Publications
Found 5 results
Filters: Author is Ostling, M. [Clear All Filters]
“> 10(20) cm(-3) n-doping in Ge by Sb/P Co-implants: n(+)/p Diodes with Improved Rectification”, in Sige, Ge, and Related Compounds 4: Materials, Processing, and Devices, vol. 33, 2010, pp. 201 - 204.
, “> 10(20) cm(-3) n-doping in Ge by Sb/P Co-implants: n(+)/p Diodes with Improved Rectification”, in Sige, Ge, and Related Compounds 4: Materials, Processing, and Devices, vol. 33, 2010, pp. 201 - 204.
, “Band-Engineered Ge-on-Si Lasers for Integrated Photonics”, Sige, Ge, and Related Compounds 4: Materials, Processing, and Devices, vol. 33, no. 6, pp. 539 - 543, 2010.
, “Ge/III-V Heterostructures and Their Applications in Fabricating Engineered Substrates”, Sige, Ge, and Related Compounds 4: Materials, Processing, and Devices, vol. 33, no. 6, pp. 927 - 932, 2010.
, “High Quality Epitaxial Growth of GaAsyP1-y Alloys on Si1-xGex Virtual Substrates”, Sige, Ge, and Related Compounds 4: Materials, Processing, and Devices, vol. 33, no. 6, pp. 843 - 848, 2010.
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