Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

TitleHeteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer
Publication TypeJournal Article
Year of Publication2016
AuthorsKohen, D, Nguyen, XSang, Yadav, S, Kumar, A, Made, RI, Heidelberger, C, Gong, X, Lee, KHong, Lee, KEng Kian, Yeo, YChia, Yoon, SFatt, Fitzgerald, EA
JournalAip Advances
Volume6
Issue8
Pagination085106
Date Published2016/08//
ISBN Number2158-3226
Keywordsgaas, ge, hemts, inp, integration, mocvd, si
Abstract

We report on the growth of an In0.30Ga0.70As channel high-electron mobility transistor (HEMT) on a 200 mm silicon wafer by metal organic vapor phase epitaxy. By using a 3 mu m thick buffer comprising a Ge layer, a GaAs layer and an In-AlAs compositionally graded strain relaxing buffer, we achieve threading dislocation density of (1.0 mu 0.3) x 10(7) cm(-2) with a surface roughness of 10 nm RMS. No phase separation was observed during the InAlAs compositionally graded buffer layer growth. 1.4 mu m long channel length transistors are fabricated from the wafer with IDS of 70 mu A/mu m and g(m) of above 60 mu S/mu m, demonstrating the high quality of the grown materials. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

Short TitleAIP Adv.