Performance of 1eV GaNAsSb-based photovoltaic cell on Si substrate at different growth temperatures

TitlePerformance of 1eV GaNAsSb-based photovoltaic cell on Si substrate at different growth temperatures
Publication TypeJournal Article
Year of Publication2017
AuthorsYurong, NLeong, Tan, KHua, Loke, WKai, Wicaksono, S, Li, D, Yoon, SFatt, Sharma, P, Milakovich, T, Bulsara, MT, Fitzgerald, EA
JournalProgress in Photovoltaics
Volume25
Issue4
Pagination327 - 332
Date Published2017/04//
ISBN Number1062-7995
Keywords1eV, efficiency, gainnassb, GaNAsSb, growth temperature, layers, molecular-beam epitaxy, nitrogen, nitrogen-related defects, photovoltaic, silicon, solar cell, solar-cells
Abstract

We report the performance of a 1eV GaNAsSb photovoltaic cell grown on Si/Si-Ge substrate using molecular beam epitaxy at different growth temperatures. The sample grown at 420 degrees C showed the highest energy conversion efficiency, with a short circuit current of 18mA/cm(2) and open circuit voltage of 0.53V. With different growth temperature, performance of the cells degrade, which is attributed to the increase of nitrogen-related defects and the decrease of antimony incorporation at higher growth temperature. Copyright (c) 2017 John Wiley & Sons, Ltd.

Short TitleProg. Photovoltaics