MEASUREMENT OF DEFECT PROFILES IN REACTIVE ION ETCHED SILICON

TitleMEASUREMENT OF DEFECT PROFILES IN REACTIVE ION ETCHED SILICON
Publication TypeJournal Article
Year of Publication1992
AuthorsBENTON, JL, WEIR, BE, EAGLESHAM, DJ, GOTTSCHO, RA, Michel, J, Kimerling, LC
JournalJournal of Vacuum Science & Technology B
Volume10
Issue1
Pagination540 - 543
Date Published1992/02//JAN
ISBN Number1071-1023