|Title||Point defect states in Sb-doped germanium|
|Publication Type||Journal Article|
|Year of Publication||2015|
|Authors||Patel, NS, Monmeyran, C, Agarwal, AM, Kimerling, LC|
|Journal||Journal of Applied Physics|
Defect states in n-type Sb-doped germanium were investigated by deep-level transient spectroscopy. Cobalt-60 gamma rays were used to generate isolated vacancies and interstitials which diffuse and react with impurities in the material to form four defect states (E-37, E-30, E-22, and E-21) in the upper half of the bandgap. Irradiations at 77 K and 300 K as well as isothermal anneals were performed to characterize the relationships between the four observable defects. E-37 is assigned to the Sb donor-vacancy associate (E-center) and is the only vacancy containing defect giving an estimate of 2 x 10(11) cm(-3) Mrad(-1) for the uncorrelated vacancy-interstitial pair introduction rate. The remaining three defect states are interstitial associates and transform among one another. Conversion ratios between E-22, E-21, and E-30 indicate that E-22 likely contains two interstitials. (C) 2015 AIP Publishing LLC.