High-Electron-Mobility Transistors Based on InAlN/GaN Nanoribbons

TitleHigh-Electron-Mobility Transistors Based on InAlN/GaN Nanoribbons
Publication TypeJournal Article
Year of Publication2011
AuthorsAzize, M, Hsu, AL, Saadat, OI, Smith, M, Gao, X, Guo, S, Gradecak, S, Palacios, T
JournalIeee Electron Device Letters
Volume32
Issue12
Pagination1680 - 1682
Date Published2011/12//
ISBN Number0741-3106