The study of radiation effects in emerging micro and nano electro mechanical systems (M and NEMs)

TitleThe study of radiation effects in emerging micro and nano electro mechanical systems (M and NEMs)
Publication TypeJournal Article
Year of Publication2017
AuthorsArutt, CN, Alles, ML, Liao, W, Gong, H, Davidson, JL, Schrimpf, RD, Reed, RA, Weller, RA, Bolotin, K, Nicholl, R, Pham, TToan, Zettl, A, Qingyang, D, Hu, J, Li, M, Alphenaar, BW, Lin, J-T, Shurva, PDeb, McNamara, S, Walsh, KM, Feng, PX-L, Hutin, L, Ernst, T, Homeijer, BD, Polcawich, RG, Proie, RM, Jones, JL, Glaser, ER, Cress, CD, Bassiri-Gharb, N
JournalSemiconductor Science and Technology
Date Published2017/01//
ISBN Number0268-1242
Keywords2D materials, devices, elastic properties, graphene, ionizing-radiation, logic relays, mems, mems accelerometers, microelectromechanical systems, micromachined cantilevers, nems, radiation effects, silicon, silicon carbide (SiC), switches, transducers

The potential of micro and nano electromechanical systems (M and NEMS) has expanded due to advances in materials and fabrication processes. A wide variety of materials are now being pursued and deployed for M and NEMS including silicon carbide (SiC), III-V materials, thinfilm piezoelectric and ferroelectric, electro-optical and 2D atomic crystals such as graphene, hexagonal boron nitride (h-BN), and molybdenum disulfide (MoS2). The miniaturization, functionality and low-power operation offered by these types of devices are attractive for many application areas including physical sciences, medical, space and military uses, where exposure to radiation is a reliability consideration. Understanding the impact of radiation on these materials and devices is necessary for applications in radiation environments.

Short TitleSemicond. Sci. Technol.