The role of AsH3 partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD - Application to a 200 mm GaAs virtual substrate

TitleThe role of AsH3 partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD - Application to a 200 mm GaAs virtual substrate
Publication TypeJournal Article
Year of Publication2015
AuthorsKohen, D, Bao, S, Lee, KHong, Lee, KEng Kian, Tan, CSeng, Yoon, SFatt, Fitzgerald, EA
JournalJournal of Crystal Growth
Volume421
Pagination58 - 65
Date Published2015/07/01/
Abstract

We demonstrate the influence of the arsine partial pressure (p(AsH3)) on the quality of a GaAs layer grown on Ge substrate by metal organic chemical vapor deposition. The GaAs quality improves with p (AsH3) used during the 100 nm thick GaAs buffer layer. By growing a GaAs buffer layer at 630 degrees C with p (AsH3) of 5 mbar, we obtain a smooth GaAs layer with a root mean square roughness of 4.7 angstrom. This GaAs layer does not contain anti phase boundaries. With these optimized growth parameters, we fabricate a virtual GaAs substrate on a 200 mm silicon wafer as a first step towards the integration of III-V devices on silicon. (C) 2015 Elsevier B.V. All rights reserved.