|Title||The role of AsH3 partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD - Application to a 200 mm GaAs virtual substrate|
|Publication Type||Journal Article|
|Year of Publication||2015|
|Authors||Kohen, D, Bao, S, Lee, KHong, Lee, KEng Kian, Tan, CSeng, Yoon, SFatt, Fitzgerald, EA|
|Journal||Journal of Crystal Growth|
|Pagination||58 - 65|
We demonstrate the influence of the arsine partial pressure (p(AsH3)) on the quality of a GaAs layer grown on Ge substrate by metal organic chemical vapor deposition. The GaAs quality improves with p (AsH3) used during the 100 nm thick GaAs buffer layer. By growing a GaAs buffer layer at 630 degrees C with p (AsH3) of 5 mbar, we obtain a smooth GaAs layer with a root mean square roughness of 4.7 angstrom. This GaAs layer does not contain anti phase boundaries. With these optimized growth parameters, we fabricate a virtual GaAs substrate on a 200 mm silicon wafer as a first step towards the integration of III-V devices on silicon. (C) 2015 Elsevier B.V. All rights reserved.