Synthesis of High-Quality Large-Area Homogenous 1T ' MoTe2 from Chemical Vapor Deposition

TitleSynthesis of High-Quality Large-Area Homogenous 1T ' MoTe2 from Chemical Vapor Deposition
Publication TypeJournal Article
Year of Publication2016
AuthorsZhou, L, Zubair, A, Wang, Z, Zhang, X, Ouyang, F, Xu, K, Fang, W, Ueno, K, Li, J, Palacios, T, Kong, J, Dresselhaus, MS
JournalAdvanced Materials
Volume28
Issue43
Pagination9526 - +
Date Published2016/11/16/
ISBN Number0935-9648
Keywordsfew-layer mote2, monolayers, nanosheets, transistors, transition-metal dichalcogenides
Abstract

High-quality large-area few-layer 1T' MoTe2 films with high homogeneity are synthesized by the controlled tellurization of MoO3 film. The Mo precursor plays a key role in determining the quality and morphology of the 1T' MoTe2. Furthermore, the amount of Te strongly influences the phase of the MoTe2. The growth method paves the way toward the scalable production of 1T' MoTe2-based applications.

Short TitleAdv. Mater.