|Title||Metamorphic transistors: Building blocks for hetero-integrated circuits|
|Publication Type||Journal Article|
|Year of Publication||2016|
|Authors||Lee, KE, Fitzgerald, EA|
|Pagination||210 - 217|
|Keywords||gaas, gan, hemts, in0.53ga0.47as moshemts, inp, mhemts, mocvd, performance, si, substrate|
Metamorphic epitaxy offers the possibility of growing devices on wafers composed of different materials that might be larger than the native bulk substrates for a potential cost-reduction of III-V components; this is especially important when native substrates with desired lattice constants are not available. This article reviews the concepts of metamorphic epitaxy of III-V compound semiconductor materials and examines how they have been applied to the development of advanced transistor devices. These metamorphic devices are expected to be a key enabler of future heterogeneous integrated circuits in which Si and III-V devices are monolithically integrated on a wafer scale using complementary metal oxide semiconductor-like process flows.
|Short Title||MRS Bull.|