|Title||In0.30Ga0.70As QW MOSFETs with Peak Mobility exceeding 3000 cm(2)/V.s Fabricated on Si Substrates|
|Publication Type||Journal Article|
|Year of Publication||2016|
|Authors||Yadav, S, ,, Kohen, D, Nguyen, XSang, Lee, KHong, Gong, X, Antoniadis, D, Fitzgerald, EA, Yeo, YChia|
|Journal||2016 Ieee Silicon Nanoelectronics Workshop (snw)|
|Pagination||126 - 127|
We report the fabrication of self-aligned In0.30Ga0.70As quantum well (QW) MOSFETs on Si substrates. The layer structures for device fabrication were grown using MOCVD on a 200 mm Si substrate with threading dislocation density lower than 2x 10(7) cm(-2).Si-CMOS compatible process modules were used. The QW MOSFET achieved a drive current exceeding 200 mu A/mu m at V-GS-V-TH= 1.75 V and V-DS = 1.2 V at channel length of 0.9 mu m. Furthermore, peak device mobility of 3011 cm(2)/V.s was obtained.