|Title||Polymethyl methacrylate/hydrogen silsesquioxane bilayer resist electron beam lithography process for etching 25nm wide magnetic wires|
|Publication Type||Journal Article|
|Year of Publication||2014|
|Authors||Currivan, JAnne, Siddiqui, S, Ahn, S, Tryputen, L, Beach, GSD, Baldo, MA, Ross, CA|
|Journal||Journal of Vacuum Science & Technology B|
A method of patterning magnetic metallic thin films is presented using a bilayer polymethyl methacrylate and hydrogen silsesquioxane electron beam lithography resist mask combined with ion beam etching. The bilayer resist process allows for the combination of a high-resolution resist mask with easy postprocess removal of the mask without damage to the magnetic quality of the film. Co60Fe20B20 and Co/Ni multilayer films were patterned with electron beam lithography at 10-125 keV down to 25 nm wide features with 2 nm average root-mean square edge roughness. Both the in-plane and out-of-plane magnetic anisotropies of the respective film types were preserved after patterning. (C) 2014 American Vacuum Society.