Publications

Found 2 results
Filters: Author is Tan, C. S.  [Clear All Filters]
2011
B. S. Ong, Pey, K. L., Ong, C. Y., Tan, C. S., Antoniadis, D. A., and Fitzgerald, E. A., “Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors”, Applied Physics Letters, vol. 98, no. 18, 2011.
2010
B. S. Ong, Pey, K. L., Ong, C. Y., Tan, C. S., Gan, C. L., Cai, H., Antoniadis, D. A., and Fitzgerald, E. A., “Effect of Using Chemical Vapor Deposition WSi2 and Postmetallization Annealing on GaAs Metal-Oxide-Semiconductor Capacitors”, Electrochemical and Solid State Letters, vol. 13, no. 9, pp. II328 - II331, 2010.