Found 7 results
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G. Romano and Grossman, J. C., Phonon bottleneck identification in disordered nanoporous materials, Physical Review B, vol. 96, no. 11, p. 115425, 2017.
G. Hyun Kim, Ma, W., Yildiz, B., and Thompson, C. V., Effect of annealing ambient on anisotropic retraction of film edges during solid-state dewetting of thin single crystal films, Journal of Applied Physics, vol. 120, no. 7, p. 075306, 2016.
X. Ding, Liu, X. X., Huang, Y., Zhang, X., Zhao, Q., Xiang, X., Li, G., He, P., Wen, Z., Li, J., and Huang, Y., Enhanced electrochemical performance promoted by monolayer graphene and void space in silicon composite anode materials, Nano Energy, vol. 27, pp. 647 - 657, 2016.
D. Kohen, Nguyen, X. Sang, Yadav, S., Kumar, A., Made, R. I., Heidelberger, C., Gong, X., Lee, K. Hong, Lee, K. Eng Kian, Yeo, Y. Chia, Yoon, S. Fatt, and Fitzgerald, E. A., Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer, Aip Advances, vol. 6, no. 8, p. 085106, 2016.
R. V. Zucker, Kim, G. Hyun, Ye, J., Carter, W. Craig, and Thompson, C. V., The mechanism of corner instabilities in single-crystal thin films during dewetting, Journal of Applied Physics, vol. 119, no. 12, p. 125306, 2016.
K. E. Lee and Fitzgerald, E. A., Metamorphic transistors: Building blocks for hetero-integrated circuits, Mrs Bulletin, vol. 41, no. 3, pp. 210 - 217, 2016.
K. Hong Lee, Bao, S., Wang, B., Wang, C., Yoon, S. Fatt, Michel, J., Fitzgerald, E. A., and Tan, C. Seng, Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer, Aip Advances, vol. 6, no. 2, p. 025028, 2016.