Piezoelectricity in two-dimensional group-III monochalcogenides

TitlePiezoelectricity in two-dimensional group-III monochalcogenides
Publication TypeJournal Article
Year of Publication2015
AuthorsLi, W, Li, J
JournalNano Research
Volume8
Issue12
Pagination3796 - 3802
Date Published2015/12//
Abstract

It is found that several layer-phase group-III monochalcogenides, including GaS, GaSe, and InSe, are piezoelectric in their monolayer form. First-principles calculations reveal that the piezoelectric coefficients of monolayer GaS, GaSe, and InSe (2.06, 2.30, and 1.46 pm center dot V-(TM) 1) are of the same order of magnitude as previously discovered two-dimensional (2D) piezoelectric materials such as boron nitride (BN) and MoS2 monolayers. This study therefore indicates that a strong piezoelectric response can be obtained in a wide range of two-dimensional materials with broken inversion symmetry. The co-existence of piezoelectricity and superior photo-sensitivity in these monochalcogenide monolayer semiconductors means they have the potential to allow for the integration of electromechanical and optical sensors on the same material platform.