ION-BEAM ENHANCED GRAIN-GROWTH IN THIN-FILMS, Journal of Electronic Materials, vol. 16, no. 4, pp. A7 - A7, 1987.