In0.30Ga0.70As QW MOSFETs with Peak Mobility exceeding 3000 cm(2)/V.s Fabricated on Si Substrates

TitleIn0.30Ga0.70As QW MOSFETs with Peak Mobility exceeding 3000 cm(2)/V.s Fabricated on Si Substrates
Publication TypeJournal Article
Year of Publication2016
AuthorsYadav, S, ,, Kohen, D, Nguyen, XSang, Lee, KHong, Gong, X, Antoniadis, D, Fitzgerald, EA, Yeo, YChia
Journal2016 Ieee Silicon Nanoelectronics Workshop (snw)
Pagination126 - 127
Date Published2016///
Abstract

We report the fabrication of self-aligned In0.30Ga0.70As quantum well (QW) MOSFETs on Si substrates. The layer structures for device fabrication were grown using MOCVD on a 200 mm Si substrate with threading dislocation density lower than 2x 10(7) cm(-2).Si-CMOS compatible process modules were used. The QW MOSFET achieved a drive current exceeding 200 mu A/mu m at V-GS-V-TH= 1.75 V and V-DS = 1.2 V at channel length of 0.9 mu m. Furthermore, peak device mobility of 3011 cm(2)/V.s was obtained.