Influence of the carrier gas composition on morphology, dislocations, and microscopic luminescence properties of selectively grown GaN by hydride vapor phase epitaxy

TitleInfluence of the carrier gas composition on morphology, dislocations, and microscopic luminescence properties of selectively grown GaN by hydride vapor phase epitaxy
Publication TypeJournal Article
Year of Publication2002
AuthorsWagner, V, Parillaud, O, Buhlmann, HJ, Ilegems, M, Gradecak, S, Stadelmann, P, Riemann, T, Christen, J
JournalJournal of Applied Physics
Volume92
Issue3
Pagination1307 - 1316
Date Published2002/08/01/
ISBN Number0021-8979