Publications

Found 5 results
Filters: Author is Ostling, M.  [Clear All Filters]
2010
J. Kim, Bedell, S. W., and Sadana, D. K., “> 10(20) cm(-3) n-doping in Ge by Sb/P Co-implants: n(+)/p Diodes with Improved Rectification”, in Sige, Ge, and Related Compounds 4: Materials, Processing, and Devices, vol. 33, D. Harame, Ostling, M., Masini, G., Krishnamohan, T., Bedell, S., Reznicek, A., Boquet, J., Yeo, Y. C., Caymax, M., Tillack, B., Miyazaki, S., and Koester, S. 2010, pp. 201 - 204.
J. Kim, Bedell, S. W., and Sadana, D. K., “> 10(20) cm(-3) n-doping in Ge by Sb/P Co-implants: n(+)/p Diodes with Improved Rectification”, in Sige, Ge, and Related Compounds 4: Materials, Processing, and Devices, vol. 33, D. Harame, Ostling, M., Masini, G., Krishnamohan, T., Bedell, S., Reznicek, A., Boquet, J., Yeo, Y. C., Caymax, M., Tillack, B., Miyazaki, S., and Koester, S. 2010, pp. 201 - 204.
J. Liu, Sun, X., Camacho-Aguilera, R., Kimerling, L. C., and Michel, J., “Band-Engineered Ge-on-Si Lasers for Integrated Photonics”, Sige, Ge, and Related Compounds 4: Materials, Processing, and Devices, vol. 33, no. 6, pp. 539 - 543, 2010.
Y. Bai and Fitzgerald, E. A., “Ge/III-V Heterostructures and Their Applications in Fabricating Engineered Substrates”, Sige, Ge, and Related Compounds 4: Materials, Processing, and Devices, vol. 33, no. 6, pp. 927 - 932, 2010.
P. Sharma, Bulsara, M. T., and Fitzgerald, E. A., “High Quality Epitaxial Growth of GaAsyP1-y Alloys on Si1-xGex Virtual Substrates”, Sige, Ge, and Related Compounds 4: Materials, Processing, and Devices, vol. 33, no. 6, pp. 843 - 848, 2010.