Publications

Found 372 results
Filters: Author is Carl V. Thompson  [Clear All Filters]
1990
E. MA, CLEVENGER, L. A., Thompson, C. V., DEAVILLEZ, R. R., and TU, K. N., STRUCTURAL TRANSITIONS IN TITANIUM AMORPHOUS-SILICON MULTILAYERS, in Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures, vol. 163, D. J. Wolford, Bernhols, J., and Haller, E. E. 1990, pp. 961 - 964.
1989
F. Spaepen and Thompson, C. V., CALORIMETRIC STUDIES OF REACTIONS IN THIN-FILMS AND MULTILAYERS, Applied Surface Science, vol. 38, no. 1-4, pp. 1 - 12, 1989.
J. M. PHILLIPS, PALMER, J. E., HECKER, N. E., and Thompson, C. V., THE EFFECT OF ANNEALING ON THE STRUCTURE OF EPITAXIAL CAF2 FILMS ON SI(100), vol. 148. 1989.
J. E. PALMER, BURNS, G., FONSTAD, C. G., and Thompson, C. V., EFFECT OF AS4 OVERPRESSURE ON INITIAL GROWTH OF GALLIUM-ARSENIDE ON SILICON BY MOLECULAR-BEAM EPITAXY, Applied Physics Letters, vol. 55, no. 10, pp. 990 - 992, 1989.
K. R. COFFEY, CLEVENGER, L. A., Barmak, K., RUDMAN, D. A., and Thompson, C. V., EXPERIMENTAL-EVIDENCE FOR NUCLEATION DURING THIN-FILM REACTIONS, Applied Physics Letters, vol. 55, no. 9, pp. 852 - 854, 1989.
P. G. BLAUNER, BUTT, Y., RO, J. S., Thompson, C. V., and MELNGAILIS, J., FOCUSED ION-BEAM INDUCED DEPOSITION OF LOW-RESISTIVITY GOLD-FILMS, Journal of Vacuum Science & Technology B, vol. 7, no. 6, pp. 1816 - 1818, 1989.
J. CHO and Thompson, C. V., GRAIN-SIZE DEPENDENCE OF ELECTROMIGRATION-INDUCED FAILURES IN NARROW INTERCONNECTS, Applied Physics Letters, vol. 54, no. 25, pp. 2577 - 2579, 1989.
L. A. CLEVENGER, Thompson, C. V., DEAVILLEZ, R. R., and TU, K. N., KINETICS AND THERMODYNAMICS OF AMORPHOUS SILICIDE FORMATION IN NICKEL AMORPHOUS-SILICON MULTILAYER THIN-FILMS, vol. 148. 1989.
P. G. BLAUNER, RO, J. S., BUTT, Y., Thompson, C. V., and MELNGAILIS, J., THE MICROSTRUCTURE OF GOLD-FILMS WRITTEN BY FOCUSED ION-BEAM INDUCED DEPOSITION, vol. 129. 1989.
R. R. DEAVILLEZ, CLEVENGER, L. A., and Thompson, C. V., RELAXATION PHENOMENA IN EVAPORATED AMORPHOUS-SILICON FILMS, Journal of Materials Research, vol. 4, no. 5, pp. 1057 - 1059, 1989.
H. A. ATWATER, Thompson, C. V., and KIM, H. J., THE ROLE OF POINT-DEFECTS IN ION-BOMBARDMENT-ENHANCED AND DOPANT-ENHANCED GRAIN-GROWTH IN SILICON THIN-FILMS, Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, vol. 39, no. 1-4, pp. 64 - 67, 1989.
C. V. Thompson, JENKINS, R. A., and HIGGINS, C. E., A THERMAL-DESORPTION METHOD FOR THE DETERMINATION OF NICOTINE IN INDOOR ENVIRONMENTS, Environmental Science & Technology, vol. 23, no. 4, pp. 429 - 435, 1989.
1988
H. J. FROST, Thompson, C. V., HOWE, C. L., and WHANG, J. H., A 2-DIMENSIONAL COMPUTER-SIMULATION OF CAPILLARITY-DRIVEN GRAIN-GROWTH - PRELIMINARY-RESULTS, Scripta Metallurgica, vol. 22, no. 1, pp. 65 - 70, 1988.
C. V. Thompson, COARSENING OF PARTICLES ON A PLANAR SUBSTRATE - INTERFACE ENERGY ANISOTROPY AND APPLICATION TO GRAIN-GROWTH IN THIN-FILMS, Acta Metallurgica, vol. 36, no. 11, pp. 2929 - 2934, 1988.
H. J. FROST and Thompson, C. V., COMPUTER-SIMULATION OF MICROSTRUCTURAL EVOLUTION IN THIN-FILMS, Journal of Electronic Materials, vol. 17, no. 5, pp. 447 - 458, 1988.
P. G. BLAUNER, RO, J. S., BUTT, Y., Thompson, C. V., and MELNGAILIS, J., FOCUSED ION-BEAM FABRICATION OF SUB-MICRON GOLD STRUCTURES, Journal of the Electrochemical Society, vol. 135, no. 11, pp. C538 - C538, 1988.
H. A. ATWATER, Thompson, C. V., and SMITH, H. I., INTERFACE-LIMITED GRAIN-BOUNDARY MOTION DURING ION-BOMBARDMENT, Physical Review Letters, vol. 60, no. 2, pp. 112 - 115, 1988.
J. S. RO, DUBNER, A. D., Thompson, C. V., and MELNGAILIS, J., ION INDUCED DEPOSITION OF GOLD-FILMS, Journal of Vacuum Science & Technology B, vol. 6, no. 3, pp. 1043 - 1043, 1988.
H. A. ATWATER, Thompson, C. V., and SMITH, H. I., ION-BOMBARDMENT-ENHANCED GRAIN-GROWTH IN GERMANIUM, SILICON, AND GOLD THIN-FILMS, Journal of Applied Physics, vol. 64, no. 5, pp. 2337 - 2353, 1988.
H. J. KIM and Thompson, C. V., KINETIC MODELING OF GRAIN-GROWTH IN POLYCRYSTALLINE SILICON FILMS DOPED WITH PHOSPHORUS OR BORON, Journal of the Electrochemical Society, vol. 135, no. 9, pp. 2312 - 2319, 1988.
H. A. ATWATER, Thompson, C. V., and SMITH, H. I., MECHANISMS FOR CRYSTALLOGRAPHIC ORIENTATION IN THE CRYSTALLIZATION OF THIN SILICON FILMS FROM THE MELT, Journal of Materials Research, vol. 3, no. 6, pp. 1232 - 1237, 1988.
H. A. ATWATER and Thompson, C. V., POINT-DEFECT ENHANCED GRAIN-GROWTH IN SILICON THIN-FILMS - THE ROLE OF ION-BOMBARDMENT AND DOPANTS, Applied Physics Letters, vol. 53, no. 22, pp. 2155 - 2157, 1988.
L. A. CLEVENGER, Thompson, C. V., CAMMARATA, R. C., and TU, K. N., REACTION-KINETICS OF NICKEL SILICON MULTILAYER FILMS, Applied Physics Letters, vol. 52, no. 10, pp. 795 - 797, 1988.

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