|Title||A multi-state memory device based on the unidirectional spin Hall magnetoresistance|
|Publication Type||Journal Article|
|Year of Publication||2017|
|Authors||Avci, COnur, Mann, M, Tan, AJun, Gambardella, P, Beach, GSD|
|Journal||Applied Physics Letters|
|Keywords||domain-walls, exchange, field, orbit torque|
We report on a memory device concept based on the recently discovered unidirectional spin Hall magnetoresistance (USMR), which can store multiple bits of information in a single ferromagnetic heterostructure. We show that the USMR with possible contribution of Joule heating-driven magnetothermal effects in ferromagnet/normal metal/ferromagnet (FM/NM/FM) trilayers gives rise to four different 2nd harmonic resistance levels corresponding to four magnetization states (paired right arrows, reversible arrow, reversible arrow, paired left arrows) in which the system can be found. Combined with the possibility of controlling the individual FMs by spin-orbit torques, we propose that it is possible to build an all-electrical lateral two-terminal multi-bit-per-cell memory device. Published by AIP Publishing.
|Short Title||Appl. Phys. Lett.|