|Title||The study of radiation effects in emerging micro and nano electro mechanical systems (M and NEMs)|
|Publication Type||Journal Article|
|Year of Publication||2017|
|Authors||Arutt, CN, Alles, ML, Liao, W, Gong, H, Davidson, JL, Schrimpf, RD, Reed, RA, Weller, RA, Bolotin, K, Nicholl, R, Pham, TToan, Zettl, A, Qingyang, D, Hu, J, Li, M, Alphenaar, BW, Lin, J-T, Shurva, PDeb, McNamara, S, Walsh, KM, Feng, PX-L, Hutin, L, Ernst, T, Homeijer, BD, Polcawich, RG, Proie, RM, Jones, JL, Glaser, ER, Cress, CD, Bassiri-Gharb, N|
|Journal||Semiconductor Science and Technology|
|Keywords||2D materials, devices, elastic properties, graphene, ionizing-radiation, logic relays, mems, mems accelerometers, microelectromechanical systems, micromachined cantilevers, nems, radiation effects, silicon, silicon carbide (SiC), switches, transducers|
The potential of micro and nano electromechanical systems (M and NEMS) has expanded due to advances in materials and fabrication processes. A wide variety of materials are now being pursued and deployed for M and NEMS including silicon carbide (SiC), III-V materials, thinfilm piezoelectric and ferroelectric, electro-optical and 2D atomic crystals such as graphene, hexagonal boron nitride (h-BN), and molybdenum disulfide (MoS2). The miniaturization, functionality and low-power operation offered by these types of devices are attractive for many application areas including physical sciences, medical, space and military uses, where exposure to radiation is a reliability consideration. Understanding the impact of radiation on these materials and devices is necessary for applications in radiation environments.
|Short Title||Semicond. Sci. Technol.|