Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation

TitleImproved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation
Publication TypeJournal Article
Year of Publication2017
AuthorsSasangka, WA, Syaranamual, GJ, ,, ,, Gan, CL, Thompson, CV
JournalMicroelectronics Reliability
Date Published07/2017