Improved germanium n(+)/p junction diodes formed by coimplantation of antimony and phosphorus

TitleImproved germanium n(+)/p junction diodes formed by coimplantation of antimony and phosphorus
Publication TypeJournal Article
Year of Publication2011
AuthorsKim, J, Bedell, SW, Sadana, DK
JournalApplied Physics Letters
Volume98
Issue8
Pagination082112
Date Published2011/02/21/
Abstract

Obtaining heavily-doped n-type germanium (Ge) is difficult since n-type dopant activation in Ge is limited to less than 5 x 10(19) cm(-3) which is far below the solid solubility limit of phosphorus (P) in Ge. Such poor activation has limited the rectifying properties of n(+)/p Ge diodes. This work is aimed at understanding the challenge of forming highly rectifying n(+)/p diode as well as enhancing rectification of n(+)/p diode by using antimony (Sb) and P coimplantation process. Enhanced n(+) doping of greater than 10(20) cm(-3) in Ge obtained by Sb/P codoping results in enhanced rectification in Ge n(+)/p junction diode. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3558715]