|Title||Impact of nucleation conditions on diameter modulation of GaAs nanowires|
|Publication Type||Journal Article|
|Year of Publication||2015|
|Authors||Crawford, SC, Ermez, S, Haberfehlner, G, Jones, EJ, Gradecak, S|
Diameter-modulated nanowires can be used to impart unique properties to nanowire-based devices. Here, diameter modulation along Au-seeded GaAs nanowires was achieved by varying the flux of the III and V precursors during growth. Furthermore, three different types of  B-oriented nanowires were observed to display distinct differences in diameter modulation, growth rate, and cross-sectional shape. These differences are attributed to the presence of multiple distinct Au-Ga seed particle phases at the growth temperature of 420 degrees C. We show that the diameter modulation behavior can be modified by the growth conditions during nanowire nucleation, including temperature, V/III ratio, substrate orientation, and seed particle size. These results demonstrate the general viability of flow-controlled diameter modulation for compound semiconductors and highlight both opportunities and challenges that can arise from using compound-forming alloys to seed nanowire growth.