Loss reduction of silicon-on-insulator waveguides for deep mid-infrared applications

TitleLoss reduction of silicon-on-insulator waveguides for deep mid-infrared applications
Publication TypeJournal Article
Year of Publication2017
AuthorsHe, L, Guo, Y, Han, Z, Wada, K, Kimerling, LC, Michel, J, Agarwal, AM, Li, G, Zhang, L
JournalOptics Letters
Volume42
Issue17
Pagination3454 - 3457
Date Published2017/09/01/
ISBN Number0146-9592
Keywordsphotonics, region, ring-resonator, supercontinuum generation
Abstract

We report that propagation loss of optical waveguides based on a silicon-on-insulator (SOI) material platform can be greatly reduced. Our simulations show that the loss, including SiO2 absorption and substrate leakage, but no scattering loss, is 0.024 and 0.53 dB/cm in the deep mid-infrared at 4.8 and 7.1 mu m wavelengths, where the material absorption in SiO2 is 100 and 1000 dB/cm, respectively. The loss becomes negligible, compared to scattering loss in Si waveguides. This is enabled by using the TE10 mode in a pedestal waveguide. We also show that the TE10 mode can be excited in the proposed waveguide by the fundamental mode with a coupling efficiency of >94%. Low propagation loss, high coupling efficiency, and fabrication-friendly design would make it promising for practical use of SOI devices in the deep mid-infrared. (C) 2017 Optical Society of America

Short TitleOpt. Lett.