Gamma radiation effects in amorphous silicon and silicon nitride photonic devices

TitleGamma radiation effects in amorphous silicon and silicon nitride photonic devices
Publication TypeJournal Article
Year of Publication2017
AuthorsDu, Q, Huang, Y, Ogbuu, O, Zhang, W, Li, J, Singh, V, Agarwal, AM, Hu, J
JournalOptics Letters
Volume42
Issue3
Pagination587 - 590
Date Published2017/02/01/
ISBN Number0146-9592
Keywordscrystallization, damage, resonators, wave-guides
Abstract

Understanding radiation damage is of significant importance for devices operating in radiation-harsh environments. In this Letter, we present a systematic study on gamma radiation effects in amorphous silicon and silicon nitride guided wave devices. It is found that gamma radiation increases the waveguide modal effective indices by as much as 4 x 10(-3) in amorphous silicon and 5 x 10(-4) in silicon nitride at 10 Mrad dose. This Letter further reveals that surface oxidation and radiation-induced densification account for the observed index change. (C) 2017 Optical Society of America

Short TitleOpt. Lett.